Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. A plurality of bitcells may be connectable to a common source voltage during a two-phase operation to place individual bitcells in intended impedance states.

Abstract: Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to digital to analog conversion using correlated electron switch devices ces.

Abstract: Disclosed are methods, systems and devices for powering up devices including non-volatile memory elements in an array of non-volatile memory elements. In one aspect, during a sequence for powering up an integrated device, non-volatile memory elements may be isolated from voltage supplies to avoid in advertent changes of memory states stored in the non-volatile memory elements.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. A plurality of bitcells may be connectable to a common source voltage during a two-phase operation to place individual bitcells in intended impedance states.

Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain. Additionally, bipolar write operations for set and reset may enable an increased write window and enhanced durability for a CES device.

Abstract: Disclosed are methods, systems and devices for powering up devices including non-volatile memory elements in an array of non-volatile memory elements. In one aspect, during a sequence for powering up an integrated device, non-volatile memory elements may be isolated from voltage supplies to avoid in advertent changes of memory states stored in the non-volatile memory elements.

Abstract: An analog-to-digital converter (ADC) and method of operation thereof are provided for converting an analog signal to a digital signal. The ADC utilizes Correlated Electron Material (CEM) devices that may contain a transition metal oxide (TMO), such as Nickel Oxide (NiO). The ADC may include an interconnect circuit that is operable to couple a power supply to the CEM devices. The power supply is controlled to program the resistance of the CEM devices and thereby control performance characteristics of the ADC.

Abstract: Example implementations relate to configuring a managed device. For example, configuration of a managed device may be performed by a services controller. The services controller may comprise a processing resource and a memory resource storing machine readable instructions to cause the processing resource to perform a number of actions. For instance, the services controller may manage configuration of a network using a hierarchical configuration model. The services controller may define a plurality of configuration elements for each of a plurality of managed devices in the hierarchical configuration model, where configuration elements shared among the plurality of managed devices are assigned a same setting from the services controller, and the configuration elements assigned by the services controller are customizable by each of the plurality of managed devices.

Abstract: In some examples, the validation controller may comprise a processing resource and a memory resource storing machine readable instructions to cause the processing resource to perform a number of actions. In some examples, the validation controller may determine functional capabilities for a topology that includes a plurality of devices to be configured by the validation controller. The validation controller may compare a configuration element for the plurality of devices to the functional capabilities for the plurality of devices. The validation controller may validate the configuration element based on the comparison. The validation controller may also push the configuration element to the plurality of devices when the configuration element is validated.

Abstract: Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to digital to analog conversion using correlated electron switch devices ces.

Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

Abstract: The present invention relates to a method of treating allergic rhinitis in a subject (e.g., a human) in need thereof comprising nasally administering to the subject an effective amount of a fixed-dose pharmaceutical composition comprising mometasone or its salt and olopatadine or its salt.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain.

Abstract: Techniques described in the disclosure are generally related to reserving padding bytes in system memory when storing data in the system memory. The reserving of padding bytes may allow a memory interface to efficiently utilize the channels to the system memory when storing or subsequently retrieving the data.

Abstract: A computer detects an entry of content by a first user in a collaboration application and determines the entry of content contains an identification of a second user, the identification indicating the entry of content and the identification are to be visible only to the first user and the second user. Responsive to determining the entry of content contains the identification of a second user, the computer copies the entry of content. The computer then sends the copied entry of content to the second user in the collaboration application.

Abstract: The present invention relates to a method of treating allergic rhinitis in a subject (e.g., a human) in need thereof comprising nasally administering to the subject an effective amount of a fixed-dose pharmaceutical composition comprising mometasone or its salt and olopatadine or its salt.

Abstract: Apparatus and methods for sharing a gas panel among a plurality of multi-zone gas feed chambers of a plasma processing chamber. Each multi-zone gas feed chamber is provided with its own multi-zone gas feed device to adjustably split the incoming gas flow into each chamber and provide the different gas flows to different zones of the multi-zone gas feed chamber.

Abstract: A system and method for processing a substrate in a processing chamber and providing an azimuthally evenly distributed draw on the processing byproducts using a gas pump down source coupled to the processing chamber above the plane of a substrate support within the processing chamber. The process chamber can include an annular plenum disposed between the support surface plane and the chamber top, the plenum including at least one vacuum inlet port coupled to the gas pump down source and a continuous inlet gap proximate to a perimeter of the substrate support, the continuous inlet gap having an inlet gas flow resistance of between about twice and about twenty times an outlet gas flow resistance the at least one vacuum inlet port.