Abstract: This invention relates to process sequence by atomic layer chemical vapor processing that includes thin film deposition for diffusion barriers in the vias, trenches or contact plug-holes followed by gap fill with ALD/CVD process and subsequent removal of the blanket film on the top by Atomic Layer Processing/Chemical Vapor Processing. The processes can be carried out in separate chambers or may be combined into one or more chambers. The apparatus employed in these processing steps allows the practitioner to rapidly complete process sequences of barrier deposition, gap fill and top layer planarization. In case of copper metallization scheme, ALD gap fill can be employed to replace electrochemical deposition of copper. Atomic layer removal of copper and other blanket films by gas phase reactions can replace the chemical-mechanical-polishing of the blanket films.

Abstract: The present invention provides an apparatus and method for radical-assisted monolayer processing in a reactor with linear injectors arranged in diametrical direction of the substrate and injecting reactive gases or radicals sequentially onto the treated substrate surface with a relative motion between the injectors and the substrate. In the first step, a first chemical precursor is injected from the first injector; in the second step carrier gas is pulsed to sweep the surface. In the third step, second precursor, preferably a radical is injected on the substrate to affect rapid chemical reaction with the chemisorbed monolayer of the first chemical precursor. Finally in the fourth step, only radicals are injected on the surface to complete the reaction cycle and to sweep the reaction by-products and to prepare the surface. During each gas injection step the substrate rotates at least half the rotation.

Abstract: The present invention provides an apparatus and method for downstream reactive radical generation from non-condensable gas plasma and its downstream interaction with a variety of chemical precursors for thin film processing. Plasma may be generated by either RF or microwave power source or a high energy UV light source may be suitably employed to ionize the non-condensable gas. Highly energetic ions and electrons are filtered from the plasma of a non-condensable gas through an in-line ion filter. The resultant radical rich flow is mixed with downstream flow of a reactive gas that may be condensable. The upstream non-condensable gas flow, plasma power and the downstream reactive gas flow all can be pulsed synchronously or all maintained constant or some of these factors may be varied in magnitude with respect to time. Thus, a variety of combinations of operational parameters of the radical generator can be practiced.