Abstract: A cathode conductive strip can be attached to a semiconductor radiation sensor by using a double sided dual adhesive electrically conductive tape in a sensor assembly or a detector module to provide reliable electrical connection between the semiconductor radiation sensor and the cathode conductive strip. The double sided dual adhesive electrically conductive tape includes an electrically conductive backing with two different adhesion strength adhesives on both sides. The high adhesion strength side is bonded to the cathode electrode of the semiconductor radiation sensor. The lower adhesion strength side is bonded to the conductive face of the cathode conductive strip.

Abstract: A cathode conductive strip can be attached to a semiconductor radiation sensor by using a double sided dual adhesive electrically conductive tape in a sensor assembly or a detector module to provide reliable electrical connection between the semiconductor radiation sensor and the cathode conductive strip. The double sided dual adhesive electrically conductive tape includes an electrically conductive backing with two different adhesion strength adhesives on both sides. The high adhesion strength side is bonded to the cathode electrode of the semiconductor radiation sensor. The lower adhesion strength side is bonded to the conductive face of the cathode conductive strip.

Abstract: A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

Abstract: A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

Abstract: A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

Abstract: A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of patterning the solder mask layer, forming anode pixels over the rear major surface. Each anode pixel is formed between adjacent pixel-separation regions and a cathode electrode is located over the front major surface of the substrate. The solder mask can be used as a permanent photoresist in developing patterned electrodes on CdZnTe/CdTe devices as well as a permanent reliability protection coating. The method is very robust and ensures long-term reliability, outstanding detector performance, and may be used in applications such as medical imaging and for demanding other highly spectroscopic applications.

Abstract: A device includes (a) radiation detector including a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, and a plurality of anode electrodes on the rear surface of said semiconductor substrate, (b) a printed circuit board, and (c) an electrically conductive polymeric film disposed between circuit board and the anode electrodes. The polymeric film contains electrically conductive wires. The film bonds and electrically connects the printed circuit board and anode electrodes.

Abstract: A method of making a semiconductor radiation detector includes the steps of providing a semiconductor substrate having front and rear major opposing surfaces, forming a solder mask layer over the rear major surface, patterning the solder mask layer into a plurality of pixel separation regions, and after the step of patterning the solder mask layer, forming anode pixels over the rear major surface. Each anode pixel is formed between adjacent pixel-separation regions and a cathode electrode is located over the front major surface of the substrate. The solder mask can be used as a permanent photoresist in developing patterned electrodes on CdZnTe/CdTe devices as well as a permanent reliability protection coating. The method is very robust and ensures long-term reliability, outstanding detector performance, and may be used in applications such as medical imaging and for demanding other highly spectroscopic applications.

Abstract: A method of forming a passivation layer comprises contacting at least one surface of a wide band-gap semiconductor material with a passivating agent comprising an alkali hypochloride to form the passivation layer on said at least one surface. The passivation layer may be encapsulated with a layer of encapsulation material.

Abstract: A radiation detector includes a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of the semiconductor substrate configured so as to receive radiation, and a plurality of anode electrodes formed on the rear surface of said semiconductor substrate. A work function of the cathode electrode material contacting the front surface of the semiconductor substrate is lower than a work function of the anode electrode material contacting the rear surface of the semiconductor substrate.

Abstract: A method of forming a passivation layer comprises contacting at least one surface of a wide band-gap semiconductor material with a passivating agent comprising an alkali hypochloride to form the passivation layer on said at least one surface. The passivation layer may be encapsulated with a layer of encapsulation material.

Abstract: A device includes (a) radiation detector including a semiconductor substrate having opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, and a plurality of anode electrodes on the rear surface of said semiconductor substrate, (b) a printed circuit board, and (c) an electrically conductive polymeric film disposed between circuit board and the anode electrodes. The polymeric film contains electrically conductive wires. The film bonds and electrically connects the printed circuit board and anode electrodes.

Abstract: A radiation detector is described having a semiconductor substrate with opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, a plurality of anode electrodes located on the rear surface of said semiconductor substrate and a solder mask disposed above the anode electrodes. The solder mask has openings extending to the anode electrodes for placing solder in said openings.

Abstract: A radiation detector includes a semiconductor substrate with opposing front and rear surfaces, where a cathode electrode is located on the front surface, a plurality of anode electrodes located on the rear surface, and an electrically conductive housing is placed in electrical contact with the cathode electrode.

Abstract: A radiation detector includes a semiconductor substrate with opposing front and rear surfaces, where a cathode electrode is located on the front surface, a plurality of anode electrodes located on the rear surface, and an electrically conductive housing is placed in electrical contact with the cathode electrode.

Abstract: A radiation detector is described having a semiconductor substrate with opposing front and rear surfaces, a cathode electrode located on the front surface of said semiconductor substrate, a plurality of anode electrodes located on the rear surface of said semiconductor substrate and a solder mask disposed above the anode electrodes. The solder mask has openings extending to the anode electrodes for placing solder in said openings.

Abstract: An optical mode converter comprising a slow wave electrode structure and including Schottky barriers for preventing an accumulation of free carriers in the optical waveguide region of the converter. The Schottky barriers are also used for suppressing higher order modes in the waveguide. Low refractive index insulators are used to allow efficient driving of the device without hindering the impedance or the microwave index of the optical mode converter. Two-photon absorption processes are eliminated through the use of a waveguide semiconductor material having a bandgap of at least twice the photon energy of the light beam propagating through the optical mode converter.

Abstract: An optical mode converter comprising a slow wave electrode structure and including Schottky barriers for preventing an accumulation of free carriers in the optical waveguide region of the converter. The Schottky barriers are also used for suppressing higher order modes in the waveguide. Low refractive index insulators are used to allow efficient driving of the device without hindering the impedance or the microwave index of the optical mode converter. Two-photon absorption processes are eliminated through the use of a waveguide semiconductor material having a bandgap of at least twice the photon energy of the light beam propagating through the optical mode converter.