Abstract: Methods and systems for performing optical, model based measurements of a small sized semiconductor structure employing an anisotropic characterization of the optical dispersion properties of one or more materials comprising the structure under measurement are presented herein. This reduces correlations among geometric parameters and results in improved measurement sensitivity, improved measurement accuracy, and enhanced measurement contrast among multiple materials under measurement. In a further aspect, an element of a multidimensional tensor describing the dielectric permittivity of the materials comprising the structure is modelled differently from another element. In a further aspect, model based measurements are performed based on measurement data collected from two or more measurement subsystems combined with an anisotropic characterization of the optical dispersion of the materials under measurement.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

Abstract: Methods and systems for evaluating and ranking the measurement efficacy of multiple sets of measurement system combinations and recipes for a particular metrology application are presented herein. Measurement efficacy is based on estimates of measurement precision, measurement accuracy, correlation to a reference measurement, measurement time, or any combination thereof. The automated the selection of measurement system combinations and recipes reduces time to measurement and improves measurement results. Measurement efficacy is quantified by a set of measurement performance metrics associated with each measurement system and recipe. In one example, the sets of measurement system combinations and recipes most capable of measuring the desired parameter of interest are presented to the user in rank order based on corresponding values of one or more measurement performance metrics. A user is able to select the appropriate measurement system combination in an objective, quantitative manner.

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user.

Abstract: The present teachings are directed to inorganic oxide materials that include Al2O3, CeO2, and at least one of MgO and Pr6O11. The present teachings are also directed to catalysts having at least one noble metal supported on these inorganic oxide materials, as well as methods for treating exhaust gases from internal combustion engines using such catalysts.

Abstract: Described herein are methods for forming inorganic composite oxides. Such methods include combining, at a substantially constant pH of between about 5 and about 6.75 over a period of at least about 5 minutes, an acidic precursor composition and a basic composition to form a precipitate composition, wherein the acidic precursor composition comprises an alumina precursor, a ceria precursor, a zirconia precursor and optionally one or more dopant precursors; stabilizing the precipitate by increasing the pH of the precipitate composition to between about 8 and about 10; and calcining the stabilized precipitate to form an inorganic composite oxide. Also described are inorganic composite oxides formed using such methods.

Abstract: The present invention includes generating a three-dimensional design of experiment (DOE) for a plurality of semiconductor wafers, a first dimension of the DOE being a relative amount of a first component of the thin film, a second dimension of the DOE being a relative amount of a second component of the thin film, a third dimension of the DOE being a thickness of the thin film, acquiring a spectrum for each of the wafers, generating a set of optical dispersion data by extracting a real component (n) and an imaginary component (k) of the complex index of refraction for each of the acquired spectrum, identifying one or more systematic features of the set of optical dispersion data; and generating a multi-component Bruggeman effective medium approximation (BEMA) model utilizing the identified one or more systematic features of the set of optical dispersion data.

Abstract: The present invention provides a green light iridium (III) complex and a method of preparing the same, which has a formula as follows: wherein m is 2 or 3; at least one of Ar1, Ar2, Ar3, Ar4, and Ar5 is a group containing fluorophenyl unit, which has a formula as follows: wherein R1, R2, R3, R4, R5 are H, CH3, or FCF3, and at least one of R1, R2, R3, R4, R5 is F or CF3. The green light iridium (III) complex of the present invention has higher light emitting efficiency; the method of preparing the same has tender reaction conditions, simple synthesis steps and easy to handle. Due to the fluorophenyl unit capable of transporting electrons introduced therein, carrier current mobility and exciton transporting equilibrium are increased to contribute better exciton recombination so as to enhance performance of an organic electroluminescent device.

Abstract: The present invention provides a green light iridium (III) complex and a method of preparing the same, which has a formula as follows: wherein m is 2 or 3; at least one of Ar1, Ar2, Ar3, Ar4, and Ar5 is a group containing fluorophenyl unit, which has a formula as follows: wherein R1, R2, R3, R4, R5 are H, CH3, or FCF3, and at least one of R1, R2, R3, R4, R5 is F or CF3. The green light iridium (III) complex of the present invention has higher light emitting efficiency; the method of preparing the same has tender reaction conditions, simple synthesis steps and easy to handle. Due to the fluorophenyl unit capable of transporting electrons introduced therein, carrier current mobility and exciton transporting equilibrium are increased to contribute better exciton recombination so as to enhance performance of an organic electroluminescent device.

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user.

Abstract: A bonding layer, disposed between an interconnect layer and an electrode layer of a solid oxide fuel cell article, may be formed from a yttria stabilized zirconia (YSZ) powder having a monomodal particle size distribution (PSD) with a d50 that is greater than about 1 ?m and a d90 that is greater than about 2 ?m.

Abstract: A transconductance-enhancing passive frequency mixer comprises a transconductance amplification stage, a frequency mixing stage, and an output transresistance amplifier. The transconductance amplification stage has a pre-amplification transconductance-enhancing structure, so that the transconductance is greatly enhanced, thereby obtaining the same transconductance value at a lower bias current. A radio-frequency current is modulated by the frequency mixing stage to generate an output mid-frequency current signal. The mid-frequency current signal passes through the transresistance amplifier, to form voltage output, and finally obtain a mid-frequency voltage signal. The transresistance amplifier has a transconductance-enhancing structure, thereby further reducing input impedance, and improving current utilization efficiency and port isolation. The frequency mixer has the characteristics of low power consumption, high conversion gain, good port isolation, and the like.

Abstract: Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

Abstract: A bonding layer, disposed between an interconnect layer and an electrode layer of a solid oxide fuel cell article, may be formed from a yttria stabilized zirconia (YSZ) powder having a monomodal particle size distribution (PSD) with a d50 that is greater than about 1 ?m and a d90 that is greater than about 2 ?m.

Abstract: A local oscillator (LO) of a test system is set to an initial frequency whereupon a device under test (DUT) transmits a radio frequency (RF) signal to the test system. Characteristics of the RF signal are measured with the test system and used to identify magnitudes and frequencies of spurious signal products. The LO of the test system is reset to one or more subsequent frequencies that are offset from the initial frequency. One or more subsequent RF signals are transmitted from the DUT to the test system, with the DUT maintaining its original signal settings. Characteristics of the subsequent RF signals are measured with the test system and used to identify magnitudes and frequencies of spurious signal products for each of the subsequent LO frequencies. The spurious signal products that have shifted in frequency for each of the subsequent LO frequencies as self-generated signal products can then be identified.

Abstract: A portable storage device (1) includes a flash memory element (5) for providing mass storage functionality to a host device via a host device interface (4), and a computing environment (8), comprising an application processor (6), a system memory (1), and wireless interface support (a wireless connection) (12). The storage device (3) also includes a display interface (13) that is able to couple the storage device (3) to a display, such as a display screen, and via which graphical outputs generated by an operating system and applications executing in the computing environment (8) on the storage device (3) can be displayed on a display.

Abstract: A system is disclosed that integrates secondary content, such as articles retrieved from a collaborative encyclopedia or other content site, into an electronic catalog system or site that hosts an interactive electronic catalog. In some embodiments, the system operates by retrieving secondary content articles from an external system or site, and by supplementing these articles with interactive display elements for accessing related catalog content and/or functions. For example, if an article mentions a particular catalog item or group of catalog items, it may be supplemented with a selectable display element for viewing catalog content associated with the referenced item or item group. The supplemented articles are made available to users via pages of the electronic catalog system or site.

Abstract: A system for enabling communication between a first domain and a second domain is disclosed. At least the first domain is protected by a firewall. A first data-processing system is provided in the first domain and a second data-processing system provided in second domain. The second domain hosts an application that the first domain desires to access. To enable the communication between the two domains a tunnel is established through the firewall. The tunnel runs from the first data-processing system to the second data-processing system. The second data-processing system provides a web-proxy interface to interface to the application and also acts as a tunnel gateway.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract: A cargo management system for a vehicle having a cargo area (e.g., pickup bed) may include various elements. For example, the system may include a rail attachable to the interior surface of the cargo box inner panel, at least one reinforcement plate positionable against the outer surface of the inner panel, and a plurality of fasteners for holding the rail to the inner panel backed by the reinforcement plate. The rail may have a rail portion and a body portion. The body portion is positioned through a slot formed in the bedliner and includes a base and a pair of opposed side walls connecting the base with the rail portion. Each reinforcement plate has apertures to accommodate multiple mechanical fasteners and reinforcement segments, which are attached by reinforcement segment bridges.