Abstract: The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

Abstract: The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

Abstract: A II-VI semiconductor diode laser has a II-VI semiconductor structure disposed atop a semiconductor substrate and covered with a contact layer. A current-blocking layer is disposed on top of this contact layer. The current-blocking layer has an etched groove extending therethrough, to expose a stripe of the contact layer. A metal electrode layer contacts the current-blocking layer and extends into the etched groove to contact the exposed stripe of the contact layer. The current-blocking layer confines the current flow between the metal electrode layer and the contact layer to the stripe of the contact layer exposed by the etched groove.

Abstract: A semiconductor structure useful in blue light emitting diodes and diode lasers is disclosed. The structure is formed of a substrate of p- type GaAs, a layer of a p- type II-VI compound of the formula Zn.sub.x Q.sub.1-x S.sub.y Se.sub.1-x where Q=Mg, Cd or Mn, 0.5.ltoreq.x.ltoreq.1 and 0.ltoreq.y.ltoreq.1, separated from the substrate by a series of thin epitaxial undoped or p-doped layers including a layer of In.sub.0.5 Al.sub.0.5 P in contact with the layer of the II-VI compound, a layer of In.sub.0.5 Ga.sub.0.5 P or of Al.sub.x Ga.sub.1-x As where x=0.1-0.3 contacting the substrate, a layer of In.sub.0.5 Ga.sub.0.5 P contacting the layer of Al.sub.x Ga.sub.1-x P and at least one layer of In.sub.0.5 Al.sub.2 Ga.sub.0.5-z P where 0<z<0.5 and the value of z decreases in the direction of the layer of In.sub.0.5 Ga.sub.0.5 P provided between and contacting the layer of In.sub.0.5 Al.sub.0.5 P and the layer of In.sub.0.5 Ga.sub.0.5 P.

Abstract: The present invention relates to semiconductor devices with ohmic contact to ZnSe-based layers and lasers derived therefrom wherein BeTe is used in a graded band gap layer. Preferably, an ohmic contact layer of BeTe-containing graded composition is used which consists essentially of Be.sub.x Zn.sub.1-x Te.sub.x Se.sub.1-x wherein x is within the range of 0 and 1 selected so as to provide substantial lattice matching to the lattice structure c the substrate. Specifically, Be.sub.x Zn.sub.1-x Te.sub.x Se.sub.1-x graded gap semiconductor layers are provided for application as ohmic contacts to p-type ZnSe, ZnS.sub.x Se.sub.1-x, Zn.sub.1-x Cd.sub.x S, Zn.sub.1-x Cd.sub.x S.sub.y Se.sub.1-y, Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y (wherein x and y are a number selected from 0 to 1) and other II-VI compound semiconductors used in lasers grown on GaAs substrates. Due to the close lattice match to GaAs substrate, graded (BeTe).sub.x (ZnSe).sub.

Abstract: A blue-green II/VI semiconductor injection laser utilizing a Zn.sub.1-u Cd.sub.u Se active layer (quantum well) having Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y cladding layers and ZnS.sub.z Se.sub.1-z guiding layers on a GaAs substrate. These devices are operable in a pulse mode at room temperature.