Patents by Inventor Pramod Subramonium
Pramod Subramonium has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240136153Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.Type: ApplicationFiled: October 23, 2023Publication date: April 25, 2024Inventors: Matthew Scott Weimer, Pramod Subramonium, Ragesh Puthenkovilakam, Rujun Bai, David French
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Patent number: 11837441Abstract: Methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate include pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.Type: GrantFiled: May 28, 2020Date of Patent: December 5, 2023Assignee: Lam Research CorporationInventors: Matthew Scott Weimer, Pramod Subramonium, Ragesh Puthenkovilakam, Rujun Bai, David French
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Publication number: 20230366094Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.Type: ApplicationFiled: July 13, 2023Publication date: November 16, 2023Inventors: Jason Dirk Haverkamp, Pramod Subramonium, Joseph L. Womack, Dong Niu, Keith Fox, John B. Alexy, Patrick G. Breiling, Jennifer L. Petraglia, Mandyam A. Sriram, George Andrew Antonelli, Bart J. van Schravendijk
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Patent number: 11746420Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, an apparatus configured to deposit a plurality of film layers having different compositions on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a process station reactant feed fluidically coupled to a gas inlet of the process station, and fluidically coupled to an inert gas delivery line, a first reactant mixture gas delivery line and a second reactant mixture gas delivery line such that the first reactant gas mixture and the second reactant gas mixture can be introduced sequentially into the process station reactant feed, and supplied via a shared path to the process station.Type: GrantFiled: December 28, 2018Date of Patent: September 5, 2023Assignee: Novellus Systems, Inc.Inventors: Pramod Subramonium, Joseph L. Womack, Dong Niu, Keith Fox
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Publication number: 20220216037Abstract: Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate.Type: ApplicationFiled: May 28, 2020Publication date: July 7, 2022Applicant: Lam Research CorporationInventors: Matthew Scott Weimer, Pramod Subramonium, Ragesh Puthenkovilakam, Rujun Bai, David French
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Publication number: 20210320004Abstract: A method for depositing a nitride layer over an oxide layer to form an oxide-nitride stack is provided. The method includes supplying an inert gas to a plasma enhanced chemical vapor deposition (PECVD) reactor that supports a substrate having said oxide layer. Then, providing power to an electrode of the PECVD reactor, where the power is configured to strike a plasma. Then, flowing reactant gases into the PECVD reactor. The reactant gases include a first percentage by volume of ammonia (NH3), a second percentage by volume of nitrogen (N2), a third percentage by volume of silane (SiH4) and a fourth percentage by volume of an oxidizer. The fourth percentage by volume of said oxidizer is at least 0.5 percent by volume and less than about 8 percent by volume. Then, continuing to flow the reactant gases into the PECVD reactor until the nitride layer is determined to achieve a target thickness over the oxide layer.Type: ApplicationFiled: October 8, 2019Publication date: October 14, 2021Inventors: Pramod Subramonium, Nagraj Shankar, Malay Milan Samantaray, Katsunori Yoshizawa, Bart J. VanSchravendijk
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Patent number: 10541117Abstract: Heights of carrier ring supports are increased at a side of a wafer that is located closer to a spindle of a plasma chamber. The heights are increased relative to a height of a carrier ring support that is located closer to side walls of the plasma chamber. The increase in the height results in an increase in thickness of a thin film deposited on the wafer to further achieve uniformity in thickness of the thin film across a top surface of the wafer.Type: GrantFiled: November 10, 2015Date of Patent: January 21, 2020Assignee: Lam Research CorporationInventors: Shankar Swaminathan, Pramod Subramonium, Frank L. Pasquale, Jeongseok Ha, Chloe Baldasseroni
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Publication number: 20190376186Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.Type: ApplicationFiled: December 28, 2018Publication date: December 12, 2019Inventors: Jason Dirk Haverkamp, Pramod Subramonium, Joseph L. Womack, Dong Niu, Keith Fox, John B. Alexy, Patrick G. Breiling, Jennifer Leigh Petraglia, Mandyam Ammanjee Sriram, George Andrew Antonelli, Bart J. van Schravendijk
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Patent number: 10475627Abstract: A carrier ring configured to support a substrate during transport to or from a pedestal of a process tool and surrounding the substrate during processing is defined by, an inner annular portion having a first thickness, the inner annular portion defined to be adjacent a substrate support region of the pedestal; a middle annular portion surrounding the inner annular portion, the middle annular portion having a second thickness greater than the first thickness, such that a transition from a top surface of the inner annular portion to a top surface of the middle annular portion defines a first step; an outer annular portion surrounding the middle annular portion, the outer annular portion having a third thickness greater than the second thickness, such that a transition from the top surface of the middle annular portion to a top surface of the outer annular portion defines a second step.Type: GrantFiled: March 25, 2016Date of Patent: November 12, 2019Assignee: Lam Research CorporationInventors: Chengzhu Qi, Yukinori Sakiyama, Bin Luo, Douglas Keil, Pramod Subramonium, Chunhai Ji, Joseph Lindsey Womack
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Patent number: 10214816Abstract: An apparatus for depositing film stacks in-situ (i.e., without a vacuum break or air exposure) are described. In one example, a plasma-enhanced chemical vapor deposition apparatus configured to deposit a plurality of film layers on a substrate without exposing the substrate to a vacuum break between film deposition phases, is provided. The apparatus includes a process chamber, a plasma source and a controller configured to control the plasma source to generate reactant radicals using a particular reactant gas mixture during the particular deposition phase, and sustain the plasma during a transition from the particular reactant gas mixture supplied during the particular deposition phase to a different reactant gas mixture supplied during a different deposition phase.Type: GrantFiled: April 25, 2014Date of Patent: February 26, 2019Assignee: Novellus Systems, Inc.Inventors: Jason Dirk Haverkamp, Pramod Subramonium, Joseph L. Womack, Dong Niu, Keith Fox, John B. Alexy, Patrick G. Breiling, Jennifer L. Petraglia, Mandyam A. Sriram, George Andrew Antonelli, Bart J. van Schravendijk
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Patent number: 10043655Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: GrantFiled: February 7, 2017Date of Patent: August 7, 2018Assignee: Novellus Systems, Inc.Inventors: Shankar Swaminathan, Jon Henri, Dennis Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi Kattige, Bart van Schravendijk, Andrew J. McKerrow
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Publication number: 20170278681Abstract: A carrier ring configured to support a substrate during transport to or from a pedestal of a process tool and surrounding the substrate during processing is defined by, an inner annular portion having a first thickness, the inner annular portion defined to be adjacent a substrate support region of the pedestal; a middle annular portion surrounding the inner annular portion, the middle annular portion having a second thickness greater than the first thickness, such that a transition from a top surface of the inner annular portion to a top surface of the middle annular portion defines a first step; an outer annular portion surrounding the middle annular portion, the outer annular portion having a third thickness greater than the second thickness, such that a transition from the top surface of the middle annular portion to a top surface of the outer annular portion defines a second step.Type: ApplicationFiled: March 25, 2016Publication date: September 28, 2017Inventors: Chengzhu Qi, Yukinori Sakiyama, Bin Luo, Douglas Keil, Pramod Subramonium, Chunhai Ji, Joseph Lindsey Womack
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Publication number: 20170148628Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: ApplicationFiled: February 7, 2017Publication date: May 25, 2017Inventors: Shankar Swaminathan, Jon Henri, Dennis Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi Kattige, Bart van Schravendijk, Andrew J. McKerrow
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Publication number: 20170121819Abstract: Heights of carrier ring supports are increased at a side of a wafer that is located closer to a spindle of a plasma chamber. The heights are increased relative to a height of a carrier ring support that is located closer to side walls of the plasma chamber. The increase in the height results in an increase in thickness of a thin film deposited on the wafer to further achieve uniformity in thickness of the thin film across a top surface of the wafer.Type: ApplicationFiled: November 10, 2015Publication date: May 4, 2017Inventors: Shankar Swaminathan, Pramod Subramonium, Frank L. Pasquale, Jeongseok Ha, Chloe Baldasseroni
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Patent number: 9633896Abstract: Dielectric AlO, AlOC, AlON and AlOCN films characterized by a dielectric constant (k) of less than about 10 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers and/or diffusion barriers. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) in an iALD process chamber and the aluminum-containing compound is allowed to adsorb onto the surface of the substrate. This step is performed in an absence of plasma. Next, the unadsorbed aluminum-containing compound is removed from the process chamber, and the substrate is treated with a process gas containing CO2 or N2O, and an inert gas in a plasma to form an AlO, AlOC, or AlON layer. These steps are then repeated.Type: GrantFiled: November 23, 2015Date of Patent: April 25, 2017Assignee: Lam Research CorporationInventors: Daniel Damjanovic, Pramod Subramonium, Nagraj Shankar
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Publication number: 20170103914Abstract: Dielectric AlO, AlOC, AlON and AlOCN films characterized by a dielectric constant (k) of less than about 10 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers and/or diffusion barriers. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) in an iALD process chamber and the aluminum-containing compound is allowed to adsorb onto the surface of the substrate. This step is performed in an absence of plasma. Next, the unadsorbed aluminum-containing compound is removed from the process chamber, and the substrate is treated with a process gas containing CO2 or N2O, and an inert gas in a plasma to form an AlO, AlOC, or AlON layer. These steps are then repeated.Type: ApplicationFiled: November 23, 2015Publication date: April 13, 2017Inventors: Daniel Damjanovic, Pramod Subramonium, Nagraj Shankar
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Patent number: 9589799Abstract: Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio frequency plasma source. According to various embodiments, the low frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off. The resulting deposited highly selective ashable hard mask may have decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask.Type: GrantFiled: April 8, 2014Date of Patent: March 7, 2017Assignee: Lam Research CorporationInventors: Sirish K. Reddy, Chunhai Ji, Xinyi Chen, Pramod Subramonium
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Patent number: 9570274Abstract: Methods of depositing a film on a substrate surface include surface mediated reactions in which a film is grown over one or more cycles of reactant adsorption and reaction. In one aspect, the method is characterized by intermittent delivery of dopant species to the film between the cycles of adsorption and reaction.Type: GrantFiled: January 28, 2015Date of Patent: February 14, 2017Assignee: Novellus Systems, Inc.Inventors: Shankar Swaminathan, Jon Henri, Dennis Hausmann, Pramod Subramonium, Mandyam Sriram, Vishwanathan Rangarajan, Kirthi Kattige, Bart van Schravendijk, Andrew J. McKerrow
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Patent number: 9399228Abstract: A substrate processing system includes a showerhead that comprises a head portion and a stem portion and that delivers precursor gas to a processing chamber. A baffle includes a base portion having an outer diameter that is greater than an outer diameter of the head portion of the showerhead, that comprises a dielectric material and that is arranged between the head portion of the showerhead and an upper surface of the processing chamber.Type: GrantFiled: February 6, 2013Date of Patent: July 26, 2016Assignee: NOVELLUS SYSTEMS, INC.Inventors: Patrick Breiling, Kevin Gerber, Jennifer O'Loughlin, Nagraj Shankar, Pramod Subramonium
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Patent number: 9240320Abstract: Provided are plasma enhanced chemical vapor deposition methods of depositing smooth and conformal ashable hard mask films on substrates containing raised or recessed features. The methods involve using precursors having relatively high C:H ratios, such as acetylene (C:H ratio of 1), and plasmas having low ion energies and fluxes. According to various embodiments, the methods involve depositing smooth ashable hard mask films using high frequency radio frequency-generated plasmas with no low frequency component and/or relatively high pressures. Also provided are methods of depositing ashable hard mask films having good selectivity and improved side wall coverage and roughness. The methods involve depositing a first ashable hard mask film on a substrate having a feature using a process optimized for selectivity and/or optical properties and then depositing a smoothing layer on the first ashable hard mask film using an HF-only process.Type: GrantFiled: April 3, 2013Date of Patent: January 19, 2016Assignee: Novellus Systems, Inc.Inventors: Pramod Subramonium, Zhiyuan Fang, Shawn Hancock, Mike Pierce, Jon Henri