Abstract: A method of preparing a surface for deposition of a thin film thereon, wherein the surface including a plurality of protrusions extending therefrom and having shadowed regions, includes locally treating at least one of the protrusions.

Abstract: A first device that may include a short tolerant structure, and methods for fabricating embodiments of the first device, are provided. A first device may include a substrate and a plurality of OLED circuit elements disposed on the substrate. Each OLED circuit element may include a fuse that is adapted to open an electrical connection in response to an electrical short in the pixel. Each OLED circuit element may comprise a pixel that may include a first electrode, a second electrode, and an organic electroluminescent (EL) material disposed between the first and the second electrodes. Each of the OLED circuit elements may not be electrically connected in series with any other of the OLED circuit elements.

Abstract: A first device and methods for manufacturing the first device are provided. The first device may comprise a flexible substrate and at least one organic light emitting device (OLED) disposed over the flexible substrate. The first device may have a flexural rigidity between 10?1 Nm and 10?6 Nm, and the ratio of the critical strain energy release rate to the material density factor for the first device may be greater than 0.05 J m/Kg.

Abstract: A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

Abstract: A first device may be provided in some embodiments. The first device may comprise a substrate, a first emissive region, and a second emissive region, where the first emissive region and the second emissive region may comprise a contiguous area. The first device may further comprise a first electrode disposed over the substrate that extends across the first and the second emissive regions, and an organic layer disposed over the substrate that extends across the first and second emissive regions, where the organic layer comprises the same emissive material across the first and the second emissive regions. The first device may further include a second electrode disposed over the substrate that extends across the first and second emissive regions, where the second electrode includes a patterned layer of conductive material that is disposed in the first emissive region and that is not disposed in the second emissive region.

Abstract: A device includes a first electrode, an organic layer disposed over the first electrode and a second electrode disposed over the organic layer. The second electrode includes a first conductive layer, a first separation layer disposed over the first conductive layer, and a second conductive layer disposed over the first separation layer, wherein the first separation layer is not a continuous layer and the first and second conductive layers are bridged where the first separation layer is not continuous. The first separation layer has an extinction coefficient that is at least 10% different from the extinction coefficient of the first conductive layer at wavelength 500 nm, or an index of refraction that is at least 10% different from the index of refraction of the first conductive layer at wavelength 500 nm.

Abstract: A first product may be provided that comprises a substrate having a first surface, a first side, and a first edge where the first surface meets the first side; and a device disposed over the substrate, the device having a second side, where at least a first portion of the second side is disposed within 3 mm from the first edge of the substrate. The first product may further comprise a first barrier film that covers at least a portion of the first edge of the substrate, at least a portion of the first side of the substrate, and at least the first portion of the second side of the device.

Abstract: A flexible OLED is provided on a flexible substrate. The flexible substrate has at least cut region. The substrate is expandable due to the separation of the flexible substrate at the cut region that is accommodated by bending of the flexible substrate. The substrate on which the flexible OLED is deposited on may be expanded without plastic deformation.

Abstract: Thin-film transistors are made using an organosilicate glass (OSG) as an insulator material. The organosilicate glasses may be SiO2-silicone hybrid materials deposited by plasma-enhanced chemical vapor deposition from siloxanes and oxygen. These hybrid materials may be employed as the gate dielectric, as a subbing layer, and/or as a back channel passivating layer. The transistors may be made in any conventional TFT geometry.

Abstract: A first device and methods for manufacturing the first device are provided. The first device may comprise a flexible substrate and at least one organic light emitting device (OLED) disposed over the flexible substrate. The first device may have a flexural rigidity between 10?1 Nm and 10?6 Nm, and the ratio of the critical strain energy release rate to the material density factor for the first device may be greater than 0.05 J m/Kg.

Abstract: Devices comprising multiple flexible substrates bearing OLEDs are provided. The flexible substrates are interconnected, and the properties of the substrates and the interconnections provide the shape of the device.

Abstract: Novel three dimensional OLEDs are provided. The OLEDs have two configurations, and are self supporting in the three dimensional configuration without the need for any external supports.

Abstract: A permeation barrier film structure for organic electronic devices includes one or more bilayers having a hybrid permeation barrier composition. Each of the one or more bilayers includes a first region having a first composition corresponding to a first CF4—O2 Plasma Reactive Ion Etch Rate and a second region having a second composition corresponding to a second CF4—O2 Plasma Reactive Ion Etch Rate, wherein the second Etch Rate is greater than the first Etch Rate by a factor greater than 1.2 and the hybrid permeation barrier film is a homogeneous mixture of a polymeric material and a non-polymeric material, wherein the mixture is created from a single precursor material.

Abstract: A semi-rigid electronic device is disclosed that includes a flexible panel and a housing. The housing may have a physical dimension L, such as length, height, or a diagonal. The minimum bending device radius of the device along the dimension L may be L/pi when held at an edge. The bending radius increases the more rigid the device. The housing, electronic components, and display may each contribute to the flexibility of the overall device. The housing and/or the flexible panel may also include one or more ribs to constrain movement of the semi-rigid device.

Abstract: A method of forming microelectronic systems on a flexible substrate includes depositing (typically sequentially) on a first side of the flexible substrate at least one organic thin film layer, at least one electrode and at least one thin film encapsulation layer over the at least one organic thin film layer and the at least one electrode, wherein depositing the at least one organic thin film layer, depositing the at least one electrode and depositing the at least one thin film encapsulation layer each occur under vacuum and wherein no physical contact of the at least one organic thin film layer or the at least one electrode with another solid material occurs prior to depositing the at least one thin film encapsulation layer.

Abstract: A method of forming microelectronic systems on a flexible substrate includes depositing a plurality of layers on one side of the flexible substrate. Each of the plurality of layers is deposited from one of a plurality of sources. A vertical projection of a perimeter of each one of the plurality of sources does not intersect the flexible substrate. The flexible substrate is in motion during the depositing the plurality of layers via a roll to roll feed and retrieval system.

Abstract: A first device and methods for manufacturing the first device are provided. The first device may comprise a flexible substrate and at least one organic light emitting device (OLED) disposed over the flexible substrate. The first device may have a flexural rigidity between 10?1 Nm and 10?6 Nm, and the ratio of the critical strain energy release rate to the material density factor for the first device may be greater than 0.05 J m/Kg.

Abstract: A semi-rigid electronic device is disclosed that includes a flexible panel and a housing. The housing may have a physical dimension L, such as length, height, or a diagonal. The minimum bending device radius of the device along the dimension L may be L/pi when held at an edge. The bending radius increases the more rigid the device. The housing, electronic components, and display may each contribute to the flexibility of the overall device. The housing and/or the flexible panel may also include one or more ribs to constrain movement of the semi-rigid device.

Abstract: Methods for forming a coating over a surface are disclosed. A method includes directing a first source of barrier film material toward a substrate in a first direction at an angle ? relative to the substrate, wherein ? is greater than about 0° and less than about 85°. Additionally, a method of depositing a barrier film over a substrate includes directing a plurality of N sources of barrier film material toward a substrate, each source being directed at an angle ?N relative to the substrate, wherein for each ?N, ? is greater than about 0° and less than about 180°. For at least a first of the ?N, ?N is greater than about 0° and less than about 85°, and for at least a second of the ?N, ?N is greater than about 95° and less than about 180°.

Abstract: A method for protecting an electronic device comprising an organic device body. The method involves the use of a hybrid layer deposited by chemical vapor deposition. The hybrid layer comprises a mixture of a polymeric material and a non-polymeric material, wherein the weight ratio of polymeric to non-polymeric material is in the range of 95:5 to 5:95, and wherein the polymeric material and the non-polymeric material are created from the same source of precursor material. Also disclosed are techniques for impeding the lateral diffusion of environmental contaminants.