Abstract: A semiconductor wafer (1a, 1b) including a plurality of chips (2) and a separation zone (3) spacing the semiconductor chips (2) from each other in this wafer (1a, 1b), such a separation zone (3) extending from a front face (4a) to an opposite backside face (4b) of this wafer (1a, 1b), this separation zone (3) includes a scribe line (6) configured to be diced using plasma etching and an inlet area (13) of this scribe line (6), the inlet (13) being delimitated by free ends of plasma etch-resistant material layers (9) extending each from a peripheral wall (20) of a functional part (18) of a chip (2) into the scribe line (6) by overlapping a top of a seal ring (7) of this chip (2).

Abstract: An RFID assembly and an assembly method thereof are provided. The assembly method for an RFID assembly comprises a step of providing at least one integrated circuit which includes at least one IC contact and at least one dielectric layer, and a deposition of at least one electrical contact and of at least one re-passivation layer. The at least one electrical contact is deposited on at least one first portion and the at least one re-passivation layer is deposited on at least one second portion, which is distinct of the at least one first portion.

Abstract: A device includes a display screen and an image sensor. A first electromagnetic shielding layer permeable to light is arranged between active portions of the display screen and active portions of the image sensor.

Abstract: A device includes an at least partially transparent screen and, between the screen and an optical sensor, a layer having at least one optically clear portion with a refraction index smaller by at least 0.1 than the refraction index of an optical material of the optical sensor.

Abstract: A tamper-evident RFID Tag (100) and a method for manufacturing it. The method (500) may provide (510) at least one protection layer (151) before being cured (520) such as to turn the at least one protection layer (151) into at least one degradable layer (155), and to prevent an assembly or a reassembly of the tamper-evident RFID Tag (100) after any attempt of harvesting of the tamper-evident RFID Tag (100).

Abstract: A device having a stack includes an image sensor in MOS technology adapted to detect a radiation; a first lens array; a structure formed of at least a first matrix of openings delimited by walls opaque to the radiation; and a second lens array.

Abstract: An optical filter for an image sensor includes first opaque zones. Each of the first opaque zones occupies a surface area equal to the surface area of at least one first lens in this same first zone.

Abstract: An image sensor includes first pixels and second pixels. The second pixels of the image sensor are distinct from the first pixels of the image sensor.

Abstract: The present disclosure relates to a NFC communication system, to a method of establishing communication between a wireless communication device and a passive NFC device and to a passive NFC device. The passive NFC device includes an NFC controller, an NFC transceiver coupled with the NFC controller, and at least one persistent flag coupled with the NFC controller, the persistent flag being switchable between an activated state and a deactivated state. The NFC controller is configured to perform a logical operation being divisible into a sequence of at least a first subtask and a second subtask and the NFC controller is configured to ascertain the status of the persistent flag. The NFC controller is further configured to selectively perform at least one of the first subtask and the second subtask on the basis of the status of the persistent flag.

Abstract: A device includes an at least partially transparent screen and, between the screen and an optical sensor, a layer having at least one optically clear portion with a refraction index smaller by at least 0.1 than the refraction index of an optical material of the optical sensor.

Abstract: A device includes an at least partially transparent screen, an optical sensor and, between the sensor and the screen, a non-peripheral portion. The non-peripheral portion includes one or a plurality of rigid elements.

Abstract: The present disclosure relates to a NFC communication system, to a method of establishing communication between a wireless communication device and a passive NFC device and to a passive NFC device. The passive NFC device includes an NFC controller, an NFC transceiver coupled with the NFC controller, and at least one persistent flag coupled with the NFC controller, the persistent flag being switchable between an activated state and a deactivated state. The NFC controller is configured to perform a logical operation being divisible into a sequence of at least a first subtask and a second subtask and the NFC controller is configured to ascertain the status of the persistent flag. The NFC controller is further configured to selectively perform at least one of the first subtask and the second subtask on the basis of the status of the persistent flag.

Abstract: An optoelectronic device includes a substrate, an array of optoelectronic components covering the substrate, first conductive tracks coupled to the optoelectronic components, an adhesive layer covering a portion of the array, and a coating in contact with the adhesive layer, the coating including a periphery. The device further includes a second track reflecting a radiation at a wavelength in the range 335 nm to 10.6 ?m and extending aligned with the periphery along a given direction between the first conductive tracks and the coating.

Abstract: A device includes a display screen and an image sensor. A first electromagnetic shielding layer permeable to light is arranged between active portions of the display screen and active portions of the image sensor.

Abstract: A plurality of frames of data are transmitted over a serial interface in a manner that limits interference on the interface. This involves generating a pseudo-random number and asserting a read control signal at a moment in time, wherein a timing of the moment in time is influenced by the pseudo-random number. In response to the asserted read control signal, a frame of data is read from a data buffer. The read frame of data is then transmitted over the serial interface. A number of alternative embodiments are possible, such as embodiments in which buffer read operations are triggered based on the buffer fill level, and other embodiments in which buffer read operations are triggered by a timer. By using the pseudo-random number to influence the buffer read operations, timing coherency between the reading of frames is made low, thereby limiting interference.

Abstract: A plurality of frames of data are transmitted over a serial interface in a manner that limits interference on the interface. This involves generating a pseudo-random number and asserting a read control signal at a moment in time, wherein a timing of the moment in time is influenced by the pseudo-random number. In response to the asserted read control signal, a frame of data is read from a data buffer. The read frame of data is then transmitted over the serial interface. A number of alternative embodiments are possible, such as embodiments in which buffer read operations are triggered based on the buffer fill level, and other embodiments in which buffer read operations are triggered by a timer. By using the pseudo-random number to influence the buffer read operations, timing coherency between the reading of frames is made low, thereby limiting interference.

Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.

Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.

Abstract: A method for making a semi-conductor nanocrystals, including at least the steps of: making a stack of at least one uniaxially stressed semi-conductor thin layer and a dielectric layer, annealing the semi-conductor thin layer such that a dewetting of the semi-conductor forms, on the dielectric layer, elongated shaped semi-conductor nanocrystals oriented perpendicularly to the stress axis.

Abstract: A method for making semi-conductor nanocrystals, including at least the steps of: forming solid carbon chemical species on a semi-conductor thin layer provided on at least one dielectric layer, the dimensions and the density of the carbon chemical species formed on the semi-conductor thin layer being a function of the desired dimensions and density of the semi-conductor nanocrystals; annealing the semi-conductor thin layer, performing a dewetting of the semi-conductor and forming, on the dielectric layer, the semi-conductor nanocrystals.