Patents by Inventor Pin-Hen Lin
Pin-Hen Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11411108Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.Type: GrantFiled: October 23, 2020Date of Patent: August 9, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Fen Chen, Chui-Ya Peng, Ching Yu, Pin-Hen Lin, Yen Chuang, Yuh-Ta Fan
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Publication number: 20210043771Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.Type: ApplicationFiled: October 23, 2020Publication date: February 11, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Fen CHEN, Chui-Ya PENG, Ching YU, Pin-Hen LIN, Yen CHUANG, Yuh-Ta FAN
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Patent number: 10818790Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends substantially along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.Type: GrantFiled: June 7, 2019Date of Patent: October 27, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Fen Chen, Chui-Ya Peng, Ching Yu, Pin-Hen Lin, Yen Chuang, Yuh-Ta Fan
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Publication number: 20190312144Abstract: A semiconductor device includes a gate stack over a semiconductor substrate. A spacer extends substantially along a first sidewall of the gate stack. An epitaxy structure is in the semiconductor substrate. A liner wraps around the epitaxy structure and has an outer surface in contact with the semiconductor substrate and an inner surface facing the epitaxy structure. The outer surface of the liner has a first facet extending upwards and towards the gate stack from a bottom of the first liner and a second facet extending upwards and towards an outer sidewall of the spacer from a top of the first facet to a top of the liner, such that a corner is formed between the first facet and the second facet, and the inner surface of the first liner defines a first curved corner pointing towards the corner formed between the first facet and the second facet.Type: ApplicationFiled: June 7, 2019Publication date: October 10, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Fen CHEN, Chui-Ya PENG, Ching YU, Pin-Hen LIN, Yen CHUANG, Yuh-Ta FAN
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Patent number: 10319857Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.Type: GrantFiled: October 30, 2017Date of Patent: June 11, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Fen Chen, Chui-Ya Peng, Ching Yu, Pin-Hen Lin, Yen Chuang, Yuh-Ta Fan
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Publication number: 20180069120Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.Type: ApplicationFiled: October 30, 2017Publication date: March 8, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Fen CHEN, Chui-Ya PENG, Ching YU, Pin-Hen LIN, Yen CHUANG, Yuh-Ta FAN
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Patent number: 9812570Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.Type: GrantFiled: June 30, 2015Date of Patent: November 7, 2017Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Fen Chen, Chui-Ya Peng, Ching Yu, Pin-Hen Lin, Yen Chuang, Yuh-Ta Fan
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Publication number: 20170005196Abstract: A semiconductor device includes a substrate, a liner, and an epitaxy structure. The substrate has a recess. The liner is disposed in the recess. The liner is denser than the substrate. The epitaxy structure is disposed in the recess. The liner is disposed between the epitaxy structure and the substrate.Type: ApplicationFiled: June 30, 2015Publication date: January 5, 2017Inventors: Chih-Fen CHEN, Chui-Ya PENG, Ching YU, Pin-Hen LIN, Yen CHUANG, Yuh-Ta FAN
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Patent number: 7838158Abstract: The present invention provides a sheet anode based on modified zinc-aluminum alloys and Zinc-Air batteries containing the same. The sheet anode is consisted of ZnxAlyMz, wherein M comprises an element selected from the group consisting of alkaline metal and alkaline earth metal, or its further combination with at least one of Mn, Si and Cu; x, y and z each represents the weight percent of Zn, Al and M, and x+y+z=100; 2<y<50; and 0.5<z<6. The present invention also provides a sheet anode prepared from scrapped aluminum alloys, scrapped magnesium alloys, or scrapped zinc alloys, and the said sheet anode can be further made to be porous before use by proper etching.Type: GrantFiled: June 29, 2005Date of Patent: November 23, 2010Assignee: National Tsing Hua UniversityInventors: Tsung-Shune Chin, Chi-Jui Lan, Pin-Hen Lin
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Publication number: 20060003228Abstract: The present invention provides a sheet anode based on modified zinc-aluminum alloys and Zinc-Air batteries containing the same. The sheet anode is consisted of ZnxAlyMz, wherein M comprises an element selected from the group consisting of alkaline metal and alkaline earth metal, or its further combination with at least one of Mn, Si and Cu; x, y and z each represents the weight percent of Zn, Al and M, and x +y+z=100; 2<y<50; and 0.5<z<6. The present invention also provides a sheet anode prepared from scrapped aluminum alloys, scrapped magnesium alloys, or scrapped zinc alloys, and the said sheet anode can be further made to be porous before use by proper etching.Type: ApplicationFiled: June 29, 2005Publication date: January 5, 2006Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Tsung-Shune Chin, Chi-Jui Lan, Pin-Hen Lin