Abstract: A method of fabricating a photomask includes selectively exposing portions of a photomask blank to radiation to change an optical property of the portions of the photomask blank exposed to the radiation, thereby forming a pattern of exposed portions of the photomask blank and unexposed portions of the photomask blank. The pattern corresponds to a pattern of semiconductor device features.

Abstract: A method of making a semiconductor device includes forming at least one fiducial mark on a photomask. The method further includes defining a pattern including a plurality of sub-patterns on the photomask in a pattern region. The defining the pattern includes defining a first sub-pattern of the plurality of sub-patterns having a first spacing from a second sub-pattern of the plurality of sub-patterns, wherein the first spacing is different from a second spacing between the second sub-pattern and a third sub-pattern of the plurality of sub-patterns.

Abstract: A composite material of complex alloy is provided and it is the Ceramic-Metal Composite based on a thermoelectric material filled with ceramic material. The composite material is represented by the following general formula (I). A1?xBx ??(I) In the general formula (I), 0.05?X?0.2; A represents a Half-Heusler thermoelectric material and its proportional composition is represented with the following formula (II). (Tia1Zrb1Hfc1)1?y?zNiy Snz ??(II) In the general formula (II), 0<a1<1, 0<b1<1, 0<c1<1, a1+b1+c1=1, 0.25?y?0.35, and 0.25?z?0.35; B represents at least one element selected from a group of C, O, and N.