Abstract: A device and method of controlling an electrode and electrolytic cell are provided, which independently utilizes clean energy with large power fluctuation range as an electrolysis power source for hydrogen and oxygen production. The basic number of electrodes is set by the minimum cut-in voltage value of fluctuating power sources such as wind or solar power. According to fluctuating power sources such as wind or solar power, the ratio of the minimum cut-in current and the reference current corresponding to the lowest cut-in voltage value sets the effective size of the electrodes to be connected in or cut out.

Abstract: The present application discloses an epitaxial growth method for an FDSOI hybrid region, comprising: step 1, providing an FDSOI substrate structure, and forming a hard mask layer; step 2, forming a trench in the entire hybrid region, wherein the bottom surface of the trench is below or level with the top surface of the semiconductor body layer; step 3, performing oxidation to form a first oxide layer on the exposed surfaces of the semiconductor body layer and the semiconductor top layer; step 4, fully etching the first oxide layer, and forming an inner sidewall composed of the remaining first oxide layer on the side surface of the trench in a self-aligned manner; and step 5, performing epitaxial growth to form, in the trench, a semiconductor epitaxial layer in contact with the semiconductor body layer.

Abstract: A manufacturing method of a fin semiconductor device is disclosed. The method includes: providing a substrate; etching the substrate the first time to form a fin channel structure which protrudes from the substrate; forming a protective oxide layer on two sidewalls and the top surface of the fin channel structure; etching a the second time to form the base part of the fin channel structure, wherein the base part is not covered by the protective layer; oxidizing the base part of the fin channel, when the upper part of the fin channel is blocked from oxidation by the protective layer; removing both the protective layer and the oxidized base part of the fin channel structure, so that the upper part of the fin channel structure is suspended over the substrate.

Abstract: Two PARMS-SNP molecular markers for identifying resistant gene VrTAF5 of Vigna radiata (Linn.) Wilczek Cercospora leaf spot disease are provided, which belongs to the field of molecular genetic breeding. The two molecular markers PARMS-1517 and PARMS-10010 include SNP sites located at the 32622352 and 32613913 bases of Vigna radiata (Linn.) Wilczek chromosome 6 respectively. 240 bp sequence before and after the PARMS-1517 is shown in SEQ ID NO.1, a 131st position is SNP site, and a polymorphism is A/C; 240 bp sequence before and after the PARMS-10010 is shown in SEQ ID NO.2, a 117th position is SNP site, and a polymorphism is A/G. The PARMS-SNP molecular markers have a high specificity, accurate and reliable detection results, which can be used for rapid identifying Vigna radiata (Linn.) Wilczek Cercospora leaf spot disease resistant varieties, molecular marker-assisted selective breeding, and shortening a breeding period.

Abstract: The invention relates to the field of passive power generation devices, in particular to a toggle-type magnetic power generation device, which comprising a coil, a magnetic core, a coil bobbin and a coil support. A through groove allowing the magnetic core to penetrate through is formed in the coil bobbin. The coil is wound around the outer surface of a side wall of the through groove and corresponds to the magnetic core. An opening allowing part of the coil bobbin to be embedded therein is formed in the coil support. The opening is formed in the coil support and allows part of the coil bobbin to be embedded therein, so that the number of turns of the coil is increased under the precondition of maintaining the existing size, thus improving the power generation capacity and the stability of the electrical performance of the magnetic power generation device.

Abstract: The present disclosure discloses a semiconductor device, which comprises: an embedded gate structure with a bottom embedded in a semiconductor substrate; a channel region formed below the bottom surface of the embedded gate structure; a source region and a drain region formed on the two sides of the embedded gate structure; an embedded epitaxial layer formed in the source region or the drain region, the bottom surface of the embedded gate structure being in flush with the maximum stress position of the embedded epitaxial layer. The present disclosure further discloses a method for manufacturing a semiconductor device. The present disclosure can enable the channel region to be located in the maximum stress region of the embedded epitaxial layer, thereby improving the mobility of channel carriers to the utmost extent and improving the conduction current of the device.

Abstract: An image search method is provided. In the method, an image selection page of a messaging application is displayed. An input image for a search is determined based on an operation performed by a user on the image selection page. A search is performed for at least one output image similar to the input image based on a plurality of types of image characteristics that indicate levels of similarity between images. Each of the ay least one output image is determined to be similar to the input image based on at least one of the types of image characteristics. A search result list is generated according to the at least one output image. Further, the search result list is displayed.

Abstract: A manufacturing method of a fin semiconductor device comprises: providing a substrate, wherein a fin channel base is patterned on and in contact with the substrate; epitaxially growing a top part of the fin channel base and extending the top part of the fin channel base sideways and upward to form a fin channel core; oxidizing the fin channel base to form a fin channel structure, wherein the fin channel structure comprises the fin channel core surrounded with an oxide layer at the top part of the fin channel base and an intermediate part of the fin channel base under the top part; and removing the oxide layer to expose the fin channel core, wherein the fin channel core suspends over the substrate.

Abstract: A manufacturing method of a fin semiconductor device comprises: providing a substrate; etching the substrate form a fin channel structure protruding from the substrate for a first time to; forming a protective layer made of an oxide on two sidewalls and the top surface of the fin channel structure; etching the substrate for a second time to extend the fin channel structure deeper into the substrate to form the base part of the fin channel structure, wherein the base part is not covered by the protective layer; oxidizing the base part of the fin channel, wherein the upper part of the fin channel is blocked from oxidation by the protective layer; and removing the protective layer and the oxidized base part of the fin channel structure, so that the upper part of the fin channel structure is suspended over the substrate.

Abstract: This disclosure relates to a search result processing method and apparatus, and a storage medium. The method may include acquiring a search result according to a search keyword and obtaining an accurate matching score of the search result relative to the search keyword. The method may further include determining a semantic matching weight vector of the search result, a semantic representation vector of the search keyword, and a semantic representation vector of the search result. The method may further include obtaining a semantic matching score of the search result relative to the search keyword according to the semantic representation vectors and the semantic matching weight vector. The method may further include obtaining a similarity between the search result and the search keyword according to the accurate matching score and the semantic matching score.

Abstract: This application provides a keyword extraction method. The method includes: receiving an information entity including a title and a text; performing word segmentation on the text, to obtain a plurality of candidate words; and performing character segmentation on the title corresponding to semantics of the text, to obtain a plurality of characters; sequentially inputting the plurality of candidate words to a keyword extraction model, to obtain an attention weight of each candidate word relative to each character; selecting, from the plurality of candidate words, a candidate word that appears in the title; determining an extraction threshold according to an attention weight of the selected candidate word relative to each character; and determining a keyword of the text of the information entity from the candidate words according to the extraction threshold. This application further provide a method for training a keyword extraction model, a computer device, and a storage medium.

Abstract: A classification method and a classification device for service data. The classification method includes: acquiring service data, each including plural service indicators; extracting the service data whose category attribute meets a preset condition according to a set extraction rule to form a first data set, the extraction rule set according to part of the service indicators; taking and clustering the service data that are not extracted as a second data set; determining a classification result of the service data according to the first data set and a clustering result of the second data set; extracting service data of definite category attributes according to the extraction rule; and determining a classification result of service data according to a result of clustering of the service data which are not extracted and the service data having definite category attributes.

Abstract: The present disclosure discloses a semiconductor device, which comprises: an embedded gate structure with a bottom embedded in a semiconductor substrate; a channel region formed below the bottom surface of the embedded gate structure; a source region and a drain region formed on the two sides of the embedded gate structure; an embedded epitaxial layer formed in the source region or the drain region, the bottom surface of the embedded gate structure being in flush with the maximum stress position of the embedded epitaxial layer. The present disclosure further discloses a method for manufacturing a semiconductor device. The present disclosure can enable the channel region to be located in the maximum stress region of the embedded epitaxial layer, thereby improving the mobility of channel carriers to the utmost extent and improving the conduction current of the device.

Abstract: A structure of SiGe source/drain and a preparation method thereof are disclosed in the present invention. Firstly, providing a semiconductor single crystal silicon substrate. Secondly, etching the semiconductor single crystal silicon substrate to form recesses on both sides of the gate. Thirdly, epitaxially growing a SiGe seed layer and a SiGe bulk layer in the recesses in turn. Fourthly, subjecting the SiGe bulk layer to a crystal plane treatment with a mixed-gases. Fifthly, epitaxially growing a lattice change layer on the SiGe bulk layer. Finally, epitaxially growing a cap layer on the lattice change layer. The preparation method of the present invention can greatly improve the morphology of the SiGe epitaxy in the incomplete Un-tuck structure, and promote the formation of the subsequent metal silicide (NiSi), so that problems such as abnormal resistance and leakage of active area (AA leakage) can be effectively prevented.

Abstract: Embodiments of the present invention relate to a method, an apparatus and a system for transmitting a media stream. The method is executed by an access terminal, includes: establishing a real-time collaboration channel between the access terminal and a network computer; sending through a first VDI channel to the network computer an operation instruction input by a user; receiving a real-time collaboration message that is sent through the real-time collaboration channel by the network computer; performing, through the network computer, media negotiation with a communication device, so as to determine a media attribute parameter that is used to transmit a media stream between the access terminal and the communication device; and transmitting, by the access terminal, a media stream mutually with the communication device according to the media attribute parameter determined through the media negotiation.

Abstract: A classification method and a classification device for service data. The classification method includes: acquiring service data, each including plural service indicators; extracting the service data whose category attribute meets a preset condition according to a set extraction rule to form a first data set, the extraction rule set according to part of the service indicators; taking and clustering the service data that are not extracted as a second data set; determining a classification result of the service data according to the first data set and a clustering result of the second data set; extracting service data of definite category attributes according to the extraction rule; and determining a classification result of service data according to a result of clustering of the service data which are not extracted and the service data having definite category attributes.

Abstract: A structure of SiGe source/drain and a preparation method thereof are disclosed in the present invention. Firstly, providing a semiconductor single crystal silicon substrate. Secondly, etching the semiconductor single crystal silicon substrate to form recesses on both sides of the gate. Thirdly, epitaxially growing a SiGe seed layer and a SiGe bulk layer in the recesses in turn. Fourthly, subjecting the SiGe bulk layer to a crystal plane treatment with a mixed-gases. Fifthly, epitaxially growing a lattice change layer on the SiGe bulk layer. Finally, epitaxially growing a cap layer on the lattice change layer. The preparation method of the present invention can greatly improve the morphology of the SiGe epitaxy in the incomplete Un-tuck structure, and promote the formation of the subsequent metal silicide (NiSi), so that problems such as abnormal resistance and leakage of active area (AA leakage) can be effectively prevented.

Abstract: A structure of SiGe source/drain and a preparation method thereof are disclosed in the present invention. Firstly, providing a semiconductor single crystal silicon substrate. Secondly, etching the semiconductor single crystal silicon substrate to form recesses on both sides of the gate. Thirdly, epitaxially growing a SiGe seed layer and a SiGe bulk layer in the recesses in turn. Fourthly, subjecting the SiGe bulk layer to a crystal plane treatment with a mixed-gases. Fifthly, epitaxially growing a lattice change layer on the SiGe bulk layer. Finally, epitaxially growing a cap layer on the lattice change layer. The preparation method of the present invention can greatly improve the morphology of the SiGe epitaxy in the incomplete Un-tuck structure, and promote the formation of the subsequent metal silicide (NiSi), so that problems such as abnormal resistance and leakage of active area (AA leakage) can be effectively prevented.

Abstract: A structure of SiGe source/drain and a preparation method thereof are disclosed in the present invention. Firstly, providing a semiconductor single crystal silicon substrate. Secondly, etching the semiconductor single crystal silicon substrate to form recesses on both sides of the gate. Thirdly, epitaxially growing a SiGe seed layer and a SiGe bulk layer in the recesses in turn. Fourthly, subjecting the SiGe bulk layer to a crystal plane treatment with a mixed-gases. Fifthly, epitaxially growing a lattice change layer on the SiGe bulk layer. Finally, epitaxially growing a cap layer on the lattice change layer. The preparation method of the present invention can greatly improve the morphology of the SiGe epitaxy in the incomplete Un-tuck structure, and promote the formation of the subsequent metal silicide (NiSi), so that problems such as abnormal resistance and leakage of active area (AA leakage) can be effectively prevented.

Abstract: A connection recovery method includes searching, by a first terminal, for a recovery candidate corresponding to an interrupted connection; selecting, by the first terminal, one found recovery candidate as a first recovery candidate; sending, by the first terminal, a negotiation request to a second terminal; receiving, by the first terminal, a matching success message returned by the second terminal; and transmitting, by the first terminal, data to the second terminal according to the first connection information.