Patents by Inventor Pooria MOSTAFALU
Pooria MOSTAFALU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11979675Abstract: Image sensing devices are disclosed. In one example, an image sensing device includes a pixel unit cell with both event sensing (EVS) pixels and imaging pixels. The EVS and imaging pixels are configured to include event sensing and imaging pixel transistors formed in the same transistor layer of an integrated circuit assembly that also includes the photodiodes of the EVS and imaging pixels. The photodiodes are separated by a rear deep trench isolation (RDTI), and the EVS and imaging pixel transistors are arranged along (e.g., underneath) boundary areas formed by the RDTI, maximizing the space available for the photodiodes and economizing on wiring requirements for the EVS and imaging pixels.Type: GrantFiled: April 25, 2022Date of Patent: May 7, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Hongyi Mi, Frederick T. Brady, Sungin Han, Pooria Mostafalu
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Patent number: 11929383Abstract: A pixelated image sensor capable of simultaneously supporting an EVS mode and an image-frame capture mode of operation. An individual pixel of the sensor comprises two distinct sets of subpixels involved in the two modes, respectively, and at least two corresponding, functionally different and independent electrical circuits. The metal interconnect structure of the image-sensor IC is implemented using a wiring topology in which spatial overlap between the wirings of the two electrical circuits is optimized (e.g., minimized) to reduce inter-circuit crosstalk when the two circuits are active at the same time. Such wiring topology may be beneficial, e.g., due to the resulting improvements in the image quality for both operating modes.Type: GrantFiled: March 23, 2022Date of Patent: March 12, 2024Assignee: Sony Semiconductor Solutions CorporationInventors: Hongyi Mi, Frederick T. Brady, Sungin Han, Pooria Mostafalu
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Publication number: 20240031697Abstract: An imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. The isolation structure may be in the form of a full thickness dielectric trench isolation structure.Type: ApplicationFiled: August 3, 2023Publication date: January 25, 2024Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Pooria Mostafalu, Frederick Brady
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Publication number: 20230345147Abstract: Image sensing devices are disclosed. In one example, an image sensing device includes a pixel unit cell with both event sensing (EVS) pixels and imaging pixels. The EVS and imaging pixels are configured to include event sensing and imaging pixel transistors formed in the same transistor layer of an integrated circuit assembly that also includes the photodiodes of the EVS and imaging pixels. The photodiodes are separated by a rear deep trench isolation (RDTI), and the EVS and imaging pixel transistors are arranged along (e.g., underneath) boundary areas formed by the RDTI, maximizing the space available for the photodiodes and economizing on wiring requirements for the EVS and imaging pixels.Type: ApplicationFiled: April 25, 2022Publication date: October 26, 2023Inventors: Hongyi Mi, Frederick T. Brady, Sungin Han, Pooria Mostafalu
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Publication number: 20230336881Abstract: Binning in a hybrid pixel structure of image pixels and event vision sensor (EVS) pixels. In one embodiment, the imaging sensor includes a pixel array including a plurality of pixel circuits and a plurality of binning transistors. A first portion of the plurality of pixel circuits individually includes an intensity photodiode. A second portion of the plurality of pixel circuits individually includes an event vision sensor (EVS) photodiode. The plurality of binning transistors is configured to bin together at least one of the first portion or the second portion.Type: ApplicationFiled: April 15, 2022Publication date: October 19, 2023Inventors: Pooria Mostafalu, Frederick T. Brady, Sungin Han, Hongyi Mi
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Publication number: 20230326952Abstract: A pixelated image sensor capable of simultaneously supporting an EVS mode and an image-frame capture mode of operation. An individual pixel of the sensor comprises two distinct sets of subpixels involved in the two modes, respectively, and at least two corresponding, functionally different and independent electrical circuits. The metal interconnect structure of the image-sensor IC is implemented using a wiring topology in which spatial overlap between the wirings of the two electrical circuits is optimized (e.g., minimized) to reduce inter-circuit crosstalk when the two circuits are active at the same time. Such wiring topology may be beneficial, e.g., due to the resulting improvements in the image quality for both operating modes.Type: ApplicationFiled: March 23, 2022Publication date: October 12, 2023Inventors: Hongyi Mi, Frederick T. Brady, Sungin Han, Pooria Mostafalu
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Patent number: 11758300Abstract: An imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. The isolation structure may be in the form of a full thickness dielectric trench isolation structure.Type: GrantFiled: January 24, 2022Date of Patent: September 12, 2023Assignee: Sony Semiconductor Solutions CorporationInventors: Pooria Mostafalu, Frederick Brady
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Publication number: 20230062826Abstract: An imaging device with a plurality of image sensing pixels and a plurality of event detection pixels is provided. Each image sensing pixel includes a photoelectric conversion element and an imaging signal generation readout circuit. The image sensing readout circuit can be shared by a plurality of photoelectric conversion elements. Each event detection pixel includes a photoelectric conversion element and an event detection readout circuit. The event detection readout circuit can be shared by a plurality of photoelectric conversion elements. In addition, the photoelectric conversion element of an event detection pixel can be selectively connected to a shared imaging signal generation readout circuit. The number of image sensing pixels is greater than the number of event detection pixels. In addition, the area of a photoelectric conversion element of an event detection pixel can be greater than the area of a photoelectric conversion element of an image sensing pixel.Type: ApplicationFiled: December 2, 2020Publication date: March 2, 2023Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Pooria MOSTAFALU, Giri MEHTA, Frederick Brady, Ping Wah WONG
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Publication number: 20220415952Abstract: An imaging device includes a first pixel including a first photoelectric conversion region disposed in a first substrate and that converts incident light into first electric charges, and a first readout circuit including a first converter that converts the first electric charges into a first logarithmic voltage signal. The first converter includes a first transistor coupled to the first photoelectric conversion region and a second transistor coupled to the first transistor. The imaging device includes a wiring layer on the first substrate and includes a first level of wirings arranged in a first arrangement overlapping the first photoelectric conversion region and in a second arrangement overlapping the first and second transistors, the second arrangement being different than the first arrangement.Type: ApplicationFiled: December 2, 2020Publication date: December 29, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Sungin HWANG, Pooria MOSTAFALU, Frederick Brady
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Patent number: 11484262Abstract: A composite thread includes first and second segments joined to each other. The first segment comprises a functional segment that interacts with an environment of the thread. The second segment communicates information between the first segment and a point external to said composite thread.Type: GrantFiled: July 29, 2016Date of Patent: November 1, 2022Assignee: Trustees of Tufts CollegeInventors: Sameer Sonkusale, Pooria Mostafalu
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Publication number: 20220337769Abstract: An imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. The isolation structure may be in the form of a full thickness dielectric trench isolation structure.Type: ApplicationFiled: September 7, 2020Publication date: October 20, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Pooria MOSTAFALU, Frederick BRADY
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Publication number: 20220301521Abstract: An imaging device includes a first pixel. The first pixel includes a first photoelectric conversion region disposed in a first substrate and that converts incident light into first electric charges. The first pixel includes a first readout circuit including a first converter that converts the first electric charges into a first logarithmic voltage signal. The imaging device includes at least one bonding pad on the first substrate and in electrical contact with the first converter. The at least one bonding pad overlaps at least part of the first pixel.Type: ApplicationFiled: August 7, 2020Publication date: September 22, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Pooria MOSTAFALU, Sungin HWANG, Frederick BRADY
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Publication number: 20220293643Abstract: An imaging device includes a plurality of unit pixels disposed into pixel groups that are separated from one another by isolation structures. Unit pixels within each pixel group are separated from one another by isolation structures and share circuit elements. The isolation structures between pixel groups are full thickness isolation structures. At least a portion of the isolation structures between unit pixels within a pixel group are deep trench isolation structures.Type: ApplicationFiled: August 7, 2020Publication date: September 15, 2022Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Frederick BRADY, Pooria MOSTAFALU, Hongyi MI
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Publication number: 20220273926Abstract: The disclosure relates to improved wound healing compositions, methods, and systems. Embodiments of the disclosure provide microneedle arrays and devices for treating wounds and bacterial infections. Also provided are methods of using microneedle arrays and devices to passively or actively deliver various therapeutic agents to target tissues including acute and chronic wounds.Type: ApplicationFiled: July 8, 2020Publication date: September 1, 2022Inventors: Ali TAMAYOL, Hossein DERAKHSHANDEH, Pooria MOSTAFALU
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Publication number: 20220150427Abstract: An imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. The isolation structure may be in the form of a full thickness dielectric trench isolation structure.Type: ApplicationFiled: January 24, 2022Publication date: May 12, 2022Applicant: Sony Semiconductor Solutions CorporationInventors: Pooria Mostafalu, Frederick Brady
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Patent number: 11330211Abstract: An imaging device with a plurality of image sensing pixels and a plurality of event detection pixels is provided. Each image sensing pixel includes a photoelectric conversion element and an imaging signal generation readout circuit. The image sensing readout circuit can be shared by a plurality of photoelectric conversion elements. Each event detection pixel includes a photoelectric conversion element and an event detection readout circuit. The event detection readout circuit can be shared by a plurality of photoelectric conversion elements. In addition, the photoelectric conversion element of an event detection pixel can be selectively connected to a shared imaging signal generation readout circuit. The number of image sensing pixels is greater than the number of event detection pixels. In addition, the area of a photoelectric conversion element of an event detection pixel can be greater than the area of a photoelectric conversion element of an image sensing pixel.Type: GrantFiled: December 2, 2019Date of Patent: May 10, 2022Assignee: Sony Semiconductor Solutions CorporationInventors: Giri Mehta, Pooria Mostafalu, Frederick Brady, Ping Wah Wong
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Patent number: 11240449Abstract: An imaging device includes a plurality of unit pixels or pixels, with each pixel separated from every other unit pixel by an isolation structure. Each unit pixel includes a photoelectric conversion unit, a pixel imaging signal readout circuit, and an address event detection readout circuit. A first transfer transistor selectively connects the photoelectric conversion unit to the pixel imaging signal readout circuit, and a second transfer transistor selectively connects the photoelectric conversion unit to the address event detection readout circuit. The photoelectric conversion unit, the pixel imaging signal readout circuit, the address event detection readout circuit, and the first and second transfer transistors for a given pixel are located within a pixel area defined by the isolation structure. The isolation structure may be in the form of a full thickness dielectric trench isolation structure.Type: GrantFiled: September 18, 2019Date of Patent: February 1, 2022Assignee: Sony Semiconductor Solutions CorporationInventors: Pooria Mostafalu, Frederick Brady
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Patent number: 11195869Abstract: An imaging device includes a plurality of unit pixels disposed into pixel groups that are separated from one another by isolation structures. Unit pixels within each pixel group are separated from one another by isolation structures and share circuit elements. The isolation structures between pixel groups are full thickness isolation structures. At least a portion of the isolation structures between unit pixels within a pixel group are deep trench isolation structures.Type: GrantFiled: September 5, 2019Date of Patent: December 7, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Hongyi Mi, Frederick Brady, Pooria Mostafalu
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Patent number: 11095843Abstract: An imaging device includes a first pixel including a first photoelectric conversion region disposed in a first substrate and that converts incident light into first electric charges, and a first readout circuit including a first converter that converts the first electric charges into a first logarithmic voltage signal. The first converter includes a first transistor coupled to the first photoelectric conversion region and a second transistor coupled to the first transistor. The imaging device includes a wiring layer on the first substrate and includes a first level of wirings arranged in a first arrangement overlapping the first photoelectric conversion region and in a second arrangement overlapping the first and second transistors, the second arrangement being different than the first arrangement.Type: GrantFiled: December 2, 2019Date of Patent: August 17, 2021Assignee: Sony Semiconductor Solutions CorporationInventors: Pooria Mostafalu, Sungin Hwang, Frederick Brady
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Patent number: 11062679Abstract: An imaging device includes a first pixel. The first pixel includes a first photoelectric conversion region disposed in a first substrate and that converts incident light into first electric charges. The first pixel includes a first readout circuit including a first converter that converts the first electric charges into a first logarithmic voltage signal. The imaging device includes at least one bonding pad on the first substrate and in electrical contact with the first converter. The at least one bonding pad overlaps at least part of the first pixel.Type: GrantFiled: September 6, 2019Date of Patent: July 13, 2021Assignee: Sony Semiconductor Solutions CorporationsInventors: Pooria Mostafalu, Sungin Hwang, Frederick Brady