Patents by Inventor Pierre Müller

Pierre Müller has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Composition, its use and a process for selectively etching silicon-germanium material
    Patent number: 11970647
    Abstract: Described herein is a composition for selectively etching a layer including a silicon germanium alloy (SiGe) in the presence of a silicon-containing layer, particularly a layer comprising a-Si, SiOx, SiON, SiN, or a combination thereof, the composition including: (a) an oxidizing agent, (b) an acid selected from an inorganic acid and an organic acid, (c) an etchant including a source of fluoride ions, (d) a polyvinylpyrrolidone (PVP), and (e) water.
    Type: Grant
    Filed: June 19, 2020
    Date of Patent: April 30, 2024
    Assignee: BASF SE
    Inventors: Francisco Javier Lopez Villanueva, Yeni Burk, Daniel Loeffler, Jan Ole Mueller, Marcel Brill, Patrick Wilke, Jean-Pierre Berkan Lindner, Volodymyr Boyko
  • Method for making semi-conductor nanocrystals oriented along a predefined direction
    Patent number: 8697548
    Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: April 15, 2014
    Assignees: Commissariat a l'energie atomique et aux energies alternatives, Centre National de la Recherche Scientifique
    Inventors: Lukasz Borowik, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frédéric Leroy, Denis Mariolle, Pierre Müller
  • METHOD FOR MAKING SEMI-CONDUCTOR NANOCRYSTALS
    Publication number: 20120282758
    Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 8, 2012
    Applicants: Centre National De La Recherche Scientifique, Commissariat a L'Energie Atomique Et Aux Ene Alt
    Inventors: Lukasz BOROWIK, Jean-Charles Barbe, Ezra Bussmann, Fabien Cheynis, Frédéric Leroy, Denis Mariolle, Pierre Müller
  • METHOD FOR MAKING SEMI-CONDUCTOR NANOCRYSTALS ORIENTED ALONG A PREDEFINED DIRECTION
    Publication number: 20120282759
    Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.
    Type: Application
    Filed: May 4, 2012
    Publication date: November 8, 2012
    Applicants: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT
    Inventors: Lukasz BOROWIK, Jean-Charles BARBE, Ezra BUSSMANN, Fabien CHEYNIS, Frédéric LEROY, Denis MARIOLLE, Pierre Müller
  • Method for manufacturing a strip-shaped composite body
    Patent number: 4311542
    Abstract: The perforated web and a carrier web are passed through a heated zone while moving through a curved path in which the perforated web is tensioned. Upon heating of the perforated web, the thermoplastic material of the web shrinks so that a net structure with opened perforations is formed. Inward shrinking of the peripheral zones of the perforated web is prevented by the tensioning of the perforated web in the curved path.
    Type: Grant
    Filed: February 4, 1980
    Date of Patent: January 19, 1982
    Assignee: Breveteam S.A.
    Inventors: Jean-Pierre Mueller, Marius Raemy