Abstract: The apparatus for etching a thin film using the plasma includes a reaction chamber having a diffusion area and a reaction area; an upper electrode disposed in the top of the reaction area; a lower electrode spaced apart from the upper electrode and arranged at the bottom of the reaction area; a RF power supply applying RF power to the upper and lower electrodes so as to form the plasmas between the upper and lower electrodes; a gas inlet applying processing gases to the diffusion area; gas-exhausting members sucking the residual plasmas and byproducts of the plasma etch; a buffer plate surrounding the lower electrode at the bottom of the reaction chamber and having a plurality of vent holes and vent hole protectors; and a shielding member between the lower electrode and the buffer plate, the shielding plate protecting the lower electrode from the plasmas.

Abstract: The apparatus for etching a thin film using the plasma includes a reaction chamber having a diffusion area and a reaction area; an upper electrode disposed in the top of the reaction area; a lower electrode spaced apart from the upper electrode and arranged at the bottom of the reaction area; a RF power supply applying RF power to the upper and lower electrodes so as to form the plasmas between the upper and lower electrodes; a gas inlet applying processing gases to the diffusion area; gas-exhausting members sucking the residual plasmas and byproducts of the plasma etch; a buffer plate surrounding the lower electrode at the bottom of the reaction chamber and having a plurality of vent holes and vent hole protectors; and a shielding member between the lower electrode and the buffer plate, the shielding plate protecting the lower electrode from the plasmas.