Abstract: A read technique for both SLC (single level cell) and MLC (multi-level cell) cross-point memory can mitigate drift-related errors with minimal or no drift tracking. In one example, a read at a higher magnitude voltage is applied first, which causes the drift for cells in a lower threshold voltage state to be reset. In one example, the read at the first voltage can be a full float read to minimize disturb. A second read can then be performed at a lower voltage without the need to adjust the read voltage due to drift.

Abstract: Systems, apparatuses and methods may provide for technology that determines a write-to-write delay with respect to a memory cell, wherein one or more neighboring cells are adjacent to the memory cell and controls a write disturb refresh rate of the one or more neighboring cells based on the write-to-write delay. In one example, the technology increments a write counter corresponding to the memory cell by a first value if the write-to-write delay exceeds a delay threshold and increments the write counter by a second value if the write-to-write delay does not exceed the delay threshold, wherein the second value is greater than the first value, and wherein the write disturb refresh rate is controlled based on the write counter.

Abstract: Systems, apparatuses and methods may provide for technology that determines a power-off period associated with a non-volatile memory (NVM), sets a completion time of a write procedure corresponding to the NVM to a first value if the power-off period exceeds a threshold, and sets the completion time to a second value if the power-off period does not exceed the threshold, wherein the first value is greater than the second value.

Abstract: Systems, apparatuses, and methods provide for technology performs write current adjustment management in crosspoint persistent memory structures. Such technology determines whether to adjust a base current in response to a sampling of write-and-read operations on a set of addresses in a crosspoint persistent memory; determines whether a test current reduces a number of bit fails in response to a determination of whether to adjust the base current; and adjusts the base current based on the test current in response to a determination that the test current reduces the number of bit fails.

Abstract: A write history buffer can prevent write disturb in memory, enabling a reduction in write disturb refresh rate and improvement in performance. A memory device can include circuitry to cause consecutive write commands to the same address to be spaced by an amount of time to reduce incidences of write disturb, and therefore reduce the required write disturb refresh rate and improve performance. In one example, a memory device receives multiple write commands to an address. In response to receipt of the multiple write commands, the first write command is sent to the memory and a timer is started. Subsequent write commands that are received after the first write command and before expiration of the timer are held in a buffer. After expiration of the timer, only the most recent of the subsequent write commands to the address is sent to the memory array.

Abstract: A “near miss” based refresh scheme performs refreshes to read disturbed codewords proactively (or on-demand). In one example, a controller receives a read request to a target address (e.g., from a host memory controller). The read request is sent to memory, and the memory returns the read data. ECC logic decodes the read data and determines the number of error bits in the read data. If the number of error bits is greater than a threshold, a refresh write command is sent to the command queue. If an outstanding write command to the same address is already in the queue, the refresh write can be dropped and the outstanding write command converted into a refresh write command. A data cache can service read commands to the target address until the near miss-based refresh command completes.

Abstract: A write history buffer can prevent write disturb in memory, enabling a reduction in write disturb refresh rate and improvement in performance. A memory device can include circuitry to cause consecutive write commands to the same address to be spaced by an amount of time to reduce incidences of write disturb, and therefore reduce the required write disturb refresh rate and improve performance. In one example, a memory device receives multiple write commands to an address. In response to receipt of the multiple write commands, the first write command is sent to the memory and a timer is started. Subsequent write commands that are received after the first write command and before expiration of the timer are held in a buffer. After expiration of the timer, only the most recent of the subsequent write commands to the address is sent to the memory array.

Abstract: Uncorrectable memory errors may be reduced by determining a logical array address for a set of memory arrays and transforming the logical array address to at least two unique array addresses based, at least in part, on logical locations of at least two memory arrays within the set of memory arrays. The at least two memory arrays are then accessed using the at least two unique array addresses, respectively.

Abstract: In one embodiment, an apparatus comprises a first memory array comprising a plurality of phase change memory (PCM) cells; and a controller to track a first cycle count metric based at least in part on a number of writes performed to at least a portion of the first memory array; and adjust, based on the first cycle count metric, a demarcation voltage to be applied during read operations performed on PCM cells of the first memory array.

Abstract: A memory device includes a memory array having multiple nonvolatile memory cells that stores data as a set or a reset state of the memory cells. The nonvolatile memory cells can be resistance-based memory, which stores data based on resistive state of the memory cells. A controller coupled to the memory array periodically samples set and reset margins for memory cells of the memory array. Responsive to detection of a change in a margin, the system can adaptively adjust a preset electrical setting used to differentiate between a set state and a reset state.

Abstract: Uncorrectable memory errors may be reduced by determining a logical array address for a set of memory arrays and transforming the logical array address to at least two unique array addresses based, at least in part, on logical locations of at least two memory arrays within the set of memory arrays. The at least two memory arrays are then accessed using the at least two unique array addresses, respectively.

Abstract: In one embodiment, an apparatus comprises a memory array comprising a plurality of phase change memory (PCM) cells; and a controller to determine to read data stored by the plurality of PCM cells independent of a read command from a host device; and in response to the determination to read data stored by the plurality of PCM cells independent of a read command from a host device, perform a dummy read operation on the plurality of PCM cells and perform an additional read operation on the plurality of PCM cells.

Abstract: Uncorrectable memory errors may be reduced by determining a logical array address for a set of memory arrays and transforming the logical array address to at least two unique array addresses based, at least in part, on logical locations of at least two memory arrays within the set of memory arrays. The at least two memory arrays are then accessed using the at least two unique array addresses, respectively.

Abstract: One embodiment provides a memory controller. The memory controller includes a memory controller memory; a timestamp circuitry and a demarcation voltage (VDM) selection circuitry. The timestamp circuitry is to capture a current timer index from a timer circuitry in response to an initiation of a periodic patrol scrub and to compare the current timer index to a stored timestamp. The VDM selection circuitry is to update a state of a sub-block of a memory array, if the state is less than a threshold and a difference between the current timer index and the stored timestamp is nonzero. The timestamp circuitry is further to store the current timer index as a new timestamp.

Abstract: One embodiment provides a memory controller. The memory controller includes a memory controller memory; a timestamp circuitry and a demarcation voltage (VDM) selection circuitry. The timestamp circuitry is to capture a current timer index from a timer circuitry in response to an initiation of a periodic patrol scrub and to compare the current timer index to a stored timestamp. The VDM selection circuitry is to update a state of a sub-block of a memory array, if the state is less than a threshold and a difference between the current timer index and the stored timestamp is nonzero. The timestamp circuitry is further to store the current timer index as a new timestamp.

Abstract: In one embodiment, an apparatus comprises a first memory array comprising a plurality of phase change memory (PCM) cells; and a controller to track a first cycle count metric based at least in part on a number of writes performed to at least a portion of the first memory array; and adjust, based on the first cycle count metric, a demarcation voltage to be applied during read operations performed on PCM cells of the first memory array.

Abstract: In one embodiment, an apparatus comprises a memory array comprising a plurality of phase change memory (PCM) cells; and a controller to determine to read data stored by the plurality of PCM cells independent of a read command from a host device; and in response to the determination to read data stored by the plurality of PCM cells independent of a read command from a host device, perform a dummy read operation on the plurality of PCM cells and perform an additional read operation on the plurality of PCM cells.

Abstract: A memory device includes a memory array having multiple nonvolatile memory cells that stores data as a set or a reset state of the memory cells. The nonvolatile memory cells can be resistance-based memory, which stores data based on resistive state of the memory cells. A controller coupled to the memory array periodically samples set and reset margins for memory cells of the memory array. Responsive to detection of a change in a margin, the system can adaptively adjust a preset electrical setting used to differentiate between a set state and a reset state.

Abstract: In an embodiment, a memory controller may determine that one or more neighboring memory cells associated with a target memory cell in a memory device are to be refreshed. The controller may generate a command associated with refreshing the one or more neighboring memory cells. The controller may transfer the command from the memory controller to the memory device containing the target memory cell. The command may direct the memory device to refresh the neighboring memory cells and/or return one or more addresses associated with the neighboring memory cells.

Abstract: Uncorrectable memory errors may be reduced by determining a logical array address for a set of memory arrays and transforming the logical array address to at least two unique array addresses based, at least in part, on logical locations of at least two memory arrays within the set of memory arrays. The at least two memory arrays are then accessed using the at least two unique array addresses, respectively.