Abstract: Embodiments described herein relate to methods for etching a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment to implant ions into a spacer material, performing an etching process on an implanted region of the spacer material, and repeating the inert plasma treatment and the etching process to form a predominantly flat top spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as pressure, may be controlled to influence a desired spacer profile.

Abstract: Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.

Abstract: Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes, may benefit from the embodiments described herein which include performing an inert plasma treatment on a spacer material, performing an etching process on a treated region of the spacer material, and repeating the inert plasma treatment and the etching process to form a desired spacer profile. The inert plasma treatment process may be a biased process and the etching process may be an unbiased process. Various processing parameters, such as process gas ratios and pressures, may be controlled to influence a desired spacer profile.

Abstract: A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract: A method for etching a dielectric layer disposed on a substrate is provided. The method includes de-chucking the substrate from an electrostatic chuck in an etching processing chamber, and cyclically etching the dielectric layer while the substrate is de-chucked from the electrostatic chuck. The cyclical etching includes remotely generating a plasma in an etching gas mixture supplied into the etching processing chamber to etch the dielectric layer disposed on the substrate at a first temperature. Etching the dielectric layer generates etch byproducts. The cyclical etching also includes vertically moving the substrate towards a gas distribution plate in the etching processing chamber, and flowing a sublimation gas from the gas distribution plate towards the substrate to sublimate the etch byproducts. The sublimation is performed at a second temperature, wherein the second temperature is greater than the first temperature.

Abstract: Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.

Abstract: Embodiments of the present invention provide a methods for patterning a hardmask layer with good process control for an ion implantation process, particularly suitable for manufacturing the fin field effect transistor (FinFET) for semiconductor chips. In one embodiment, a method of patterning a hardmask layer disposed on a substrate includes forming a planarization layer over a hardmask layer disposed on a substrate, disposing a patterned photoresist layer over the planarization layer, patterning the planarization layer and the hardmask layer uncovered by the patterned photoresist layer in a processing chamber, exposing a first portion of the underlying substrate, and removing the planarization layer from the substrate.

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract: Methods of patterning silicon nitride dielectric films are described. For example, a method of isotropically etching a dielectric film involves partially modifying exposed regions of a silicon nitride layer with an oxygen-based plasma process to provide a modified portion and an unmodified portion of the silicon nitride layer. The method also involves removing, selective to the unmodified portion, the modified portion of the silicon nitride layer with a second plasma process.

Abstract: A method of etching silicon oxide from a trench is described which allows more homogeneous etch rates across a varying pattern on a patterned substrate. The method also provides a more rectilinear profile following the etch process. Methods include a sequential exposure of gapfill silicon oxide. The gapfill silicon oxide is exposed to a local plasma treatment prior to a remote-plasma dry etch which may produce salt by-product on the surface. The local plasma treatment has been found to condition the gapfill silicon oxide such that the etch process proceeds at a more even rate within each trench and across multiple trenches. The salt by-product may be removed by raising the temperature in a subsequent sublimation step.

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract: Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer. The low-k dielectric layer is disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a plasma process. The method also involves, in the same operation, removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.

Abstract: Methods for etching silicon-based antireflective layers are provided herein. In some embodiments, a method of etching a silicon-based antireflective layer may include providing to a process chamber a substrate having a multiple-layer resist thereon, the multiple-layer resist comprising a patterned photoresist layer defining features to be etched into the substrate disposed above a silicon-based antireflective coating; and etching the silicon-based antireflective layer through the patterned photoresist layer using a plasma formed from a process gas having a primary reactive agent comprising a chlorine-containing gas. In some embodiments, the chlorine-containing gas is chlorine (Cl2).

Abstract: Removal of organic mask material from an etched dielectric film with an etchant gas mixture including silicon fluoride (SiF4). In certain embodiments, SiF4 is combined in an etchant gas mixture of molecular nitrogen (N2), carbon dioxide (CO2) to in-situ strip an organic mask material from a porous low-k dielectric film that has been etched to form a damascene interconnect structure with reduced etch profile bowing and reduced ashing damage to the low-k dielectric film.

Abstract: Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a method for removing masking materials from a substrate includes providing a substrate having exposed low-k materials and a masking material to be removed; exposing the masking material to a first plasma formed from a reducing chemistry for a first period of time; and exposing the masking material to a second plasma formed from an oxidizing chemistry for a second period of time. The steps may be repeated as desired and may be performed in reverse order. Optionally, at least one diluent gas may be added to the oxidizing chemistry.

Abstract: Described herein are methods and apparatus for removing photoresist in the presence of low-k dielectric layers. In one embodiment, the method includes exciting a first mixture of gases having a ratio of a flow rate of reducing process gas to a flow rate of an oxygen-containing process gas that is between 1:1 and 100:1 to generate a first reactive gas mixture. Next, the method includes exposing the photoresist layer that overlays the low-k dielectric layer on a substrate to the first reactive gas mixture to selectively remove the photoresist layer from the dielectric layer. Next, the method includes exposing the photoresist layer to a second reactive gas mixture to selectively remove the photoresist layer from the dielectric layer. The first and second reactive gas mixtures contain substantially no ions when the substrate is exposed to these mixtures in order to minimize damage to the low-k dielectric layer.

Abstract: Described herein are methods and apparatuses for etching low-k dielectric layers to form various interconnect structures. In one embodiment, the method includes forming an opening in a resist layer. The method further includes etching a porous low-k dielectric layer with a process gas mixture that includes a fluorocarbon gas and a carbon dioxide (CO2) gas to form vias. The fluorocarbon gas may be C4F6 gas. A ratio of a flow rate of the C4F6 gas to a flow rate of the CO2 gas can vary from approximately 1:2 to 1:10. In another embodiment, the porous low-k dielectric layer is etched with a process gas mixture that includes a fluorocarbon gas and an argon gas with no CHF3 gas to form trenches aligned with the vias in an integrated dual-damascene structure. The fluorocarbon gas may be CF4 gas.

Abstract: Methods for removing masking materials from a substrate having exposed low-k materials while minimizing damage to exposed surfaces of the low-k material are provided herein. In one embodiment a method for removing masking materials from a substrate includes providing a substrate having exposed low-k materials and a masking material to be removed; exposing the masking material to a first plasma formed from a reducing chemistry for a first period of time; and exposing the masking material to a second plasma formed from an oxidizing chemistry for a second period of time. The steps may be repeated as desired and may be performed in reverse order. Optionally, at least one diluent gas may be added to the oxidizing chemistry.