Abstract: The present invention provides a self-timed differential amplifier, including an amplifier unit, having a pair of read/write terminals, wherein data is read or written by a select line; a pair of precharge transistors, controlled by a control line; and a pair of cross-coupled transistors, controlled by a column select line. Moreover, a complementary differential amplifier is formed by the combination of the pair of precharge transistors and the pair of cross-coupled transistors. The pair of the precharge transistors and the pair of cross-coupled transistors are connected to the pair of read/write terminals of the amplifier unit.

Abstract: The present invention provides a self-timed differential amplifier, including an amplifier unit, having a pair of read/write terminals, wherein data is read or written by a select line; a pair of precharge transistors, controlled by a control line; and a pair of cross-coupled transistors, controlled by a column select line. Moreover, a complementary differential amplifier is formed by the combination of the pair of precharge transistors and the pair of cross-coupled transistors. The pair of the precharge transistors and the pair of cross-coupled transistors are connected to the pair of read/write terminals of the amplifier unit.

Abstract: The present invention provides a method of sensing data in a semiconductor device. First, an equalizing instructing signal is provided to stop precharging and equalizing the bit line pair while in a reading state. Then a wordline is selected to transmit the data in a memory cell to one of the pair of bit lines for obtaining a potential difference between the bit line pair. A sensing enable signal is subsequently provided to activate the shared sense amplifier for sensing and amplifying the data. And a potential level of the selecting control signal is boosted to a boosted potential level to restore and read the data by delaying a predetermined period of time.