Abstract: Systems and methods are provided for silicon with a carbon-based coating for lithium-ion battery electrodes. An example electrode, for use in an electrochemical cell, includes an active material that includes a plurality of silicon particles, with each silicon particle having a coating covering a surface of the particle. The coating may include a carbon based coating. A least a portion of the silicon (e.g., at least 70%) in the silicon particles is elemental silicon.

Abstract: Systems and methods are provided for aqueous based electrodes (e.g., anodes) with mechanical enhancement additives. An electrode for use in an electrochemical cell has an active material that includes silicon and a mechanical enhancement additive, with the mechanical enhancement additive selected to offset or counter silicon volume changes, and with the mechanical enhancement additive selected based on one or more selection thresholds relating to one or both of Young's modulus and aspect ratio.

Abstract: A monocrystalline SiC substrate comprising a first surface and a second surface. The first surface comprises pinning regions and a device region. Each of the pinning regions is configured to provide a potential well which is capable to attract dislocations from a region surrounding said pinning region. The device region is configured to provide a part of the monocrystalline SiC substrate for manufacturing a semiconductor device. The device region is surrounded by the pinning regions, and a density of dislocations in a central portion of the device region is smaller than a density of dislocations in an edge of the device region due to the pinning regions. The pinning regions surrounding the device region attracts dislocations of the device region into the edge portion, so that the density of dislocations in the central portion is reduced. A yield of the semiconductor devices is improved.

Abstract: A phase change memory and a fabrication method are provided. The fabrication method includes: providing a substrate; forming a heating layer on the substrate; forming a phase change layer on and in contact with one sidewall surface of the heating layer. The phase change memory includes: a substrate; a heating layer on the substrate; and a phase change layer on and in contact with one sidewall surface of the heating layer.

Abstract: A method for fabricating a semiconductor structure is disclosed. The method includes providing a substrate and forming a plurality of fin structures on the substrate. Each fin structure includes a first side and a second side opposite to the first side. The method further includes forming a first doped region containing first doping ions in a portion of the substrate on the first side of each gate structure, and forming a second doped region containing second doping ions in a portion of the substrate on the second side of each gate structure. The ion concentration of the second doping ions in the second doped region is smaller than the ion concentration of the first doping ions in the first doped region, and the atomic weight of the second doping ions is smaller than the atomic weight of the first doping ions.

Abstract: A phase change memory and a fabrication method are provided. The fabrication method includes: providing a substrate; forming a heating layer on the substrate; forming a phase change layer on and in contact with one sidewall surface of the heating layer. The phase change memory includes: a substrate; a heating layer on the substrate; and a phase change layer on and in contact with one sidewall surface of the heating layer.

Abstract: A method for fabricating a semiconductor structure. The method includes providing a substrate and forming a plurality of fin structures on the substrate. Each fin structure includes a first side and a second side opposite to the first side. The method further includes forming a first doped region containing first doping ions in a portion of the substrate on the first side of each gate structure, and forming a second doped region containing second doping ions in a portion of the substrate on the second side of each gate structure. The ion concentration of the second doping ions in the second doped region is smaller than the ion concentration of the first doping ions in the first doped region, and the atomic weight of the second doping ions is smaller than the atomic weight of the first doping ions.

Abstract: A method for managing Internet Protocol (IP) tunnels is provided. The method is executed by a local host. There is at least one IP tunnel planned between the local host and a remote host. The method comprises the following steps. If the local addresses of the tunnels include dynamic IP addresses, acquire the dynamic IP addresses. All tunnels with known remote addresses are built. If there are known remote addresses and the local addresses include dynamic IP addresses, send a notification to the remote host, wherein the notification includes all local dynamic IP addresses. If any local address changes, all tunnels with changed local addresses and known remote addresses are rebuilt. A message is received from the remote host and classified. If the message is a notification, the tunnels are updated according to the remote addresses included in the message, and an acknowledgement is sent back to the remote host.

Abstract: A method for managing Internet Protocol (IP) tunnels is provided. The method is executed by a local host. There is at least one IP tunnel planned between the local host and a remote host. The method comprises the following steps. If the local addresses of the tunnels include dynamic IP addresses, acquire the dynamic IP addresses. All tunnels with known remote addresses are built. If there are known remote addresses and the local addresses include dynamic IP addresses, send a notification to the remote host, wherein the notification includes all local dynamic IP addresses. If any local address changes, all tunnels with changed local addresses and known remote addresses are rebuilt. A message is received from the remote host and classified. If the message is a notification, the tunnels are updated according to the remote addresses included in the message, and an acknowledgement is sent back to the remote host.

Abstract: A position detector is provided for use on a spin-drying machine employed in integrated circuit (IC) fabrication to detect whether the spin-drying machine has shifted in position during operation. If the spin-drying machine is positioned incorrectly, the position detector is capable of stopping the operation of robot arms used to grab and position wafers on the spin-drying machine so that the robot arms will not be damaged or crash into the wafers on the spin-drying machine due to the incorrect positioning of the spin-drying machine. The position detector is designed for use on a spin-drying machine having a spinning unit, a fixed platform surrounding the spinning unit, and at least one robot arm mounted on the fixed unit. The position detector comprises a pair of emitters mounted on the spinning unit and a pair of oppositely arranged receivers on the fixed platform.