Abstract: A process of irradiation Sn containing Pb-free solder to mitigate whisker formation and growth thereon is provided. The use of gamma radiation such as cobalt-60 has been applied to a substrate of Sn on copper has been found to change the morphology of the crystalline whisker growth to a more truncated hillock pattern. The change in morphology greatly reduces the tendency of whiskers to contribute to electrical short-circuits being used as a Pb-free solder system on a copper substrate.

Abstract: A process of irradiation Sn containing Pb-free solder to mitigate whisker formation and growth thereon is provided. The use of gamma radiation such as cobalt-60 has been applied to a substrate of Sn on copper has been found to change the morphology of the crystalline whisker growth to a more truncated hillock pattern. The change in morphology greatly reduces the tendency of whiskers to contribute to electrical short-circuits being used as a Pb-free solder system on a copper substrate.

Abstract: The present invention discloses a hydrogen storage device having a storage component containing gaseous hydrogen at a pressure greater than 500 pounds per square inch (psi), the storage component having a moving component therewithin. The moving component is made from an iron-base alloy and has a moving surface that is displaced relative to a mating surface during operation of the hydrogen storage device. The moving surface and the mating surface are subject to wear when the moving surface is displaced relative to the mating surface. In addition, the moving surface and/or mating surface has a coating that reduces wear between the two surfaces.