Abstract: Provided is a white organic light emitting device including an anode, a cathode and an organic layer disposed therebetween, the organic layer having a structure wherein an arrangement of a green emissive layer and a blue emissive layer is formed on both surfaces of a red emissive layer such that the resultant structure is symmetrical around the red emissive layer, and a spacer layer is disposed between opposing surfaces of the blue emissive layer and the green emissive layer, where the white organic light emitting device including this structure exhibits a constant luminescence spectra irrespective of any change in current density. A method of forming the white organic light emitting device is also disclosed.

Abstract: A laser television including a plurality of lasers for generating different wavelengths of interferential light; a scanner for displaying color images on a screen composed from the light; and a phase diffuser positioned between the lasers and the scanner for diffusing the light from the lasers according to the light's wavelength. The phase diffuser having a boundary surface, through which the light is outputted to the scanner. The boundary surface is slanted with a predetermined angle to regulate the range of diffraction of the light according to the wavelength.

Abstract: Provided is an organic light emitting device (OLED) having increased optical extraction efficiency. The OLED includes a transparent substrate, an optical path control layer made of an optical transmittance material on the transparent substrate, a transparent electrode, an organic light emitting layer that generated light, and a reflection electrode formed on the organic light emitting layer, which are sequentially stacked. The refractive index And thickness of the optical path control layer are optimized.

Abstract: A field emission device and a field emission display (FED) having dual cathode electrodes. The field emission device includes a substrate; a first cathode electrode formed on the substrate; a cathode insulating layer formed on the first cathode electrode, and having a first cavity that exposes a portion of the first cathode electrode; an electron emission source disposed on the first cathode electrode and being exposed by the first cavity; a second cathode electrode formed on the cathode insulating layer, and including a cathode hole aligned with the first cavity; a gate insulating layer formed on the second cathode electrode, and having a second cavity aligned with the first cavity; and a gate electrode formed on the gate insulating layer, and having a gate hole aligned with the second cavity.

Abstract: A field emission device having a focusing control electrode, and a field emission display (FED) including the same.

Abstract: Provided is a field emission device using carbon nanotubes. The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.

Abstract: The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs.

Abstract: A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate, a gate insulating layer which is formed on the substrate and the cathode layer and has a cavity through which part of the cathode layer is exposed, a field emitter provided on the cathode layer exposed on the bottom of the cavity, a first gate layer which is formed in the gate insulating layer and in which a first gate hole having a diameter greater than that of the cavity is formed not to be exposed to an inner surface of the cavity, and a second gate layer which is formed on the gate insulating layer and in which a second gate hole is formed in a portion that corresponds to the cavity.

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs.

Abstract: A field emission device for displaying images with good quality is provided. The field emission device includes an anode plate, an anode electrode and a phosphor layer are formed inside of the anode plate, a cathode plate, a plurality of electron emission sources for emitting electrons which correspond to the phosphor layer and a gate electrode having gate holes through which the electrons pass are formed inside of the cathode plate, a mesh grid which is provided between the cathode plate and the anode plate and in which a plurality of electron-controlling holes are formed in a region corresponding to the gate holes, a spacer which supports the mesh grid between the anode plate and the mesh grid, and insulating layers which are formed on both sides of the mesh grid and have windows through which the plurality of electron-controlling holes are exposed and which correspond to a region where the plurality of electron-controlling holes are formed.

Abstract: A laser television including a plurality of lasers for generating different wavelengths of interferential light; a scanner for displaying color images on a screen composed from the light; and a phase diffuser positioned between the lasers and the scanner for diffusing the light from the lasers according to the light's wavelength. The phase diffuser having a boundary surface, through which the light is outputted to the scanner. The boundary surface is slanted with a predetermined angle to regulate the range of diffraction of the light according to the wavelength.

Abstract: A diffraction grating including a substrate, and a grating member formed on the substrate, the grating member having a stepped structure including steps, the number of which corresponds to an odd number greater than or equal to three to provide an odd phase structure. The heights of the steps of the grating member are determined such that the light beams diffracted by their corresponding steps substantially have a phase difference of ? with reference to a diffracted light beam of a reference wavelength.

Abstract: A field emission device and a field emission display (FED) having dual cathode electrodes. The field emission device includes a substrate; a first cathode electrode formed on the substrate; a cathode insulating layer formed on the first cathode electrode, and having a first cavity that exposes a portion of the first cathode electrode; an electron emission source disposed on the first cathode electrode and being exposed by the first cavity; a second cathode electrode formed on the cathode insulating layer, and including a cathode hole aligned with the first cavity; a gate insulating layer formed on the second cathode electrode, and having a second cavity aligned with the first cavity; and a gate electrode formed on the gate insulating layer, and having a gate hole aligned with the second cavity.

Abstract: A field emission device having a focusing control electrode, and a field emission display (FED) including the same.

Abstract: A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs.

Abstract: A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate, a gate insulating layer which is formed on the substrate and the cathode layer and has a cavity through which part of the cathode layer is exposed, a field emitter provided on the cathode layer exposed on the bottom of the cavity, a first gate layer which is formed in the gate insulating layer and in which a first gate hole having a diameter greater than that of the cavity is formed not to be exposed to an inner surface of the cavity, and a second gate layer which is formed on the gate insulating layer and in which a second gate hole is formed in a portion that corresponds to the cavity.

Abstract: A field emission device for displaying images with good quality is provided. The field emission device includes an anode plate, an anode electrode and a phosphor layer are formed inside of the anode plate, a cathode plate, a plurality of electron emission sources for emitting electrons which correspond to the phosphor layer and a gate electrode having gate holes through which the electrons pass are formed inside of the cathode plate, a mesh grid which is provided between the cathode plate and the anode plate and in which a plurality of electron-controlling holes are formed in a region corresponding to the gate holes, a spacer which supports the mesh grid between the anode plate and the mesh grid, and insulating layers which are formed on both sides of the mesh grid and have windows through which the plurality of electron-controlling holes are exposed and which correspond to a region where the plurality of electron-controlling holes are formed.

Abstract: Provided is a field emission device using carbon nanotubes. The field emission device includes a substrate, a cathode, a gate insulating layer, an electron emitter, and a gate electrode. The cathode is formed on the substrate. The gate insulating layer is formed on the cathode and has a well exposing a portion of the cathode. The electron emitter is formed on the exposed portion of the cathode. The gate electrode is formed on the gate insulating layer and has a gate hole corresponding to the well. The gate electrode further includes a cylindrical electrode part that forms a focusing electric field from the gate hole toward a proceeding path of an electron beam. Accordingly, a focusing electric field can be formed around an electron beam emitted from the electron emitter so as to converge and focus the electron beam passing through the focusing electric field. As a result, color purity, brightness, and durability can be improved.