Abstract: The present invention discloses a bacterium and an obtaining method and application thereof. The bacterium has a property of coproducing 1,3-propanediol and D-lactic acid. Further, the bacterium is Klebsiella oxytoca, including Klebsiella oxytoca PDL-5 CCTCC M 2016185. The obtaining method of the bacterium may be to obtain the bacterium by directly screening wild bacteria that satisfy conditions from the environment or performing gene engineering modification to wild bacteria. The present invention has the advantages that the bacteria can coproduce 1,3-propanediol and D-lactic acid through fermentation, the molar conversion rate and the concentration of the two products are very high, the types of byproducts are few, the concentration is low, the product extraction process is simplified, the high-efficiency biological production of 1,3-propanediol and D-lactic acid can be realized, and the industrial application prospect is very great.

Abstract: According to one embodiment, an X-ray diagnostic apparatus includes processing circuitry. The processing circuitry is configured to execute first calculation processing of calculating three-dimensional position information of each of an X-ray generator and an X-ray detector during rotation imaging, based on projection data acquired by executing the rotation imaging for a phantom with the X-ray generator and the X-ray detector arranged rotatably around the phantom.

Abstract: The invention provides isolated nucleic acids. For example, the invention provides isolated nucleic acids having at least one strand with both sense and antisense sequences that are complementary to each other. The invention also provides isolated nucleic acids having at least one strand that is a template for both sense and antisense sequences that are complementary to each other. In addition, the invention provides cells, viruses, and transgenic animals (e.g., transgenic non-human animals) containing one or more of the isolated nucleic acids provided herein as well as methods for using one or more of the isolated nucleic acids provided herein to reduce the level of an RNA (e.g., an mRNA) within a cell.

Abstract: The invention provides isolated nucleic acids. For example, the invention provides isolated nucleic acids having at least one strand with both sense and antisense sequences that are complementary to each other. The invention also provides isolated nucleic acids having at least one strand that is a template for both sense and antisense sequences that are complementary to each other. In addition, the invention provides cells, viruses, and transgenic animals (e.g., transgenic non-human animals) containing one or more of the isolated nucleic acids provided herein as well as methods for using one or more of the isolated nucleic acids provided herein to reduce the level of an RNA (e.g., an mRNA) within a cell.

Abstract: A vapor deposition apparatus for supplying raw-material gas into a reactor to form a thin film on a wafer substrate disposed in the reactor by vapor deposition, including at least a rotator for mounting the wafer substrate thereon, a treatment gas introducing port, a straightening vane having plural holes, and a wafer substrate feed-in/out port, wherein the lowermost portion of the wafer feed-in/out port is located at a predetermined height from the upper surface of the rotator, and the difference in height between the lowermost portion of the wafer feed-in/out port and the upper surface of the rotator is set to be larger than the thickness of a transition layer of the upper portion of the rotator. In a vapor deposition method, a wafer substrate is mounted on the rotator to form a thin film having little defect and uniform film thickness on the wafer substrate by using the vapor deposition apparatus.

Abstract: There is provided a vapor deposition apparatus for forming a thin film which includes plural reaction gas supply ports at the top portion of a hollow reactor, an exhaust port at the bottom of the reactor, a rotational substrate holder provided inside the reactor on which a wafer substrate is mounted. A straightening vane having plural gas holes formed therein is provided on an upper portion of the reactor. The reactor is partitioned into upper and lower portions which have different inside diameters, with the inner diameter of the upper portion being smaller than the inner diameter of lower portion. The lower end of the upper portion and the upper end of the lower portion are linked by a linking portion which has a predetermined shape to make continuous the hollow inside of the reactor. A thin film is formed on the surface of a wafer substrate, which is placed on the rotational substrate holder, by supplying a reaction gas into the reactor.

Abstract: A vapor deposition apparatus includes a cylindrical hollow reactor having gas supply ports at its upper portion and an exhaust port at its bottom portion. A rotational substrate holder, which seats a wafer substrate, is concentrically placed inside the reactor. The reactor has a straightening vane having gas holes concentrically positioned at its upper portion. Reaction gas is supplied into the reactor to form a thin film on the surface of the wafer substrate on the rotational substrate holder by vapor deposition. In one embodiment, the straightening vane is configured so that the flow rate of the reaction gas in the center portion covering the area of the wafer substrate and the gas flow rate of the reaction gas in the outer portion of the center portion are different from each other. In another embodiment, the reactor is sectioned into upper and lower portions. The inner diameter of the upper portion is smaller than the inner diameter of the lower portion.

Abstract: In a heat history initializing step, a heat treatment in performed in an atmosphere including at least one of hydrogen, helium, and argon while the temperature is increased in a range of 700.degree. C. to 1,000.degree. C. at a rate of 15.degree.-1,000.degree. C./min. In a controlled nuclei growing step, a heat treatment is performed in the above atmosphere while the temperature is kept constant in a range of 850.degree. C. to 980.degree. C. for 0.5-60 minutes.