Abstract: A continuous solid organic matter pyrolysis polygeneration system and method for using the system is disclosed. The pyrolysis polygeneration system mainly includes a processing system, a drying furnace, a pyrolysis furnace, a cooling furnace, a tail gas treatment system, and a gas treatment system and a protective gas circulation system cooperate with each other to realize the multi-level rational utilization of energy, and are suitable for the continuous and rapid pyrolysis and carbonization of various solid organic matter in the actual production. While realizing the polygeneration of coke, wood vinegar and tar, the maximum utilization of overall heat is realized through process optimization.

Abstract: In an embodiment of the disclosure, disclosed is a circuit based on in-memory computing in a digital domain, including: an array of computational storage cells, the computational storage cells including a preset number of data storage cells and a preset number of single-bit multipliers in one-to-one correspondence; an adder tree configured to accumulate products output by respective computational storage cells to obtain an accumulated result; and a multi-bit input transfer logic configured to convert accumulated results output by the adder tree and corresponding to respective single bits included in the input feature data into a multiply-accumulate result of multi-bit input feature data and multi-bit weight data. An in-memory multiply-accumulation is implemented or multi-bit weight data and input feature data, so that efficiency and energy efficiency density of in-memory computing is improved, “read disturb write” issue caused by a voltage change on bit lines is avoided, and computing stability is improved.

Abstract: A memory device includes a memory control unit and a write output clock device. The memory control unit is used to provide a write input clock and a first control value. The write output clock device produces a plurality of internal clocks based on the write input clock, and selects a target internal clock from the plurality of internal clocks, and further delays the target internal clock to become a write output clock to a memory unit based on the first control value. The memory unit produces a data signal based on the write output clock. The memory control unit identifies whether the write output clock meets the time-sequence requirements of the memory unit. If the time-sequence requirements are not met, the memory control unit changes the first control value and/or changes the selected target internal clock to change the write output clock.

Abstract: A memory device includes a memory control unit and a write output clock device. The memory control unit is used to provide a write input clock and a first control value. The write output clock device produces a plurality of internal clocks based on the write input clock, and selects a target internal clock from the plurality of internal clocks, and further delays the target internal clock to become a write output clock to a memory unit based on the first control value. The memory unit produces a data signal based on the write output clock. The memory control unit identifies whether the write output clock meets the time-sequence requirements of the memory unit. If the time-sequence requirements are not met, the memory control unit changes the first control value and/or changes the selected target internal clock to change the write output clock.

Abstract: A processing system and method for a data strobe signal (DQS). A counter circuit counts falling edges of the DQS within a valid region of the DQS and thereby generates a plurality of counting signals. An OR logic circuit receives the counting signals and a DQS window start signal and thereby generates a DQS window signal. A filter circuit is provided to gate the DQS according to the DQS window signal. The DQS window start signal is kept asserted until at least one of the counting signals changes due to the counting.

Abstract: A processing system and method for a data strobe signal (DQS). A counter circuit counts falling edges of the DQS within a valid region of the DQS and thereby generates a plurality of counting signals. An OR logic circuit receives the counting signals and a DQS window start signal and thereby generates a DQS window signal. A filter circuit is provided to gate the DQS according to the DQS window signal. The DQS window start signal is kept asserted until at least one of the counting signals changes due to the counting.

Abstract: A level-shift circuit, receiving a supply voltage and a input signal, includes a pre-stage voltage conversion circuit and a post-stage voltage conversion circuit. The pre-stage voltage conversion circuit includes a first voltage protection module generating an inner conversion voltage and a first voltage conversion module converting the input signal into a pre-stage output signal according to the inner conversion voltage. The post-stage voltage conversion circuit includes a second voltage protection module generating a first inverse output signal, a first output signal, a second inverse output signal, and a second output signal. The transistors of the pre-stage voltage conversion circuit and the post-stage voltage conversion circuit have a punch-through voltage. The level-shift makes the stress of the transistors less than the punch-through voltage when the supply voltage is greater than the punch-through voltage, and remains the driving capability when being less than the punch-through voltage.

Abstract: A delay lock loop including a selection unit, a delay unit, and a phase detection unit is provided. The selection unit receives a non-inverted clock signal and an inverted clock signal and generates a first clock signal and a second clock signal according to an indication signal. The delay unit is coupled to the selection unit. The delay unit includes a delay factor and delays the first clock signal to generate a third clock signal according to the delay factor. The phase detection unit is coupled to the delay unit and the selection unit and generates the indication signal according to a phase difference between the second and third clock signals. The delay unit adjusts the delay factor according to the indication signal.

Abstract: A delay lock loop is provided. A delay unit delays a first clock signal to generate a second clock signal according to the delay factor. An elimination unit delays a third clock signal to generate a fourth clock signal. A phase detection unit generates an indication signal according to a phase difference between the second and fourth clock signals. When a duration of the indication signal being at a first level does not arrive at a pre-determined value and the indication signal is at a second level, the control unit increases the delay factor. When the duration of the indication signal being at the first level arrives at the pre-determined value and the indication signal is at the second level, the control unit reduces the delay factor.

Abstract: A delay lock loop including a selection unit, a delay unit, an elimination unit, and a phase detection unit is provided. The selection unit receives a non-inverted clock signal and an inverted clock signal and generates a first clock signal and a second clock signal according to an indication signal. The delay unit includes a delay factor and delays the first clock signal according to the delay factor to generate a third clock signal. The elimination unit is coupled to the selection unit and delays the second clock signal to generate a fourth clock signal. The phase detection unit is coupled to the delay unit and the elimination unit and generates the indication signal according to a phase difference between the third and fourth clock signals. The delay unit adjusts the delay factor according to the indication signal.

Abstract: A delay lock loop is provided. A delay unit includes a delay factor and delays a first clock signal to generate a second clock signal according to the delay factor. An elimination unit delays a third clock signal to generate a fourth clock signal. A phase detection unit is coupled to the delay unit and the elimination unit and generates an indication signal according to a phase difference between the second and fourth clock signals. A control unit is coupled to the phase detection unit and the delay unit. The control unit controls the delay unit according to the indication signal to adjust the delay factor. When the delay factor is equal to an initial value, an initial time difference occurs between the first and second clock signals. A time difference between the third and fourth clock signals is equal to the initial time difference.

Abstract: A level-shift circuit, receiving a supply voltage and a input signal, includes a pre-stage voltage conversion circuit and a post-stage voltage conversion circuit. The pre-stage voltage conversion circuit includes a first voltage protection module generating an inner conversion voltage and a first voltage conversion module converting the input signal into a pre-stage output signal according to the inner conversion voltage. The post-stage voltage conversion circuit includes a second voltage protection module generating a first inverse output signal, a first output signal, a second inverse output signal, and a second output signal. The transistors of the pre-stage voltage conversion circuit and the post-stage voltage conversion circuit have a punch-through voltage. The level-shift makes the stress of the transistors less than the punch-through voltage when the supply voltage is greater than the punch-through voltage, and remains the driving capability when being less than the punch-through voltage.

Abstract: A level-shift circuit, receiving a supply voltage and a input signal, includes a pre-stage voltage conversion circuit and a post-stage voltage conversion circuit. The pre-stage voltage conversion circuit includes a first voltage protection module generating an inner conversion voltage and a first voltage conversion module converting the input signal into a pre-stage output signal according to the inner conversion voltage. The post-stage voltage conversion circuit includes a second voltage protection module generating a first inverse output signal, a first output signal, a second inverse output signal, and a second output signal. The transistors of the pre-stage voltage conversion circuit and the post-stage voltage conversion circuit have a punch-through voltage. The level-shift makes the stress of the transistors less than the punch-through voltage when the supply voltage is greater than the punch-through voltage, and remains the driving capability when being less than the punch-through voltage.

Abstract: A level-shift circuit, receiving a supply voltage and a input signal, includes a pre-stage voltage conversion circuit and a post-stage voltage conversion circuit. The pre-stage voltage conversion circuit includes a first voltage protection module generating an inner conversion voltage and a first voltage conversion module converting the input signal into a pre-stage output signal according to the inner conversion voltage. The post-stage voltage conversion circuit includes a second voltage protection module generating a first inverse output signal, a first output signal, a second inverse output signal, and a second output signal. The transistors of the pre-stage voltage conversion circuit and the post-stage voltage conversion circuit have a punch-through voltage. The level-shift makes the stress of the transistors less than the punch-through voltage when the supply voltage is greater than the punch-through voltage, and remains the driving capability when being less than the punch-through voltage.