Abstract: A droplet catcher system of an EUV lithography apparatus is provided. The droplet catcher system includes a catcher body, a heat transfer part, a heat exchanger, and a controller. The catcher body has an outer surface. The heat transfer part is directly attached to the outer surface of the catcher body. The heat exchanger is thermally coupled to the heat transfer part. The controller is electrically coupled to the heat exchanger.

Abstract: A layout modification method for fabricating a semiconductor device is provided. The layout modification method includes calculating uniformity of critical dimensions of first and second portions in a patterned layer by using a layout for an exposure manufacturing process to produce the semiconductor device. A width of the first and second portions equals a penumbra size of the exposure manufacturing process. The penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. The layout modification method further includes compensating non-uniformity of the first and second portions of the patterned layer according to the uniformity of critical dimensions to generate a modified layout. The first portion is divided into a plurality of first sub-portions. The second portion is divided into a plurality of second sub-portions. Each second sub-portion is surrounded by two of the first sub-portions.

Abstract: The present disclosure provides a method for aligning a master oscillator power amplifier (MOPA) system. The method includes ramping up a pumping power input into a laser amplifier chain of the MOPA system until the pumping power input reaches an operational pumping power input level; adjusting a seed laser power output of a seed laser of the MOPA system until the seed laser power output is at a first level below an operational seed laser power output level; and performing a first optical alignment process to the MOPA system while the pumping power input is at the operational pumping power input level, the seed laser power output is at the first level, and the MOPA system reaches a steady operational thermal state.

Abstract: A control system includes a plurality of pressure sensors, each to detect a pressure in a respective dynamic gas lock (DGL) nozzle control region of a plurality of DGL nozzle control regions. Each DGL nozzle control region includes one or more DGL nozzles. The control system includes a plurality of mass flow controllers (MFCs). Each MFC of the plurality of MFCs is to control a flow velocity in a respective DGL nozzle control region of the plurality of DGL nozzle control regions. The control system includes a controller to selectively cause one or more MFCs of the plurality of MFCs to adjust flow velocities in one or more DGL nozzle control regions of the plurality of DGL nozzle control regions based on pressures detected by the plurality of pressure sensors in DGL nozzle control regions of the plurality of DGL nozzle control regions.

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

Abstract: A lithography apparatus is provided. The lithography apparatus includes a wafer stage configured to secure a semiconductor wafer and having a plurality of electrodes. The lithography apparatus also includes an exposure tool configured to perform an exposure process by projecting an extreme ultraviolet (EUV) light on the semiconductor wafer. The lithography apparatus further includes a controller configured to control power supplied to the electrodes to have a first adjusted voltage during the exposure process for a first group of exposure fields on the semiconductor wafer so as to secure the semiconductor wafer to the wafer stage. The first adjusted voltage is in a range from about 1.6 kV to about 3.2 kV.

Abstract: Extreme ultraviolet (EUV) lithography systems are provided. A EUV scanner is configured to perform a lithography exposure process in response to EUV radiation. A light source is configured to provide the EUV radiation to the EUV scanner. A measuring device is configured to measure concentration of debris caused by unstable target droplets in the chamber. A controller is configured to adjust a first gas flow rate and a second gas flow rate in response to the measured concentration of the debris and a control signal from the EUV scanner. A exhaust device is configured to extract the debris out of the chamber according to the first gas flow rate. A gas supply device is configured to provide a gas into the chamber according to the second gas flow rate. The control signal indicates the lithography exposure process is completed.

Abstract: A method includes ejecting a metal droplet from a reservoir of a first droplet generator assembled to a vessel; emitting an excitation laser from a laser source to the metal droplet to generate extreme ultraviolet (EUV) radiation; turning off the first droplet generator; cooling down the first droplet generator to a temperature not lower than about 150° C.; dismantling the first droplet generator from the vessel at the temperature not lower than about 150° C.; and assembling a second droplet generator to the vessel.

Abstract: A method for generating EUV light includes providing a laser beam having a Gaussian distribution. This laser beam can be then modified from a Gaussian distribution to a ring-like distribution. The modified laser beam is provided through an aperture in a collector and interfaces with a moving droplet target, which generates an extreme ultraviolet (EUV) wavelength light. The generated EUV wavelength light is provided to the collector away from the aperture. In some embodiments, a mask element may also be used to modify the laser beam to a shape.

Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.

Abstract: An EUV collector mirror for an extreme ultra violet (EUV) radiation source apparatus includes an EUV collector mirror body on which a reflective layer as a reflective surface is disposed, a heater attached to or embedded in the EUV collector mirror body and a drain structure to drain melted metal from the reflective surface of the EUV collector mirror body to a back side of the EUV collector mirror body.

Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.

Abstract: In a method of pattern formation information including a pattern size on a reticle is received. A width of an EUV radiation beam is adjusted in accordance with the information. The EUV radiation beam is scanned on the reticle. A photo resist layer is exposed with a reflected EUV radiation beam from the reticle. An increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width is greater when the width before adjustment is W1 compared to an increase of intensity per unit area of the EUV radiation beam on the reticle after the adjusting the width when the width before adjustment is W2 when W1>W2.

Abstract: A method for monitoring a shock wave in an extreme ultraviolet light source includes irradiating a target droplet in the extreme ultraviolet light source apparatus of an extreme ultraviolet lithography tool with ionizing radiation to generate a plasma and to detect a shock wave generated by the plasma. One or more operating parameters of the extreme ultraviolet light source is adjusted based on the detected shock wave.

Abstract: A method for generating light is provided. The method further includes measuring a period of time during which one of targets from a fuel target generator passes through two detection positions. The method also includes exciting the targets with a laser generator so as to generate plasma that emits light. In addition, the operation of exciting the targets with the laser generator includes: irradiating a pre-pulse laser on the targets to expand the targets; detecting conditions of expanded targets; and adjusting at least one parameter of the laser generator according to the measured period of time and the conditions when the measured period of time is different from a predetermined value. The parameter of the laser generator which is adjusted according to the measured period of time includes a frequency for generating a laser for illuminating the targets.

Abstract: A droplet generator for an extreme ultraviolet imaging tool includes a reservoir for a molten metal, and a nozzle having a first end connected to the reservoir and a second opposing end where molten metal droplets emerge from the nozzle. A gas inlet is connected to the nozzle, and an isolation valve is at the second end of the nozzle configured to seal the nozzle droplet generator from the ambient.

Abstract: An extreme ultra violet (EUV) radiation source apparatus includes a collector mirror, a target droplet generator for generating a tin (Sn) droplet, a rotatable debris collection device, one or more coils for generating an inductively coupled plasma (ICP), a gas inlet for providing a source gas for the ICP, and a chamber enclosing at least the collector mirror and the rotatable debris collection device. The gas inlet and the one or more coils are configured such that the ICP is spaced apart from the collector mirror.

Abstract: A metal reuse system for an extreme ultra violet (EUV) radiation source apparatus includes a first metal collector for collecting metal from vanes of the EUV radiation source apparatus, a first metal storage coupled to the first metal collector via a first conduit, a metal droplet generator coupled to the first metal storage via a second conduit, and a first metal filtration device disposed on either one of the first conduit and the second conduit.

Abstract: A method of controlling a droplet illumination module/droplet detection module system of an extreme ultraviolet (EUV) radiation source includes irradiating a target droplet with light from a droplet illumination module and detecting light reflected and/or scattered by the target droplet. The method includes determining whether an intensity of the detected light is within an acceptable range. In response to determining that the intensity of the detected light is not within the acceptable range, a parameter of the droplet illumination module is automatically adjusted to set the intensity of the detected light within the acceptable range.

Abstract: An extreme ultraviolet (EUV) source includes a module vessel and a scrubber system. The scrubber system may include a plurality of gutters in the module vessel. The plurality of gutters may include a first gutter and a second gutter. The second gutter may be lower than the first gutter in the module vessel. A unit volume of the second gutter is larger than a unit volume of the first gutter.