Patents by Inventor Po-Chang Lin
Po-Chang Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210013159Abstract: A semiconductor structure includes a semiconductor device, a plurality of through semiconductor vias (TSV), a first seal ring, and a second seal ring. The TSVs penetrate through the semiconductor device. The TSVs are adjacent to an edge of the semiconductor device. The first seal ring is disposed on and physically connected to one end of each of the TSVs. The second seal ring is disposed on and physically connected to another end of each of the TSVs.Type: ApplicationFiled: September 24, 2020Publication date: January 14, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Rung-De Wang, Chen-Hsun Liu, Chin-Yu Ku, Te-Hsun Pang, Chia-Hua Wang, Pei-Shing Tsai, Po-Chang Lin
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Patent number: 10868148Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.Type: GrantFiled: December 4, 2018Date of Patent: December 15, 2020Assignee: UNITED MICROELECTRONICS CORP.Inventors: Po-Chang Lin, Bo-Han Huang, Chih-Chung Chen, Chun-Hsien Lin, Shih-Hung Tsai, Po-Kuang Hsieh
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Publication number: 20200350881Abstract: A bias circuit generates a bias current to an RF power amplifier used for transmitting RF signals, and the amount of the bias current supplied to the RF power amplifier can be configured in multiple modes through transistor switches that are controlled by mode control signals, so that the bias current supplied to the RF power amplifier can be adjusted according to the required power level of the transmitting RF signals. In addition, the bias current can be turned off by another transistor switch that is controlled by a power control signal for saving power while the RF power amplifier is not transmitting RF signals.Type: ApplicationFiled: May 3, 2019Publication date: November 5, 2020Inventors: Chih-Wen Wu, Po Chang Lin, Chun Hua Tseng
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Patent number: 10818612Abstract: A manufacturing method of a semiconductor structure includes at least the following steps. A semiconductor device having a first surface and a second surface opposite to the first surface is provided. A plurality of through semiconductor vias (TSV) embedded in the semiconductor device is formed. A first seal ring is formed over the first surface of the semiconductor device. The first seal ring is adjacent to edges of the first surface and is physically in contact with the TSVs. A second seal ring is formed over the second surface of the semiconductor device. The second seal ring is adjacent to edges of the second surface and is physically in contact with the TSVs.Type: GrantFiled: April 2, 2019Date of Patent: October 27, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Rung-De Wang, Chen-Hsun Liu, Chin-Yu Ku, Te-Hsun Pang, Chia-Hua Wang, Pei-Shing Tsai, Po-Chang Lin
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Publication number: 20200331178Abstract: Present invention is related to a microwave and electromagnetic heated foaming method, mold and foaming material thereof. The microwave and electromagnetic heated foaming method comprises steps of adding a foam material into a mold, simultaneously applying a microwave and electromagnetic energy toward the mold under a normal or low pressure, and the microwave and electromagnetic energy made the foam material into molded foam body. The mold of the present invention has a microwave penetrating part and an electromagnetic heating part. The microwave penetrating part has an extruded bottom that is corresponded to a dented top of the electromagnetic heat penetrating part. By utilizing the microwave and electromagnetic energy, the present invention is about to provide an efficient way for processing the foaming material compared to the conventional infrared or electrical heated tube heating and achieve the foam method that can be executed under normal or low pressure.Type: ApplicationFiled: April 15, 2020Publication date: October 22, 2020Inventors: Po-Chang Lin, Kuang-Tse Chin, Jung-Hsiang Hsieh, Ya-Chun Yu
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Publication number: 20200135899Abstract: A method for fabricating semiconductor device includes the steps of: forming fin-shaped structures on a substrate; using isopropyl alcohol (IPA) to perform a rinse process; performing a baking process; and forming a gate oxide layer on the fin-shaped structures. Preferably, a duration of the rinse process is between 15 seconds to 60 seconds, a temperature of the baking process is between 50° C. to 100° C., and a duration of the baking process is between 5 seconds to 120 seconds.Type: ApplicationFiled: December 4, 2018Publication date: April 30, 2020Inventors: Po-Chang Lin, Bo-Han Huang, Chih-Chung Chen, Chun-Hsien Lin, Shih-Hung Tsai, Po-Kuang Hsieh
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Publication number: 20190371741Abstract: A manufacturing method of a semiconductor structure includes at least the following steps. A semiconductor device having a first surface and a second surface opposite to the first surface is provided. A plurality of through semiconductor vias (TSV) embedded in the semiconductor device is formed. A first seal ring is formed over the first surface of the semiconductor device. The first seal ring is adjacent to edges of the first surface and is physically in contact with the TSVs. A second seal ring is formed over the second surface of the semiconductor device. The second seal ring is adjacent to edges of the second surface and is physically in contact with the TSVs.Type: ApplicationFiled: April 2, 2019Publication date: December 5, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Rung-De Wang, Chen-Hsun Liu, Chin-Yu Ku, Te-Hsun Pang, Chia-Hua Wang, Pei-Shing Tsai, Po-Chang Lin
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Patent number: 10390124Abstract: The present disclosure provides a transducer device including a driver and an audio system. The driver includes a diaphragm, a magnet, and a voice coil. The diaphragm vibrates in response to an external force. The magnet provides a magnetic field. The voice coil unit generates an inducing voltage by inducing a variation of the magnetic field in response to a vibration of the diaphragm. The audio system is coupled to the voice coil and includes an audio playing circuit and a wake-up circuit. The audio playing circuit outputs an audio signal to the voice coil unit. The wake-up circuit receives the inducing voltage and boots up the transducer device when the inducing voltage satisfies a predetermined condition.Type: GrantFiled: January 10, 2018Date of Patent: August 20, 2019Assignee: MERRY ELECTRONICS(SHENZHEN) CO., LTD.Inventor: Po-Chang Lin
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Publication number: 20190131251Abstract: A semiconductor structure includes a semiconductor device, a first seal ring, a second seal ring, and a plurality of through semiconductor vias (TSV). The semiconductor device has a first surface and a second surface opposite to the first surface. The first seal ring is disposed on the first surface of the semiconductor device and is adjacent to edges of the first surface. The second seal ring is disposed on the second surface of the semiconductor device and is adjacent to edges of the second surface. The TSVs penetrate through the semiconductor device and physically connect the first seal ring and the second seal ring.Type: ApplicationFiled: January 10, 2018Publication date: May 2, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Rung-De Wang, Chen-Hsun Liu, Chin-Yu Ku, Te-Hsun Pang, Chia-Hua Wang, Pei-Shing Tsai, Po-Chang Lin
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Patent number: 10276514Abstract: A semiconductor structure includes a semiconductor device, a first seal ring, a second seal ring, and a plurality of through semiconductor vias (TSV). The semiconductor device has a first surface and a second surface opposite to the first surface. The first seal ring is disposed on the first surface of the semiconductor device and is adjacent to edges of the first surface. The second seal ring is disposed on the second surface of the semiconductor device and is adjacent to edges of the second surface. The TSVs penetrate through the semiconductor device and physically connect the first seal ring and the second seal ring.Type: GrantFiled: January 10, 2018Date of Patent: April 30, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Rung-De Wang, Chen-Hsun Liu, Chin-Yu Ku, Te-Hsun Pang, Chia-Hua Wang, Pei-Shing Tsai, Po-Chang Lin
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Publication number: 20190075387Abstract: The present disclosure provides a transducer device including a driver and an audio system. The driver includes a diaphragm, a magnet, and a voice coil. The diaphragm vibrates in response to an external force. The magnet provides a magnetic field. The voice coil unit generates an inducing voltage by inducing a variation of the magnetic field in response to a vibration of the diaphragm. The audio system is coupled to the voice coil and includes an audio playing circuit and a wake-up circuit. The audio playing circuit outputs an audio signal to the voice coil unit. The wake-up circuit receives the inducing voltage and boots up the transducer device when the inducing voltage satisfies a predetermined condition.Type: ApplicationFiled: January 10, 2018Publication date: March 7, 2019Inventor: Po-Chang LIN
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Publication number: 20190028797Abstract: A high-fidelity audio device including a main microphone, a voice microphone and a process circuit. The main microphone receives sound and generates a main signal; the voice microphone perceives user's vocal vibration and produces a vocal signal; the process circuit collects the main signal and the vocal signal, superimposes and then decays the collected signals to generate a high-fidelity signal for high-definition broadcast realization.Type: ApplicationFiled: December 20, 2017Publication date: January 24, 2019Inventor: Po-Chang LIN
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Publication number: 20120152511Abstract: A latent heat thermal energy storage (LHTES) device for an electric vehicle (EV) comprises a chamber, a plurality of thermal conductivity enhancement units disposed in the chamber, and phase change material (PCM) filled in the chamber, allowing storage of coolness or thermal energy produced when the EV is being charged and retrieval of the coolness or thermal energy when the EV is driven to regulate the temperature of a passenger compartment of the EV. In addition, systems comprising LHTES devices and methods for controlling the same are also introduced.Type: ApplicationFiled: December 15, 2010Publication date: June 21, 2012Applicants: SUNNY GENERAL INTERNATIONAL CO., LTD.Inventors: CHIEN-LUNG CHANG, PO-CHANG LIN
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Publication number: 20110187325Abstract: A system and method for balancing a battery pack is disclosed. The method includes the step of monitoring voltages for all batteries in the battery pack and if the voltages of any two batteries are out of balance, then, issuing a balancing command to charge the battery that is relatively lower in voltage between the two until the voltage of the battery attaining a preset voltage. The battery-pack balancing system includes a battery-monitoring unit and a battery-balancing unit. The battery-monitoring unit monitors the voltage of all the batteries in the battery pack and, when the voltages of any of the two batteries in the battery pack is out of balance, issues a balancing command to charge the battery that is relatively lower voltage in the battery pack.Type: ApplicationFiled: February 4, 2010Publication date: August 4, 2011Inventors: Po Chang Lin, Chong Yu Wang
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Patent number: 7991439Abstract: A signal shielding box with a plurality of shielding covers is provided. The shielding covers are pivotally connected with a shielding case and cover one another so as to respectively conceal or expose the opening. A connector is positioned at the shielding case and is electrically connected with the wireless communication device within the shielding case. The connector is electrically connected with a measurement and analysis device out of the shielding case. The shielding covers are respectively opened and closed so as to expose and conceal the opening. Thus, a plurality of shielding effects are formed so as to shield and measure signals of the wireless communication device.Type: GrantFiled: March 31, 2008Date of Patent: August 2, 2011Assignee: Foxconn Communication Technology Corp.Inventors: Li-Kai Mao, Po-Chang Lin
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Publication number: 20090149141Abstract: A signal shielding box with a plurality of shielding covers is provided. The shielding covers are pivotally connected with a shielding case and cover one another so as to respectively conceal or expose the opening. A connector is positioned at the shielding case and is electrically connected with the wireless communication device within the shielding case. The connector is electrically connected with a measurement and analysis device out of the shielding case. The shielding covers are respectively opened and closed so as to expose and conceal the opening. Thus, a plurality of shielding effects are formed so as to shield and measure signals of the wireless communication device.Type: ApplicationFiled: March 31, 2008Publication date: June 11, 2009Applicant: MOBINNOVA HONG KONG LIMITEDInventors: LI-KAI MAO, PO-CHANG LIN