Patents by Inventor Qidu Jiang

Qidu Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Showerhead for CVD depositions
    Patent number: 8551890
    Abstract: A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled to oxygen plus a gas mixture of lead, zirconium, and titanium organometallics. A method of depositing a CVD thin film on a wafer. Also, a method of depositing a PZT thin film on a wafer.
    Type: Grant
    Filed: January 9, 2012
    Date of Patent: October 8, 2013
    Assignee: Texas Instruments Incorporated
    Inventors: Brian E. Goodlin, Qidu Jiang
  • Showerhead for CVD depositions
    Patent number: 8551248
    Abstract: A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled to oxygen plus a gas mixture of lead, zirconium, and titanium organometallics. A method of depositing a CVD thin film on a wafer. Also, a method of depositing a PZT thin film on a wafer.
    Type: Grant
    Filed: February 10, 2011
    Date of Patent: October 8, 2013
    Assignee: Texas Instruments Incorporated
    Inventors: Brian E. Goodlin, Qidu Jiang
  • SHOWERHEAD FOR CVD DEPOSITIONS
    Publication number: 20130240637
    Abstract: A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled to oxygen plus a gas mixture of lead, zirconium, and titanium organometallics. A method of depositing a CVD thin film on a wafer. Also, a method of depositing a PZT thin film on a wafer.
    Type: Application
    Filed: May 14, 2013
    Publication date: September 19, 2013
    Applicant: Texas Instruments Incorporated
    Inventors: Brian E. Goodlin, Qidu Jiang
  • SHOWERHEAD FOR CVD DEPOSITIONS
    Publication number: 20120108076
    Abstract: A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled to oxygen plus a gas mixture of lead, zirconium, and titanium organometallics. A method of depositing a CVD thin film on a wafer. Also, a method of depositing a PZT thin film on a wafer.
    Type: Application
    Filed: January 9, 2012
    Publication date: May 3, 2012
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Brian E. Goodlin, Qidu Jiang
  • Showerhead for CVD Depositions
    Publication number: 20110256729
    Abstract: A CVD showerhead that includes a circular inner showerhead and at least one outer ring showerhead. At least two process gas delivery tubes are coupled to each showerhead. Also, a dual showerhead that includes a circular inner showerhead and at least one outer ring showerhead where each showerhead is coupled to oxygen plus a gas mixture of lead, zirconium, and titanium organometallics. A method of depositing a CVD thin film on a wafer. Also, a method of depositing a PZT thin film on a wafer.
    Type: Application
    Filed: February 10, 2011
    Publication date: October 20, 2011
    Applicant: TEXAS INSTRUMENTS INCORPORATED
    Inventors: Brian E. Goodlin, Qidu Jiang
  • Hydrogen-less CVD TiN process for FeRAM VIA0 barrier application
    Patent number: 6998275
    Abstract: The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.
    Type: Grant
    Filed: April 9, 2003
    Date of Patent: February 14, 2006
    Assignee: Texas Instruments Incorporated
    Inventors: Jin Zhao, M. Grant Albrecht, Qidu Jiang, Linlin Chen
  • Hydrogen-less CVD TiN process for FeRAM VIA0 barrier application
    Publication number: 20040203176
    Abstract: The present invention is directed to a method of forming a diffusion barrier layer for a FeRAM capacitor, which includes depositing a chemical vapor deposited titanium nitride layer in a via, and treating the chemical vapor deposited titanium nitride layer using a plasma treatment substantially excluding hydrogen.
    Type: Application
    Filed: April 9, 2003
    Publication date: October 14, 2004
    Inventors: Jin Zhao, M. Grant Albrecht, Qidu Jiang, Linlin Chen