Abstract: A non-transitory machine-readable storage medium is disclosed, which stores a program for modeling a many particle system. When executed on a processing system, the program causes the processing system to (1) determine a compensation function that, when applied to a plurality of interaction equations, compensates for errors introduced by an approximation included in at least one of the plurality of interaction equations, (2) determine an uncompensated solution of the many particle system by solving the many particle system without the plurality of interaction equations, (3) calculate a plurality of observables in the many particle system by solving the many particle system with the plurality of interaction equations by a first iteration, and (4) model the many particle system based on the plurality of observables.

Abstract: A tunnel field-effect transistor (TFET) includes a fin, an insulator layer, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or is more lightly doped than the first region and the second region. At least the interior region of the fin formed as a type II superlattice, wherein materials of the superlattice alternate vertically. The insulator layer is formed around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the at least one gate are configured to generate an inhomogeneous electrostatic potential within the interior region.

Abstract: A non-transitory machine readable storage medium having a machine readable program stored therein, wherein the machine readable program, when executed on a processing system, causes the processing system to perform a method of modeling a many particle system, wherein the method includes determining a compensation function, wherein the compensation function compensates errors introduced by an approximation of at least one of a plurality of interaction equations applied on the plurality of interaction equations, wherein the plurality of interaction equations includes the approximation. The method additionally includes solving at least a system of the many particle system without the plurality of interaction equations to extract an uncompensated solution of the many particle system.

Abstract: A tunnel field-effect transistor (TFET) includes a fin, an insulator layer, and at least one gate. The fin has a doped first region, a doped second region, and an interior region between the first region and the second region. The interior region is undoped or is more lightly doped than the first region and the second region. At least the interior region of the fin formed as a type II superlattice, wherein materials of the superlattice alternate vertically. The insulator layer is formed around the interior region. The gate is formed on at least a portion of the insulator region. The insulator layer and the at least one gate are configured to generate an inhomogeneous electrostatic potential within the interior region.

Abstract: An amplifier is described which includes a first loop including a first amplifier stage having an offset voltage associated therewith. An output stage includes two switching devices in a bridge configuration configured to be coupled between a supply voltage and ground. An output of the bridge configuration is configured to be coupled to a load. The first loop is characterized by a first gain. A decoupling capacitor is configured to be coupled to the load. A second loop which includes the first amplifier stage is configured to charge the decoupling capacitor to a first voltage generated with reference to the offset voltage before operation of the switching devices is enabled. The second loop is characterized by a second gain. The first and second gains are substantially the same such that when operation of the switching devices is enabled a second voltage at the output of the half-bridge configuration is substantially the same as the first voltage.