Patents by Inventor Po Hsuan Li

Po Hsuan Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD, SYSTEM AND NON-TRANSITORY STORAGE MEDIUM FOR GENERATING AND OUTPUTTING A MESSAGE
    Publication number: 20240086633
    Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.
    Type: Application
    Filed: April 25, 2023
    Publication date: March 14, 2024
    Inventors: Yi-Ru CHIU, Ting-Yi LI, Hong-Xun WANG, Jin-Lin CHEN, Chih-Hsuan YEH, Chia-Chi YIN, Wei-Ting LI, Po-Lun CHANG
  • Pellicle and method of manufacturing same
    Patent number: 11526073
    Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.
    Type: Grant
    Filed: March 11, 2022
    Date of Patent: December 13, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po Hsuan Li, Yu-Ting Lin, Yun-Yue Lin, Huai-Tei Yang
  • Pellicle and Method of Manufacturing Same
    Publication number: 20220197132
    Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.
    Type: Application
    Filed: March 11, 2022
    Publication date: June 23, 2022
    Inventors: Po Hsuan Li, Yu-Ting Lin, Yun-Yue Lin, Huai-Tei Yang
  • Pellicle and method of manufacturing same
    Patent number: 11340525
    Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.
    Type: Grant
    Filed: September 17, 2019
    Date of Patent: May 24, 2022
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Po Hsuan Li, Yu-Ting Lin, Yun-Yue Lin, Huai-Tei Yang
  • Pellicle and Method of Manufacturing Same
    Publication number: 20210080823
    Abstract: A pellicle comprises a stress-controlled metal layer. The stress in said metal layer may be between about 500-50 MPa. A method of manufacturing a pellicle comprising a metal layer includes deposing said metal layer by plasma physical vapor deposition. Process parameters are selected so as to produce a desired stress value in said metal layer, such as between about 500-50 MPa.
    Type: Application
    Filed: September 17, 2019
    Publication date: March 18, 2021
    Inventors: Po Hsuan Li, Yu-Ting Lin, Yun-Yue Lin, Huai-Tei Yang