Patents by Inventor Po-Shun Chiu
Po-Shun Chiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240157665Abstract: An apparatus and method for expanding a box blank into a box, the apparatus comprising an arm assembly, a controller, a camera and a box blank conveyor. The arm assembly includes a folding arm having a position in a first direction and a rotational angle controlled by the controller based on a position of a feature of the box blank in the field of view of the camera. The camera captures images of the box blank which are used to position the arm assembly and to evaluate the need to reject a box blank.Type: ApplicationFiled: January 17, 2024Publication date: May 16, 2024Inventors: Szu-Chen HUANG, Po-Hsien CHIU, Mao-Jung CHIU, Mao-Shun LIEN, Fu-Hsien LI
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Publication number: 20240162114Abstract: A power module including at least one power device, an insulation thermally conductive layer, and a heat dissipation device is provided. The insulation thermally conductive layer has a patterned circuit layer. The power device is disposed on the patterned circuit layer and is electrically connected to the patterned circuit layer. The heat dissipation device includes a heat dissipation plate and a heat dissipation base. The heat dissipation plate has a first surface and a second surface opposite to each other, and the insulation thermally conductive layer is disposed on the first surface. The heat dissipation base is partially bonded to the heat dissipation plate, and a chamber is formed between the heat dissipation plate and the heat dissipation bases. The heat dissipation base has a plurality of first heat dissipation bumps located in the chamber.Type: ApplicationFiled: February 9, 2023Publication date: May 16, 2024Applicant: Industrial Technology Research InstituteInventors: Shian-Chiau Chiou, Chun-Kai Liu, Po-Kai Chiu, Chih-Ming Tzeng, Yao-Shun Chen
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Patent number: 11911991Abstract: An apparatus and method for expanding a box blank into a box, the apparatus comprising an arm assembly, a controller, a camera and a box blank conveyor. The arm assembly includes a folding arm having a position in a first direction and a rotational angle controlled by the controller based on a position of a feature of the box blank in the field of view of the camera. The camera captures images of the box blank which are used to position the arm assembly and to evaluate the need to reject a box blank.Type: GrantFiled: July 21, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Szu-Chen Huang, Fu-Hsien Li, Mao-Jung Chiu, Mao-Shun Lien, Po-Hsien Chiu
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Patent number: 11810943Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: GrantFiled: September 1, 2022Date of Patent: November 7, 2023Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, Tsung-Hsun Chiang, Liang-Sheng Chi, Jing Jiang, Jie Chen, Tzung-Shiun Yeh, Hsin-Ying Wang, Hui-Chun Yeh, Chien-Fu Shen
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Patent number: 11677046Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: August 2, 2022Date of Patent: June 13, 2023Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20230005984Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: ApplicationFiled: September 1, 2022Publication date: January 5, 2023Inventors: Po-Shun CHIU, Tsung-Hsun CHIANG, Liang-Sheng CHI, Jing JIANG, Jie CHEN, Tzung- Shiun YEH, Hsin-Ying WANG, Hui-Chun YEH, Chien-Fu SHEN
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Publication number: 20220376143Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: August 2, 2022Publication date: November 24, 2022Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 11437547Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: November 23, 2020Date of Patent: September 6, 2022Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Patent number: 11437427Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: GrantFiled: January 23, 2020Date of Patent: September 6, 2022Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, Tsung-Hsun Chiang, Liang-Sheng Chi, Jing Jiang, Jie Chen, Tzung-Shiun Yeh, Hsin-Ying Wang, Hui-Chun Yeh, Chien-Fu Shen
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Publication number: 20210074890Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: November 23, 2020Publication date: March 11, 2021Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 10847682Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: July 12, 2019Date of Patent: November 24, 2020Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Publication number: 20200243598Abstract: A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.Type: ApplicationFiled: January 23, 2020Publication date: July 30, 2020Inventors: Po-Shun CHIU, Tsung-Hsun CHIANG, Liang-Sheng CHI, Jing JIANG, Jie CHEN, Tzung-Shiun YEH, Hsin-Ying WANG, Hui-Chun YEH, Chien-Fu SHEN
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Patent number: 10593829Abstract: A method of manufacturing a light-emitting device is disclosed. The method includes providing a light-emitting diode wafer, including a substrate and a semiconductor stack on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser on the light-emitting diode wafer and irradiating the light-emitting diode wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing an etching process; providing and focusing a second laser on an interior of the substrate to form one or a plurality of textured areas in the substrate; and providing force on the light-emitting diode wafer to separate the light-emitting diode wafer into a plurality of light-emitting diode chips along the plurality of scribing lines.Type: GrantFiled: October 12, 2018Date of Patent: March 17, 2020Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, De-Shan Kuo, Jhih-Jheng Yang, Jiun-Ru Huang, Jian-Huei Li, Ying-Chieh Chen, Zi-Jin Lin
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Publication number: 20190334069Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: July 12, 2019Publication date: October 31, 2019Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU
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Patent number: 10411177Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: GrantFiled: June 26, 2018Date of Patent: September 10, 2019Assignee: EPISTAR CORPORATIONInventors: De-Shan Kuo, Ting-Chia Ko, Chun-Hsiang Tu, Po-Shun Chiu
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Patent number: 10396243Abstract: A light-emitting device includes: a rectangular shape with a first side, a second side opposite to the first side, and a third side connecting the first side and the second side; a light-emitting stack, comprising a lower semiconductor layer, an upper semiconductor layer, and an active layer between the lower semiconductor layer and the upper semiconductor layer; a first electrode formed on the lower semiconductor layer, comprising a first electrode pad and a first extension electrode; a second electrode formed on the upper semiconductor layer, comprising a second electrode pad and a second extension electrode; and a first current blocking layer formed between the lower semiconductor layer and the first electrode pad, wherein the first current blocking layer comprises a top surface and side surfaces; wherein the first electrode pad covers the top surface and the side surfaces of the first current blocking layer and contacts the lower semiconductor layer.Type: GrantFiled: July 9, 2018Date of Patent: August 27, 2019Assignee: Epistar CorporationInventors: Chien-Kai Chung, Po-Shun Chiu, Hsin-Ying Wang, De-Shan Kuo, Tsun-Kai Ko, Yu-Ting Huang
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Publication number: 20190051791Abstract: A method of manufacturing a light-emitting device is disclosed. The method includes providing a light-emitting diode wafer, including a substrate and a semiconductor stack on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser on the light-emitting diode wafer and irradiating the light-emitting diode wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing an etching process; providing and focusing a second laser on an interior of the substrate to form one or a plurality of textured areas in the substrate; and providing force on the light-emitting diode wafer to separate the light-emitting diode wafer into a plurality of light-emitting diode chips along the plurality of scribing lines.Type: ApplicationFiled: October 12, 2018Publication date: February 14, 2019Inventors: Po-Shun CHIU, De-Shan KUO, Jhih-Jheng YANG, Jiun-Ru HUANG, Jian-Huei LI, Ying-Chieh CHEN, Zi-Jin LIN
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Patent number: 10134946Abstract: A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser to the LED wafer and irradiating the LED wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips.Type: GrantFiled: June 19, 2017Date of Patent: November 20, 2018Assignee: EPISTAR CORPORATIONInventors: Po-Shun Chiu, De-Shan Kuo, Jhih-Jheng Yang, Jiun-Ru Huang, Jian-Huei Li, Ying-Chieh Chen, Zi-Jin Lin
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Publication number: 20180315889Abstract: A light-emitting device includes: a rectangular shape with a first side, a second side opposite to the first side, and a third side connecting the first side and the second side; a light-emitting stack, comprising a lower semiconductor layer, an upper semiconductor layer, and an active layer between the lower semiconductor layer and the upper semiconductor layer; a first electrode formed on the lower semiconductor layer, comprising a first electrode pad and a first extension electrode; a second electrode formed on the upper semiconductor layer, comprising a second electrode pad and a second extension electrode; and a first current blocking layer formed between the lower semiconductor layer and the first electrode pad, wherein the first current blocking layer comprises a top surface and side surfaces; wherein the first electrode pad covers the top surface and the side surfaces of the first current blocking layer and contacts the lower semiconductor layer.Type: ApplicationFiled: July 9, 2018Publication date: November 1, 2018Inventors: Chien-Kai CHUNG, Po-Shun CHIU, Hsin-Ying WANG, De-Shan KUO, Tsun-Kai KO, Yu-Ting HUANG
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Publication number: 20180309038Abstract: A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.Type: ApplicationFiled: June 26, 2018Publication date: October 25, 2018Inventors: De-Shan KUO, Ting-Chia KO, Chun-Hsiang TU, Po-Shun CHIU