Abstract: A semiconductor or integrated circuit block including a sense node and a converter circuit, in which the sense node develops a low frequency electrical parameter that is constant or varies at a frequency below a predetermined frequency level, and in which the converter circuit converts the low frequency electrical parameter into an alternating electrical parameter having a frequency at or above the predetermined frequency level sufficient to modulate a laser beam focused within a laser probe area of the converter circuit. The converter may include a ring oscillator, a switch circuit controlled by a clock enable signal, a capacitor having a charge rate based on the low frequency electrical parameter, etc. The laser probe area has a frequency level based on a level of the low frequency electrical parameter to modulate the reflected laser beam for measurement of the electrical parameter by a laser voltage probe test system.

Abstract: A semiconductor or integrated circuit block including a sense node and a converter circuit, in which the sense node develops a low frequency electrical parameter that is constant or varies at a frequency below a predetermined frequency level, and in which the converter circuit converts the low frequency electrical parameter into an alternating electrical parameter having a frequency at or above the predetermined frequency level sufficient to modulate a laser beam focused within a laser probe area of the converter circuit. The converter may include a ring oscillator, a switch circuit controlled by a clock enable signal, a capacitor having a charge rate based on the low frequency electrical parameter, etc. The laser probe area has a frequency level based on a level of the low frequency electrical parameter to modulate the reflected laser beam for measurement of the electrical parameter by a laser voltage probe test system.

Abstract: An output driver circuit is provided. In accordance with various example embodiments, an output driver circuit includes a high-side driver circuit having transistors coupled in anti-series between a power source and an output node, and a low-side driver circuit having transistors coupled in anti-series between the output node and ground. For each transistor, a diode is connected between the source and drain of the transistor, with the diodes of the respective high-side and low-side circuits being arranged to prevent/mitigate the flow of current in opposite directions.

Abstract: Various exemplary aspects are directed to apparatuses and methods involving switches communicatively-coupled on a bus where one or more of the switches operate to block signals from passing through the switch in a first mode, and to pass signals through the switch in a second mode. A logic circuit is responsive to addressing information received in the first mode, by storing and configuring the apparatus with the address information. The logic circuit ignores address information received in the second mode (e.g., does not reconfigure the apparatus with address information received in the second mode).

Abstract: An output driver circuit is provided. In accordance with various example embodiments, an output driver circuit includes a high-side driver circuit having transistors coupled in anti-series between a power source and an output node, and a low-side driver circuit having transistors coupled in anti-series between the output node and ground. For each transistor, a diode is connected between the source and drain of the transistor, with the diodes of the respective high-side and low-side circuits being arranged to prevent/mitigate the flow of current in opposite directions.

Abstract: An output driver circuit is provided. In accordance with various example embodiments, an output driver circuit includes a high-side driver circuit having transistors coupled in anti-series between a power source and an output node, and a low-side driver circuit having transistors coupled in anti-series between the output node and ground. For each transistor, a diode is connected between the source and drain of the transistor, with the diodes of the respective high-side and low-side circuits being arranged to prevent/mitigate the flow of current in opposite directions.