Abstract: A semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the first diode, wherein the first and second doped regions are coupled to a first voltage terminal; a first well of the first conductivity type surrounding the first and second doped regions in a layout view; a third doped region of the first conductivity type configured as a first terminal, coupled to an input/output pad, of a second diode; and a second well of the second conductivity type surrounding the third doped region in the layout view. The second and third doped regions, the first well, and the second well are configured as a first electrostatic discharge path between the I/O pad and the first voltage terminal.

Abstract: The present disclosure relates to a method for forming a mark, a packaging method for a semiconductor device, and a semiconductor device having the mark, wherein the marking material is a polymer compound and the light transmittance of the marking material is less than 50%, which is suitable for forming the mark on the semiconductor device by laser sintering, and the marking material is sintered to make the resin cross-link and cure to form a cured product. In addition, in one embodiment, the cured product formed by the marking material can be used as a deflector to guide the flow of the underfill and control the flow rate of underfill, so as to effectively solve the problem of uneven flow rate of the underfill.

Abstract: A thin film transistor includes an active layer and at least one gate stack. The active layer may be formed using multiple iterations of a unit layer stack deposition process, which includes an acceptor-type oxide deposition process and a post-transition metal oxide deposition process. A surface of each gate dielectric within the at least one gate stack contacts a surface of a respective layer of the oxide of the acceptor-type element so that leakage current of the active layer may be minimized. A source electrode and a drain electrode may contact an oxide layer providing lower contact resistance such as a layer of the post-transition metal oxide or a zinc oxide layer within the active layer.

Abstract: A semiconductor device includes a first diode, a second diode, a clamp circuit and a third diode. The first diode is coupled between an input/output (I/O) pad and a first voltage terminal. The second diode is coupled with the first diode, the I/O pad and a second voltage terminal. The clamp circuit is coupled between the first voltage terminal and the second voltage terminal. The second diode and the clamp circuit are configured to direct a first part of an electrostatic discharge (ESD) current flowing between the I/O pad and the first voltage terminal. The third diode, coupled to the first voltage terminal, and the second diode include a first semiconductor structure configured to direct a second part of the ESD current flowing between the I/O pad and the first voltage terminal.

Abstract: A keyswitch includes a board, a cap located above the board, a membrane circuit board disposed on the board to make first and second engaging structures of the board protrude from first and second holes of the membrane circuit board respectively, and a lifting device. The lifting device is connected to the cap and the board and includes first and second support members. The first support member is movably connected to the cap and has a pivot end portion. The pivot end portion is movably connected to the first and second engaging structures and has a first abutting portion extending toward edges of the first and second holes along a pivot axis of the first engaging structure. The first abutting portion abuts on the membrane circuit board. The second support member rotatably intersects with the first support member and is movably connected to the cap and the board.

Abstract: A method forming a grating device includes: providing a substrate; entering the substrate into a process chamber; and depositing a grating material on the substrate to form a grating material layer on the substrate. A refractive index of the grating material gradually changes during depositing the grating material in the process chamber. The grating material layer includes a varying refractive index.

Abstract: Structures and methods of forming fan-out packages are provided. The packages described herein may include a cavity substrate, one or more semiconductor devices located in a cavity of the cavity substrate, and one or more redistribution structures. Embodiments include a cavity preformed in a cavity substrate. Various devices, such as integrated circuit dies, packages, or the like, may be placed in the cavity. Redistribution structures may also be formed.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A magnetoresistive random access memory (MRAM) device includes a first array region and a second array region on a substrate, a first magnetic tunneling junction (MTJ) on the first array region, a first top electrode on the first MTJ, a second MTJ on the second array region, and a second top electrode on the second MTJ. Preferably, the first top electrode and the second top electrode include different nitrogen to titanium (N/Ti) ratios.

Abstract: In some embodiments, a semiconductor device is provided, including a first doped region of a first conductivity type configured as a first terminal of a first diode, a second doped region of a second conductivity type configured as a second terminal of the first diode, wherein the first and second doped regions are coupled to a first voltage terminal; a first well of the first conductivity type surrounding the first and second doped regions in a layout view; a third doped region of the first conductivity type configured as a first terminal, coupled to an input/output pad, of a second diode; and a second well of the second conductivity type surrounding the third doped region in the layout view. The second and third doped regions, the first well, and the second well are configured as a first electrostatic discharge path between the I/O pad and the first voltage terminal.

Abstract: A magnetoresistive random access memory (MRAM) structure, including a substrate and multiple MRAM cells on the substrate, wherein the MRAM cells are arranged in a memory region adjacent to a logic region. An ultra low-k (ULK) layer covers the MRAM cells, wherein the surface portion of ultra low-k layer is doped with fluorine, and dents are formed on the surface of ultra low-k layer at the boundaries between the memory region and the logic region.

Abstract: A keyboard includes a plurality of keyswitches, a plastic baseplate, and a membrane circuit board. Each keyswitch has a keycap, a lifting mechanism and an elastic member. The lifting mechanism is movably connected to the keycap. The elastic member abuts against the keycap. The plastic baseplate has a first hole formed corresponding to each elastic member and has a connecting structure corresponding to each lifting mechanism. The connecting structure is movably connected to the lifting mechanism to make the keycap movable relative to the plastic baseplate. The membrane circuit board is disposed under the plastic baseplate. Each elastic member passes through the first hole on the plastic baseplate to be disposed on the membrane circuit board. When the keycap is pressed, the elastic member deforms downward to trigger the membrane circuit board. When the keycap is released, the elastic member returns the keycap to its original position.

Abstract: A keyboard is applied to mounting on a holding baseplate of a computer device and includes a plurality of keyswitches, a membrane circuit board and a baseplate. The membrane circuit board is disposed under the plurality of keyswitches. The baseplate is disposed between the plurality of keyswitches and the membrane circuit board and is connected to the plurality of keyswitches, so as to make the plurality of keyswitches movable relative to the baseplate for triggering the membrane circuit board. The baseplate has a plurality of hooks. The plurality of hooks passes through the membrane circuit board to be engaged with a plurality of engaging hole structures of the holding baseplate respectively, so as to detachably mount the keyboard on the computer device. A number of the plurality of hooks is greater than forty.

Abstract: A backlight module is applied to providing light to a plurality of keyswitches of a keyboard. Each keyswitch has a keycap and an elastic member abutting against the keycap. The backlight module includes a membrane circuit board and a light guide plate. The membrane circuit board has a light emitting diode corresponding to the keyswitch. The light emitting diode is located at a side of the elastic member and emits light to the keycap. The light guide plate is disposed on the membrane circuit board. The light guide plate has a slot hole for containing the light emitting diode and has a hole corresponding to the elastic member. An optical microstructure is formed on the light guide plate for guiding light of the light emitting diode to be incident to the keycap. The elastic member passes through the hole to be disposed on the membrane circuit board.

Abstract: A keyswitch structure includes a base plate, a keycap, a first support, and a second support. The keycap is located above the base plate. The first support is connected to and between the keycap and the base plate and has an upper connection portion, a lower connection portion, and a protruding limitation portion. The upper connection portion is located between the lower connection portion and the protruding limitation portion. The first support is rotatably connected to the keycap and the base plate through the upper connection portion and the lower connection portion respectively. The protruding limitation portion is located close to and under the cap body. The second support is connected to and between the keycap and the base plate. The keycap moves up and down relative to the base plate through the first support and the second support.

Abstract: A keyswitch structure includes a base plate, a keycap, a first support, and a second support. The keycap is located above the base plate. The first support is connected to and between the keycap and the base plate and has an upper connection portion, a lower connection portion, and a protruding limitation portion. The upper connection portion is located between the lower connection portion and the protruding limitation portion. The first support is rotatably connected to the keycap and the base plate through the upper connection portion and the lower connection portion respectively. The protruding limitation portion is located close to and under the cap body. The second support is connected to and between the keycap and the base plate. The keycap moves up and down relative to the base plate through the first support and the second support.

Abstract: A peripheral device includes a manual operable device, a baseplate for carrying the manual operable device and a circuit board. The baseplate includes a plate edge extending substantially along an x-axis; a left plate indent edge, a left convex edge, a substantially linear edge, a right convex edge and a right plate indent edge are sequentially disposed on the plate edge. The circuit board includes a main portion and a flexible extension. The main portion generates a control signal in response to a triggering event at the manual operable device. The flexible extension extends substantially along a y-axis, and includes an upper end, a lower end, a y-axial left edge and a y-axial right edge; the upper end is connected to the main portion, the lower end is connected to an external connection point, and the control signal is transmitted to the external connection point via the flexible extension.

Abstract: A peripheral device includes a manual operable device, a baseplate for carrying the manual operable device and a circuit board. The baseplate includes a plate edge extending substantially along an x-axis; a left plate indent edge, a left convex edge, a substantially linear edge, a right convex edge and a right plate indent edge are sequentially disposed on the plate edge. The circuit board includes a main portion and a flexible extension. The main portion generates a control signal in response to a triggering event at the manual operable device. The flexible extension extends substantially along a y-axis, and includes an upper end, a lower end, a y-axial left edge and a y-axial right edge; the upper end is connected to the main portion, the lower end is connected to an external connection point, and the control signal is transmitted to the external connection point via the flexible extension.

Abstract: A back light structure for a keyboard with back light includes a supporting plate, a light guiding plate, a flexible circuit board, and a light-emitting component. Keyswitch structures of the keyboard are disposed on the supporting plate. The light guiding plate is disposed under the supporting plate and has a through hole and a lateral surface. The circuit board adheres onto both a lower surface of the light guiding plate and a bottom surface of the supporting plate and covers the lateral surface. The light-emitting component is disposed on the circuit board in the through hole. Thereby, the circuit board also performs as a light shading structure for the lateral surface. A light reflection sheet need not cover both the lateral surface and the circuit board for avoiding light leakage but adheres onto only the lower surface, conducive to reducing the structural thickness of the back light structure.

Abstract: A quantification method and an imaging method are disclosed, capable of quantifying the margin feature, the cysts feature, the calcifications feature, the echoic feature and the heterogenesis feature of a tumor, and capable of imaging the margin feature, the cysts feature, the calcifications feature and the heterogenesis feature of a tumor. The quantification method and the imaging method calculate the moving variance of the gray scale of each of the pixel points based on the gradient value of the gray scale of these pixel points. Then, depending on the purpose of the quantification method or the imaging method, the maximum value, the minimum value, the mean value, and the standard deviation of the moving variance of the gray scale of these pixel points are calculated, respectively. At final, with the definition of the threshold value and the imaging rule, the above features of the tumor are quantified or imaged.