Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a semiconductor stack including semiconductor layers over a substrate, wherein the semiconductor layers are separated from each other and are stacked up along a direction substantially perpendicular to a top surface of the substrate; an isolation structure around a bottom portion of the semiconductor stack and separating active regions; a metal gate structure over a channel region of the semiconductor stack and wrapping each of the semiconductor layers; a gate spacer over a source/drain (S/D) region of the semiconductor stack and along sidewalls of a top portion of the metal gate structure; and an inner spacer over the S/D region of the semiconductor stack and along sidewalls of lower portions of the metal gate structure and wrapping edge portions of each of the semiconductor layers.

Abstract: An apparatus for manufacturing semiconductors includes a power amplifier to power a laser, a catalyst disposed in the power amplifier, an inlet port, and an exhaust port. The inlet port introduces a mixing gas to an interior of the power amplifier during a cleaning operation so that the mixing gas contacts a surface of the catalyst having a build-up thereon. The mixing gas reacts with and removes the build-up by generating gaseous by-products. The exhaust port removes the gaseous by-products from the power amplifier.

Abstract: A device model parameter generation system, comprises a user module, for obtaining parameter set configurations and measurement data of devices; a parameter extraction module, for performing parameter extractions on the parameter set configurations and the measurement data, to generate a parameter set; a simulation module, for performing simulations according to the parameter set configurations and the measurement data, to generate a simulation results; an analysis module, for determining whether the devices conform to a trend according to the parameter set, to generate a first determination result, and for determining whether the devices conform to a smoothness according to the first determination result and the parameter set, to generate a second determination result; and a device model parameter generation module, for generating a device model parameters according to the second determination result and the parameter set.

Abstract: Present invention is related to equipment for continuously processing electrochemical device or component for increasing capacity comprising a first reaction part, a second reaction part and a separated layer configured to be placed between the first reaction part and the second reaction part. The first reaction part comprises a counter electrode, a first reaction solution contained in a first reaction cell having a gas outlet. The first reaction solution will produce a first non-metallic ion, a second metallic ion and a third gas after conducting an electrochemical reaction. The second reaction part comprises a working electrode and a second reaction solution containing the second metallic ion permeated through the separated layer from the first reaction part. The second metallic ion will then be deposited as metal particles onto the working electrode which has been continuously fed into the second reaction part.

Abstract: A high-sensitivity light sensor includes a light sensing element, a first integrator, a comparator, and a second integrator. The light sensing element senses a light during a measurement time interval to generate a current. The first integrator integrates the current to generate a first integration signal. The comparator compares the first integration signal with a threshold value. While the first integration signal is greater than the threshold value, the comparison signal is at a first level. The second integrator is coupled to the first integrator and integrates the first integration signal to generate a second integration signal. The light sensor of the present invention uses two integrators to integrate the sensed voltage twice. Therefore, the light sensor of the present invention has a higher sensitivity.

Abstract: A proximity sensor includes a light source, an optical sensing element, and an integration circuit. The light source is turned on and off several times during a measurement time interval. When the light source is turned on and off, the optical sensing element senses the surrounding light to generate a first current and a second current, respectively. The integration circuit integrates the first current and the second current to generate a first integration signal and a second integration signal respectively for determining whether an object is approaching. When the light source is turned on, the present second integration signal is stored, and a stored first integration signal is used as a starting value to integrate the first current. When the light source is turned off, the present first integration signal is stored, and the stored second integration signal is used as a starting value to integrate the second current.

Abstract: A high-sensitivity light sensor includes a light sensing element, a first integrator, a comparator, and a second integrator. The light sensing element senses a light during a measurement time interval to generate a current. The first integrator integrates the current to generate a first integration signal. The comparator compares the first integration signal with a threshold value. While the first integration signal is greater than the threshold value, the comparison signal is at a first level. The second integrator is coupled to the first integrator and integrates the first integration signal to generate a second integration signal. The light sensor of the present invention uses two integrators to integrate the sensed voltage twice. Therefore, the light sensor of the present invention has a higher sensitivity.

Abstract: In order to prevent observed long-term energy decay of power amplifiers and correspondingly increase the lifespan of CO2 lasers employing them, a hydrogen-doped mixing gas is supplied from an external pipeline during operation or periodic maintenance in order to effectively remove solid contaminants that build-up over time on a surface of a catalyst disposed within the power amplifier.

Abstract: An optical sensing device includes a first sensor, a second sensor, a third sensor and a fourth sensor for sensing light to generate a first sensing signal, a second sensing signal, a third sensing signal and a fourth sensing signal, respectively. A spectrum of a coating of the first sensor includes a first peak of a X spectrum. A spectrum of a coating of the second sensor includes a second peak of the X spectrum. A spectrum of a coating of the third sensor includes a Y spectrum. A spectrum of a coating of the fourth sensor includes a Z spectrum. The first sensing signal and the second sensing signal are used to determine a X output value. The third sensing signal and the fourth sensing signal are used to determine a Y output value and a Z output value, respectively.

Abstract: The present disclosure provides an electromagnetic wave absorbing material, including a core containing iron oxide having a first thermal expansion coefficient; and a shell layer covering the core, which has a second thermal expansion coefficient less than the first thermal expansion coefficient, and the shell layer contains an inorganic compound selected from a group consisting of oxides, nitrides or any combination thereof. The present disclosure further provides a composite structure for suppressing electromagnetic interference including the electromagnetic wave absorbing material as claimed.

Abstract: A sunk-type package structure includes a substrate, an optical sensing chip, and a housing. The substrate has a cavity with a first depth. The optical sensing chip is disposed inside the cavity and electrically connected with the substrate. A surface of the optical sensing chip has a first sensing area for sensing light. The housing covers the substrate and the optical sensing chip. The housing has a light-permeable portion disposed above the first sensing area.

Abstract: In order to prevent observed long-term energy decay of power amplifiers and correspondingly increase the lifespan of CO2 lasers employing them, a hydrogen-doped mixing gas is supplied from an external pipeline during operation or periodic maintenance in order to effectively remove solid contaminants that build-up over time on a surface of a catalyst disposed within the power amplifier.

Abstract: An electromagnetic property measuring device includes a magnetic conductive structure, a coil, and a scattering parameter measuring unit. The magnetic conductive structure includes a first side facing a sample to be tested and a second side opposite to the first side, and the first side has a magnetic gap. The coil surrounds the magnetic conductive structure to generate a magnetic field with the magnetic conductive structure. The scattering parameter measuring unit is disposed at the first side and located within a range of the magnetic field.

Abstract: In accordance with some embodiments, a lithography method in semiconductor manufacturing is provided. The lithography method includes transmitting a main pulse laser to a zone of excitation through a first optic assembly. The lithography method further includes supplying a coolant to the first optic assembly and detecting a temperature of the coolant with a use of at least one sensor. The lithography method also includes adjusting a heat transfer rate between the coolant and the first optic assembly based on the temperature of the first optic assembly. In addition, the lithography method includes generating a droplet of a target material into the zone of excitation. The lithography method further includes exciting the droplet of the target material into plasma with the main pulse laser in the zone of excitation.

Abstract: An electronic device includes an OLED display having a plurality of pixels and an ambient light sensor disposed under a first pixel of the plurality of pixels. In a first sensing interval, the ambient light sensor generates a first sensing value. The first sensing interval includes a first period and a second period. The first pixel has a first brightness in the first period and has a second brightness the second period. In a second sensing interval, which has the same time length as the first sensing interval, the ambient light sensor generates a second sensing value. The first pixel has the second brightness in the second sensing interval. The first pixel has an identical hue in the first sensing interval and the second sensing interval. The ambient light sensor acquires an ambient light intensity according to the first sensing value and the second sensing value.

Abstract: The present invention relates to methods of upgrading biomass to provide useful chemical intermediates, fuels, amino acids, nutrients, etc. In particular examples, the biomass is a by-product of ethanol production and is mainly used as high-protein feed. Described herein are methods for upgrading such biomass, such as by implementing pre-treatment conditions and by employing fermentation conditions including modified organisms.

Abstract: A light sensor includes a light sensing element, a first integrator and a sigma-delta analog-to-digital converter. The light sensing element senses light during a measurement period to generate a first current. The first integrator is coupled to the light sensing element and configured to receive the first current and generates a first integration signal. The sigma-delta analog-to-digital converter is coupled to the first integrator and used to convert the first integration signal to a sensing value.