Patents by Inventor Q.-Y. Tong

Q.-Y. Tong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for the transfer of thin layers of monocrystalline material to a desirable substrate
    Patent number: 5877070
    Abstract: A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, which may have a substantially different coefficient of thermal expansion than the first substrate is realized by producing hydrogen-traps in the first substrate by a first implantation and then implanting hydrogen followed by a heat-treatment to weaken the connection between the implanted layer and the rest of the first substrate, then forming a strong bond between the implanted first substrate and the second substrate and finally using another heat-treatment in order to split the monocrystalline thin layer from the rest of the first substrate by the formation, growth and overlapping of hydrogen filled microcracks.
    Type: Grant
    Filed: May 31, 1997
    Date of Patent: March 2, 1999
    Assignee: Max-Planck Society
    Inventors: Ulrich M. Goesele, Q.-Y. Tong