Abstract: In accordance with an embodiment, a first electronic device is configured to communicate with a first ultra-wideband base station via ultra-wideband wireless communication and receive coordinates of the first electronic device that are based on a relative location between the first electronic device and the first ultra-wideband base station. The first electronic device is further configured to display a control window of a second electronic device in response to detecting that the first electronic device is located in a front area of the second electronic device and points to the second electronic device.

Abstract: A method is implemented by an electronic device to mark a position of a home device. The method includes that the electronic device receives a first operation of a user, where the first operation is used to trigger the electronic device to mark a position of a first home device in a plurality of home devices. In response to the first operation, the electronic device obtains, by using a UWB chip, spatial position-attitude information of the electronic device when the electronic device separately points to the first home device in n orientations, and calculates spatial position information of the first home device based on the spatial position-attitude information of the electronic device in the n orientations.

Abstract: A method includes a device in an area 1 that requests a ultra-wideband (UWB) base station in the area 1 to measure an initial position, and starts inertial measurement unit (IMU) measurement. The device moves to an area 2, and the device requests to measure distances between each UWB base station in the area 2 and at least three locations. The device returns to the area 1, and requests the UWB base station in the area 1 to measure an end point position. The device corrects coordinates of the device in the area 2 calculated using data obtained through the IMU measurement based on the measured end point position. Calculate the coordinates of each UWB base station in the area 2 based on the corrected coordinates in the area 2 and the measured distances between each UWB base station and the device in the area 2.

Abstract: This application relates to a UWB base station anomaly detection method. The method includes: obtaining a first distance that is between each of the N UWB base stations and the UWB tag and that is obtained through measurement; obtaining an estimated value of spatial coordinates of the UWB tag in the first coordinate system based on the first distance and spatial coordinates of each UWB base station in the first coordinate system; obtaining a second distance between each UWB base station and the UWB tag based on the estimated value and the spatial coordinates of each UWB base station in the first coordinate system; and determining, based on the first distance and the second distance that correspond to each UWB base station, whether a UWB base station in the N UWB base stations is abnormal.

Abstract: Perovskite-based photoactive devices, such as solar cells, include an insulating tunneling layer inserted between the perovskite photoactive material and the electron collection layer to reduce charge recombination and concomitantly provide water resistant properties to the device.

Abstract: Perovskite-based photoactive devices, such as solar cells, include an insulating tunneling layer inserted between the perovskite photoactive material and the electron collection layer to reduce charge recombination and concomitantly provide water resistant properties to the device.

Abstract: Continuous processes for fabricating a perovskite device are described that include forming a perovskite layer or film on a substrate using a linear deposition device, and optionally using a conductive tape lamination process to form an anode or a cathode layer on the perovskite device.

Abstract: Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

Abstract: Continuous processes for fabricating a perovskite device are described that include forming a perovskite layer or film on a substrate using a linear deposition device, and optionally using a conductive tape lamination process to form an anode or a cathode layer on the perovskite device.

Abstract: Continuous processes for fabricating a perovskite device are described that include using a doctor blade for continuously forming a perovskite layer and using a conductive tape lamination process to form an anode or a cathode layer on the perovskite device.

Abstract: Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

Abstract: Continuous processes for fabricating a perovskite device are described that include using a doctor blade for continuously forming a perovskite layer and using a conductive tape lamination process to form an anode or a cathode layer on the perovskite device.

Abstract: A semiconductor device and a method for fabrication of the semiconductor device are described that include a perovskite layer formed using a solution process with lead iodine and methylammonium halide. In an implementation, a semiconductor device that employs example techniques in accordance with the present disclosure includes a cathode layer; an anode layer; and an active layer disposed between the cathode layer and the anode layer, where the active layer includes a perovskite layer including an interdiffused and annealed lead iodine (PbI2) film and methylammonium halide (CH3NH3X) film. In implementations, a process for fabricating a continuous-perovskite semiconductor device that employs example techniques in accordance with the present disclosure includes spinning a PbI2 layer onto an ITO-covered glass; spinning an MAI layer onto the PbI2 layer; annealing the PbI2 layer and the MAI layer; spinning a PCBM layer onto a resulting perovskite layer; and depositing an Al layer.