Patents by Inventor Poong Yeub Lee

Poong Yeub Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6377496
    Abstract: A word line voltage regulation circuit includes a first comparator for comparing a first reference voltage and the potential of an output node; a first switching element for supplying the supply voltage to the output node depending on the output signal of the first comparator; a second comparator for comparing a second reference voltage and the potential of the output node; a second switching element for regulating the potential of the output node depending on the output signal of the second comparator; a third switching element for transmitting the potential of the output node to a decoder circuit depending on a first control signal; and a fourth switching element for supplying the supply voltage to the decoder circuit depending on a second control signal.
    Type: Grant
    Filed: November 28, 2000
    Date of Patent: April 23, 2002
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Poong Yeub Lee, Im Cheol Ha, Kye Wan Shin, Oh Won Kwon, Sung Hwan Seo
  • Patent number: 6195293
    Abstract: A method of erasing a flash memory according to the present invention includes the steps of: performing a first loop erasing operation so that a source electrode is floated, a program gate electrode is applied with a negative voltage and a drain electrode is supplied with an initial erasing voltage; and performing a second loop erasing operation so that the source electrode is floated, the program gate electrode is applied with the negative voltage and the drain electrode is supplied with a normal erasing voltage higher than the initial erasing voltage.
    Type: Grant
    Filed: September 27, 1999
    Date of Patent: February 27, 2001
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventors: Jung Hee Yun, Poong Yeub Lee
  • Patent number: 5835407
    Abstract: A flash memory device according to this invention comprises a main cell array block consisted of a main cell array and a dummy cell array; a first and second multiplex blocks to which data of the main cell array are input; a first and second column multiplex blocks to which data of the main cell array block are input; a first and second repair multiplexers to control the first and second multiplex blocks; a third to fifth repair multiplexers to control the first and second column multiplex blocks; a first to fifth decoders to access said main cell array of the cell array block according to an address input; a sixth and seventh decoders to access repair cell array of the cell array block according to the address input; and a redundancy fuse block comparing the inputted address with repair address and determining whether repair be done or not.
    Type: Grant
    Filed: December 29, 1997
    Date of Patent: November 10, 1998
    Assignee: Hyundai Electronics Industries Co., Ltd.
    Inventor: Poong Yeub Lee