Patents by Inventor Pierre Ranson

Pierre Ranson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Deep anisotropic silicon etch method
    Patent number: 8012365
    Abstract: A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from ?40° C. to ?120° C., comprising alternated and repeated steps of: etching with injection of a fluorinated gas, into the plasma reactor, and passivation with injection of silicon tetrafluoride, SiF4, and of oxygen into the plasma reactor, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.
    Type: Grant
    Filed: April 3, 2008
    Date of Patent: September 6, 2011
    Assignee: STMicroelectronics, SA
    Inventors: Remi Dussart, Philippe Lefaucheux, Xavier Mellhaoui, Lawrence John Overzet, Pierre Ranson, Thomas Tillocher, Mohamed Boufnichel
  • Deep anisotropic silicon etch method
    Publication number: 20080293250
    Abstract: A method of anisotropic plasma etching of a silicon wafer, maintained at a temperature from ?40° C. to ?120° C., comprising alternated and repeated steps of: etching with injection of a fluorinated gas, into the plasma reactor, and passivation with injection of silicon tetrafluoride, SiF4, and of oxygen into the plasma reactor, the flow rate of the gases in the plasma reactor being on the order of from 10% to 25% of the gas flow rate during the etch step.
    Type: Application
    Filed: April 3, 2008
    Publication date: November 27, 2008
    Inventors: Remi Dussart, Philippe Lefaucheux, Xavier Mellihaoui, Lawrence John Overzet, Pierre Ranson, Thomas Tillocher, Mohamed Boufnichel