Patents by Inventor Pierre Kumurdjian

Pierre Kumurdjian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5169713
    Abstract: Radiation absorbent coating and process for its production.The radiation absorbent coating comprises a binder and chips able to absorb ultrahigh frequency electromagnetic radiation. The chips comprise a series of layers alternately constituted by electrically insulating layers (16, 20) and layers (14, 18) made from a stack of films of alternating amorphous magnetic films (50) and electrically insulating films (60) each from 2-5 nanometers thick.
    Type: Grant
    Filed: February 13, 1991
    Date of Patent: December 8, 1992
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Pierre Kumurdjian
  • Patent number: 5148172
    Abstract: Absorbing coating, its process of manufacture and covering obtained with the aid of this coating.The coating is characterized in that it comprises a binder (34) and a load consisting of chips (C) consisting of a stack of thin layers, this stack being capable of absorbing an electromagnetic radiation.Application in microwaves, infrared etc.
    Type: Grant
    Filed: January 13, 1989
    Date of Patent: September 15, 1992
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Pierre Kumurdjian
  • Patent number: 4366614
    Abstract: Method for the production of devices having a memory action with amorphous semiconductors, comprising in sequence a substrate on which is deposited a lower electrode, an active area produced by means of an amorphous semiconductor compound and an upper electrode, comprising producing the active area in the form of a central layer constituting an active layer formed from a first amorphous semiconductor compound and at least one buffer layer placed on one of the upper and lower faces of the active layer, said buffer layers being formed from a second amorphous semiconductor compound in the form of a quaternary compound selected from the group containing germanium, tellurium, arsenic and sulphur and producing at least one of the electrodes in such a way that it constitutes the actual electrode and with a thin layer turned towards the active area constituting a barrier, wherein the actual electrodes are made from a metal chosen from the group including tungsten and tantalum which can diffuse into the buffer layers
    Type: Grant
    Filed: March 17, 1981
    Date of Patent: January 4, 1983
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Pierre Kumurdjian
  • Patent number: 4167806
    Abstract: An active zone between a lower electrode deposited on a substrate and an upper electrode constitutes a portion of an amorphous semiconducting layer and is defined either by the dimensions of the upper electrode or by a window formed in an insulating layer. The method of fabrication consists in forming the two electrodes and the two active and insulating layers, the active layer and insulating layer being fabricated from amorphous compounds which are constituted either wholly or in part by the same elements.
    Type: Grant
    Filed: September 22, 1977
    Date of Patent: September 18, 1979
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Pierre Kumurdjian