Patents by Inventor Pierre Petroff

Pierre Petroff has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070085100
    Abstract: A high efficiency light emitting diode (LED) comprised of a substrate, a buffer layer grown on the substrate (if such a layer is needed), a first active region comprising primary emitting species (PES) that are electrically-injected, a second active region comprising secondary emitting species (SES) that are optically-pumped by the light emitted from the PES, and photonic crystals, wherein the photonic crystals act as diffraction gratings to provide high light extraction efficiency, to provide efficient excitation of the SES, and/or to modulate the far-field emission pattern.
    Type: Application
    Filed: October 14, 2005
    Publication date: April 19, 2007
    Inventors: Frederic Diana, Aurelien David, Pierre Petroff, Claude Weisbuch
  • Publication number: 20060154466
    Abstract: A method and resultant device, in which metal nanoparticles are self-assembled into two-dimensional lattices. A periodic hole pattern (wells) is fabricated on a photoresist substrate, the wells having an aspect ratio of less than 0.37. The nanoparticles are synthesized within inverse micelles of a polymer, preferably a block copolymer, and are self-assembled onto the photoresist nanopatterns. The nanoparticles are selectively positioned in the holes due to the capillary forces related to the pattern geometry, with a controllable number of particles per lattice point.
    Type: Application
    Filed: November 14, 2005
    Publication date: July 13, 2006
    Inventors: Seung-Heon Lee, Frederic Diana, Antonio Badolato, Pierre Petroff, Edward Kramer
  • Publication number: 20050250276
    Abstract: Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar substrate. The dimensions and separation of the wires are determined by the thicknesses of alternating layers of different materials that are in the form of a superlattice. Wires are created by evaporating the desired material onto the superlattice that has been selectively etched to provide height contrast between layers. The wires thus formed upon one set of superlattice layers are then transferred to a substrate.
    Type: Application
    Filed: July 28, 2003
    Publication date: November 10, 2005
    Inventors: James Heath, Pierre Petroff, Nicholas Melosh
  • Publication number: 20050158988
    Abstract: A method and resultant device, in which metal nanoparticles are self-assembled into two-dimensional lattices. A periodic hole pattern (wells) is fabricated on a photoresist substrate, the wells having an aspect ratio of less than 0.37. The nanoparticles are synthesized within inverse micelles of a polymer, preferably a block copolymer, and are self-assembled onto the photoresist nanopatterns. The nanoparticles are selectively positioned in the holes due to the capillary forces related to the pattern geometry, with a controllable number of particles per lattice point.
    Type: Application
    Filed: January 15, 2004
    Publication date: July 21, 2005
    Inventors: Seung-Heon Lee, Frederic Diana, Antonio Badolato, Pierre Petroff, Edward Kramer
  • Patent number: 5614435
    Abstract: A process for production of self-assembled quantum dots is described which does not entail any processing steps before or after growth of the quantum dots. The process uses in situ formation of three dimensional islands which occurs during epitaxy of material with a different lattice parameter than the substrate. Further deposition of the substrate material then produces single or multiple buried two dimensional layers of randomly distributed or selectively positioned and substantially uniform sized quantum dots. These layers are free of defects and interface states. The lateral dot diameters vary between 140 to 300 Angstroms by appropriate choice of deposition parameters.
    Type: Grant
    Filed: October 27, 1994
    Date of Patent: March 25, 1997
    Assignee: The Regents of the University of California
    Inventors: Pierre Petroff, Devin Leonard, Mohan Krishnamurthy