Abstract: The present disclosure provides an image sensor including a photodiode, a micro lens above the photodiode, a color filter between the photodiode and the micro lens, and a polyhedron lens film above the micro lens. The polyhedron lens film includes a plurality of polyhedron lens units protruding away from the photodiode, in which a plurality of orthogonal projections of the plurality of the polyhedron lens units are within an orthogonal projection of the photodiode. Each of the polyhedron lens units includes a bottom facet facing the photodiode, a top facet opposite to the bottom facet, and at least one side facet connecting the top facet and the bottom facet.

Abstract: A stacked via structure including a first dielectric layer, a first conductive via, a first redistribution wiring, a second dielectric layer and a second conductive via is provided. The first dielectric layer includes a first via opening. The first conductive via is in the first via opening. A first level height offset is between a top surface of the first conductive via and a top surface of the first dielectric layer. The first redistribution wiring covers the top surface of the first conductive via and the top surface of the first dielectric layer. The second dielectric layer is disposed on the first dielectric layer and the first redistribution wiring. The second dielectric layer includes a second via opening. The second conductive via is in the second via opening. The second conductive via is electrically connected to the first redistribution wiring through the second via opening of the second dielectric layer.

Abstract: A method includes the following steps. A photoresist is exposed to a first light-exposure through a first mask, wherein the first mask includes a first stitching region, and a first portion of the photoresist corresponding to a first opaque portion of the first stitching region is unexposed. The photoresist is exposed to a second light-exposure through a second mask, wherein the second mask includes a second stitching region, and a second portion of the photoresist corresponding to a second opaque portion of the second stitching region is unexposed and is overlapping with the first portion of the photoresist.

Abstract: A light-adjusting device having first regions and second regions is provided. The light-adjusting device includes pillars that form several groups of meta structures. The groups of meta structures correspond to the first regions, and from a top view, the first regions and the second regions are arranged in a checkerboard pattern.

Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a die, an underfill layer, a patterned dielectric layer and a plurality of conductive terminals. The die has a front surface and a back surface opposite to the front surface. The underfill layer encapsulates the die, wherein a surface of the underfill layer and the back surface of the die are substantially coplanar to one another. The patterned dielectric layer is disposed on the back surface of the die. The conductive terminals are disposed on and in contact with a surface of the patterned dielectric layer and partially embedded in the patterned dielectric layer to be in contact with the die, wherein a portion of the surface of the patterned dielectric layer that directly under each of the conductive terminals is substantially parallel with the back surface of the die.

Abstract: A semiconductor device having a redistribution structure and a method of forming the same are provided. A semiconductor device includes a semiconductor structure, a redistribution structure over and electrically coupled the semiconductor structure, and a connector over and electrically coupled to the redistribution structure. The redistribution structure includes a base via and stacked vias electrically interposed between the base via and the connector. The stacked vias are laterally spaced apart from the base via.

Abstract: A device includes a sensor die having a sensing region at a top surface of the sensor die, an encapsulant at least laterally encapsulating the sensor die, a conductive via extending through the encapsulant, and a front-side redistribution structure on the encapsulant and on the top surface of the sensor die, wherein the front-side redistribution structure is connected to the conductive via and the sensor die, wherein an opening in the front-side redistribution structure exposes the sensing region of the sensor die, and wherein the front-side redistribution structure includes a first dielectric layer extending over the encapsulant and the top surface of the sensor die, a metallization pattern on the first dielectric layer, and a second dielectric layer extending over the metallization pattern and the first dielectric layer.

Abstract: In an embodiment, a device includes: a molding compound; an integrated circuit die encapsulated in the molding compound; a through via adjacent the integrated circuit die; and a redistribution structure over the integrated circuit die, the molding compound, and the through via, the redistribution structure electrically connected to the integrated circuit die and the through via, the redistribution structure including: a first dielectric layer disposed over the molding compound; a first conductive via extending through the first dielectric layer; a second dielectric layer disposed over the first dielectric layer and the first conductive via; and a second conductive via extending through the second dielectric layer and into a portion of the first conductive via, an interface between the first conductive via and the second conductive via being non-planar.

Abstract: A shock wave generating unit includes a housing and a disk in the housing. The disk includes a vibration plate, which corresponds to a shock wave transmission member covering a first opening of the housing and includes an insulating thin elastic plate and a thin metal plate. The insulating thin elastic plate, with one side corresponding to the shock wave transmission member and the opposite side provided with the thin metal plate, has a hollow portion for partially exposing the thin metal plate and forms an accommodating cavity together with the exposed portion of the thin metal plate and the shock wave transmission member. A shock wave transmission medium can circulate through the accommodating cavity via a channel in the housing and is in contact with the exposed portion of the thin metal plate to facilitate dissipation of the heat generated by the disk during operation.

Abstract: An invasive shock wave applicator for applying shock waves sideways includes a bar-shaped invasive member and a disk. The invasive member defines a lateral side, has a first end with a recess extending inward from the lateral side, and is provided with a shock wave transmission member detachably sealing the opening of the recess. The disk is embedded in the invasive member; divides the recess into first and second receiving rooms, which are adjacent to and away from the shock wave transmission member respectively; and is provided with a vibration plate adjacent to the first receiving room and facing the shock wave transmission member. The first receiving room is filled with a shock wave transmission medium. Shock waves propagate toward the lateral side of the invasive member to facilitate the performance of an invasive shock wave treatment in a human cavity of the human body.

Abstract: A shock wave generating unit includes a housing and a disk in the housing. The disk includes a vibration plate, which corresponds to a shock wave transmission member covering a first opening of the housing and includes an insulating thin elastic plate and a thin metal plate. The insulating thin elastic plate, with one side corresponding to the shock wave transmission member and the opposite side provided with the thin metal plate, has a hollow portion for partially exposing the thin metal plate and forms an accommodating cavity together with the exposed portion of the thin metal plate and the shock wave transmission member. A shock wave transmission medium can circulate through the accommodating cavity via a channel in the housing and is in contact with the exposed portion of the thin metal plate to facilitate dissipation of the heat generated by the disk during operation.

Abstract: The present invention discloses a shockwave head structure having a bending angle. The shockwave head structure includes a shockwave waveguide body and a path regulation unit. The path regulation unit is located inside the shockwave waveguide body and can refract or reflect an energy wave entering from an incident port of the shockwave waveguide body to an exit port of the shockwave waveguide body, thereby regulating the path of the energy wave. With the implementation of the present invention, the shockwave head structure can be applied to different body parts or body positions. Thus, the practicability of the shockwave head structure is increased.