Patents by Inventor Pranav Anbalagan
Pranav Anbalagan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170236961Abstract: Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, back surface field formation, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.Type: ApplicationFiled: November 28, 2016Publication date: August 17, 2017Inventors: Virendra V. Rana, Pranav Anbalagan, Mehrdad M. Moslehi
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Publication number: 20170236969Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.Type: ApplicationFiled: September 26, 2016Publication date: August 17, 2017Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan
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Publication number: 20170133546Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to crystalline semiconductor, including crystalline silicon.Type: ApplicationFiled: August 15, 2016Publication date: May 11, 2017Inventors: Virendra V. Rana, JianJun Liang, Pranav Anbalagan, Mehrdad M. Moslehi
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Patent number: 9583651Abstract: Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a crystalline silicon solar cell substrate is textured with a pulsed laser beam. The textured backside surface of the crystalline silicon solar cell substrate is then annealed to remove damage from the laser texturization process.Type: GrantFiled: December 26, 2012Date of Patent: February 28, 2017Assignee: Solexel, Inc.Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Solene Coutant, Heather Deshazer, Pranav Anbalagan, Benjamin Rattle
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Publication number: 20170005206Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.Type: ApplicationFiled: January 8, 2016Publication date: January 5, 2017Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan, Vivek Saraswat
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Patent number: 9508886Abstract: A method for making a crystalline silicon solar cell substrate is provided. A doped dielectric layer is deposited over the backside surface of a crystalline silicon substrate, the doped dielectric layer having a polarity opposite the polarity of the crystalline silicon substrate. Portions of the backside surface of the crystalline substrate are exposed through the doped dielectric layer. An overlayer is deposited over the doped dielectric layer and the exposed portions of the backside surface of the crystalline silicon substrate. Pulsed laser ablation of the overlayer is performed with a flat top laser beam on the silicon substrate to form continuous base openings nested within the exposed portions of the backside surface of the crystalline silicon substrate, the flat top laser beam having a beam intensity profile flatter as compared to a Gaussian beam intensity profile and having a rectangular beam cross section.Type: GrantFiled: October 11, 2011Date of Patent: November 29, 2016Assignee: Solexel, Inc.Inventors: Virendra V. Rana, Pranav Anbalagan, Mehrdad M. Moslehi
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Patent number: 9455362Abstract: Methods for laser irradiation aluminum doping for monocrystalline silicon substrates are provided. According to one aspect of the disclosed subject matter, aluminum metal contacts are formed directly on a surface of a monocrystalline silicon substrate. The aluminum metal contact is selectively heated via laser irradiation, thereby causing the aluminum and a portion of the monocrystalline silicon substrate in proximity to the aluminum to reach a temperature sufficient to allow at least a portion of the silicon to dissolve in the aluminum. The aluminum and the portion of the monocrystalline silicon substrate in proximity to the aluminum is allowed to cool, thereby forming an aluminum-rich doped silicon layer on the monocrystalline silicon substrate.Type: GrantFiled: December 30, 2011Date of Patent: September 27, 2016Assignee: Solexel, Inc.Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan
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Patent number: 9419165Abstract: A method for making a back contact solar cell. Base isolation regions are formed in a crystalline silicon back contact solar cell substrate having a substrate thickness in the range of approximately 1 micron to 100 microns. Pulsed laser ablation of a substance on the crystalline silicon back contact solar cell substrate is performed to form base openings, wherein the substance is at least one of silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, or silicon carbide. Emitter regions are selectively doped and base regions are selectively doped. Contact openings are formed for the selectively doped base regions and the selectively doped emitter regions. Metallization is formed on the selectively doped base regions and the selectively doped emitter regions.Type: GrantFiled: March 18, 2013Date of Patent: August 16, 2016Assignee: Solexel, Inc.Inventors: Virendra V. Rana, JianJun Liang, Pranav Anbalagan, Mehrdad M. Moslehi
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Publication number: 20160013335Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepreg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepreg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepreg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepreg backplane.Type: ApplicationFiled: February 5, 2015Publication date: January 14, 2016Inventors: Mehrdad M. Moslehi, Karl-Josef Kramer, Sean M. Seutter, Pawan Kapur, Thom Stalcup, David Xuan-Qi Wang, George D. Kamian, Kamran Manteghi, Yen-Sheng Su, Pranav Anbalagan, Virendra V. Rana, Anthony Calcaterra, Gerry Olsen, Wojciech Worwag
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Patent number: 9236510Abstract: A method for making an ablated electrically insulating layer on a semiconductor substrate. A first relatively thin layer of at least an undoped glass or undoped oxide is deposited on a surface of a semiconductor substrate having n-type doping. A first relatively thin semiconductor layer having at least one substance chosen from amorphous semiconductor, nanocrystalline semiconductor, microcrystalline semiconductor, or polycrystalline semiconductor is deposited on the relatively thin layer of at least an undoped glass or undoped oxide. At least a layer of borosilicate glass or borosilicate/undoped glass stack is deposited on the relatively thin semiconductor layer. The at least borosilicate glass or borosilicate/undoped glass stack is selectively ablated with a pulsed laser, and the relatively thin semiconductor layer substantially protects the semiconductor substrate from the pulsed laser.Type: GrantFiled: December 20, 2013Date of Patent: January 12, 2016Assignee: Solexel, Inc.Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan, Vivek Saraswat
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Publication number: 20150140721Abstract: Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.Type: ApplicationFiled: December 20, 2013Publication date: May 21, 2015Applicant: SOLEXEL, INC.Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan, Vivek Saraswat
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Publication number: 20150129017Abstract: A lamination stack for etching solar cells is provided. At least two solar cell wafers are attached to corresponding backplane sheets which are larger than the solar cell wafers. Release layers larger than the solar cells and smaller than the backplane sheets are positioned on the backplane sheets on the opposite side of the attached solar cell wafers. The backplane sheets are bonded together along the exposed peripheral boundary formed by the release layers.Type: ApplicationFiled: July 8, 2014Publication date: May 14, 2015Inventors: David Dutton, Pranav Anbalagan, Karl-Josef Kramer, Mehrdad M. Moslehi
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Publication number: 20140158193Abstract: Fabrication methods and structures relating to back contact solar cells having patterned emitter and non-nested base regions are provided.Type: ApplicationFiled: May 29, 2013Publication date: June 12, 2014Inventors: Anande Desphande, Pawan Kapur, Heather Deshazer, Mehrdad M. Moslehi, Virendra V. Rana, Sean M. Seutter, Pranav Anbalagan, Benjamin E. Rattle, Solene Coutant, Swaroop Kommera
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Patent number: 8637340Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.Type: GrantFiled: December 30, 2011Date of Patent: January 28, 2014Assignee: Solexel, Inc.Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan, Vivek Saraswat
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Publication number: 20130130430Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction emitter and homo-junction emitter solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.Type: ApplicationFiled: May 21, 2012Publication date: May 23, 2013Applicant: SOLEXEL, INC.Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan, Heather Deshazer, Vivek Saraswat, Pawan Kapur
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Patent number: 8399331Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.Type: GrantFiled: May 27, 2011Date of Patent: March 19, 2013Assignee: SolexelInventors: Mehrdad M. Moslehi, Virendra V. Rana, JianJun Liang, Pranav Anbalagan
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Publication number: 20120178203Abstract: Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.Type: ApplicationFiled: December 30, 2011Publication date: July 12, 2012Applicant: SOLEXEL, INC.Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan
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Publication number: 20120171804Abstract: Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional.Type: ApplicationFiled: December 30, 2011Publication date: July 5, 2012Applicant: SOLEXEL, INC.Inventors: Mehrdad M. Moslehi, Virendra V. Rana, Pranav Anbalagan, Vivek Saraswat
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Publication number: 20120122272Abstract: Flat top beam laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, back surface field formation, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.Type: ApplicationFiled: October 11, 2011Publication date: May 17, 2012Applicant: SOLEXEL, INC.Inventors: Virendra V. Rana, Pranav Anbalagan, Mehrdad M. Moslehi
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Publication number: 20120028399Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.Type: ApplicationFiled: May 27, 2011Publication date: February 2, 2012Applicant: SOLEXEL, INC.Inventors: Mehrdad M. Moslehi, Virendra V. Rana, JianJun Liang, Pranav Anbalagan