Abstract: A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.

Abstract: Plasma parameters at a surface of a wafer are determined with a plasma hypermodel based on plasma processing conditions. A post-processing profile can be predicted for the surface of the wafer with a feature-scale profile model. Correlations in the plasma hypermodel can be recalibrated if the post-processing profile is outside a convergence criterion of an experimental reference.

Abstract: Systems and methods for setting up a physics-based model are provided. One system includes one or more components that are executed by one or more computer subsystems and that include a physics-based model describing a semiconductor fabrication-related process and a set up component configured for setting up the physics-based model in multiple phases in each of which only a subset of all of the parameters of the physics-based model are set up. A configuration of the set up component is changed between at least two of the multiple phases based on the subset of all of the parameters of the physics-based model set up in the at least two of the multiple phases. The set up component may perform a Bayesian optimization technique for cascaded model set up or calibration using multiple information sources and objective functions.

Abstract: Systems and methods for setting up a physics-based model are provided. One system includes one or more components that are executed by one or more computer subsystems and that include a physics-based model describing a semiconductor fabrication-related process and a set up component configured for setting up the physics-based model in multiple phases in each of which only a subset of all of the parameters of the physics-based model are set up. A configuration of the set up component is changed between at least two of the multiple phases based on the subset of all of the parameters of the physics-based model set up in the at least two of the multiple phases. The set up component may perform a Bayesian optimization technique for cascaded model set up or calibration using multiple information sources and objective functions.

Abstract: A system is disclosed, in accordance with one or more embodiments of the present disclosure. The system includes a metrology tool configured to acquire one or more measurements of a portion of a sample. The system includes a controller including one or more processors configured to execute program instructions causing the one or more processors to: generate a surface kinetics model output based on a surface kinetics model; determine an expected response of the surface kinetics model output to excitation by polarized light; compare the determined expected response to the one or more measurements; generate one or more metrics based on the comparison between the determined expected response and the one or more measurements of the sample; adjust one or more parameters of the surface kinetics model to generate an adjusted surface kinetics model; and apply the adjusted surface kinetics model to simulate on-sample performance during plasma processing.