Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume; a first heating device configured to heat a substrate to a first temperature; a carrier configured to support the substrate while the substrate is being heated using the first heating device to the first temperature and transfer the substrate to and from each of the first processing volume and the second processing volume; a second heating device configured to maintain the substrate at or near the first temperature; and a chuck configured to receive the substrate from the carrier, and comprising an outer zone and an inner zone having independent variable pressure control to apply a chucking force at the outer zone that is different from a chucking force provided at the inner zone.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a system for processing a substrate includes a process chamber comprising a first processing volume and a second processing volume; a first heating device configured to heat a substrate to a first temperature; a carrier configured to support the substrate while the substrate is being heated using the first heating device to the first temperature and transfer the substrate to and from each of the first processing volume and the second processing volume; a second heating device configured to maintain the substrate at or near the first temperature; and a chuck configured to receive the substrate from the carrier, and comprising an outer zone and an inner zone having independent variable pressure control to apply a chucking force at the outer zone that is different from a chucking force provided at the inner zone.

Abstract: Embodiments of methods and apparatus for reducing warpage of a substrate are provided herein. In some embodiments, a method for reducing warpage of a substrate includes heating the substrate with an epoxy layer to at least a glass transition temperature of the epoxy layer while allowing the substrate to expand; subsequently constraining the substrate with a clamping force exerted towards the substrate from a top direction by applying a high pressure gas to the substrate and from a bottom direction by applying a vacuum pressure to the substrate; and rapidly cooling the substrate while the substrate is constrained.

Abstract: Methods and apparatus for reducing warpage of a substrate. In some embodiments, a method of reducing substrate warpage comprises heating the substrate with an epoxy layer to at least a glass transition temperature of the epoxy layer while allowing the substrate to expand; maintaining the at least the glass transition temperature of the substrate until the substrate is constrained; constraining the substrate with a total clamping force of approximately 5000N to approximately 7000N exerted towards the substrate from a top direction and a bottom direction; applying at least one electrostatic field to the substrate with a first electrostatic chuck positioned above the substrate and a second electrostatic chuck positioned below the substrate; and rapidly cooling the substrate using a first liquid convection heat sink positioned above the substrate and a second liquid convection heat sink positioned below the substrate.

Abstract: Methods for bonding and de-bonding a thin substrate film to a carrier plate are provided herein. In some embodiments, a method of processing a semiconductor substrate includes applying a polymer layer that is non-adhesive to a carrier plate formed of a dielectric material. A second layer is then applied to the polymer layer. One or more redistribution layers are then formed on the second layer. The second layer is then separated from the carrier plate via at least one of magnetic induction heating, infrared exposure, or electrostatic repulsion.

Abstract: Methods and apparatus for removing particles from a substrate surface after a chemical mechanical polish. In some embodiments, the apparatus may include a manifold configured to receive and atomize a fluid and at least one spray nozzle mounted to the manifold and configured to spray the atomized fluid in a divergent spray pattern such that the substrate surface is cleansed when impinged by spray from the at least one spray nozzle, wherein the at least one spray nozzle sprays the atomized fluid at a pressure of approximately 30 psi to approximately 2500 psi.

Abstract: Methods for bonding and de-bonding a thin substrate film to a carrier plate are provided herein. In some embodiments, a method of processing a semiconductor substrate includes applying a polymer layer that is non-adhesive to a carrier plate formed of a dielectric material. A second layer is then applied to the polymer layer. One or more redistribution layers are then formed on the second layer. The second layer is then separated from the carrier plate via at least one of magnetic induction heating, infrared exposure, or electrostatic repulsion.