Patents by Inventor Qiuliang Luo

Qiuliang Luo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110186966
    Abstract: A gallium arsenide (GaAs) integrated circuit device is provided. The GaAs circuit device has a GaAs substrate with a copper contact layer for making electrical ground contact with a pad of a target device. Although copper is known to detrimentally affect GaAs devices, the copper contact layer is isolated from the GaAs substrate using a barrier layer. The barrier layer may be, for example, a layer of nickel vanadium (NiV). This nickel vanadium (NiV) barrier protects the gallium arsenide substrate from the diffusion effects of the copper contact layer. An organic solder preservative may coat the exposed copper to reduce oxidation effects. In some cases, a gold or copper seed layer may be deposited on the GaAs substrate prior to depositing the copper contact layer.
    Type: Application
    Filed: April 11, 2011
    Publication date: August 4, 2011
    Applicant: SKYWORKS SOLUTIONS, INC.
    Inventors: Hong Shen, Ravi Ramanathan, Qiuliang Luo, Robert W. Warren, Usama K. Abdali
  • Patent number: 7923842
    Abstract: A gallium arsenide (GaAs) integrated circuit device is provided. The GaAs circuit device has a GaAs substrate with a copper contact layer for making electrical ground contact with a pad of a target device. Although copper is known to detrimentally affect GaAS devices, the copper contact layer is isolated from the GaAs substrate using a barrier layer. The barrier layer may be, for example, a layer of nickel vanadium (NiV). This nickel vanadium (NiV) barrier protects the gallium arsenide substrate from the diffusion effects of the copper contact layer. An organic solder preservative may coat the exposed copper to reduce oxidation effects. In some cases, a gold or copper seed layer may be deposited on the GaAs substrate prior to depositing the copper contact layer.
    Type: Grant
    Filed: March 16, 2006
    Date of Patent: April 12, 2011
    Assignee: Skyworks Solutions, Inc.
    Inventors: Hong Shen, Ravi Ramanathan, Qiuliang Luo, Robert W Warren, Usama K Abdali
  • Publication number: 20070215897
    Abstract: A gallium arsenide (GaAs) integrated circuit device is provided. The GaAs circuit device has a GaAs substrate with a copper contact layer for making electrical ground contact with a pad of a target device. Although copper is known to detrimentally affect GaAS devices, the copper contact layer is isolated from the GaAs substrate using a barrier layer. The barrier layer may be, for example, a layer of nickel vanadium (NiV). This nickel vanadium (NiV) barrier protects the gallium arsenide substrate from the diffusion effects of the copper contact layer. An organic solder preservative may coat the exposed copper to reduce oxidation effects. In some cases, a gold or copper seed layer may be deposited on the GaAs substrate prior to depositing the copper contact layer.
    Type: Application
    Filed: March 16, 2006
    Publication date: September 20, 2007
    Inventors: Hong Shen, Ravi Ramanathan, Qiuliang Luo, Robert Warren, Usama Abdali
  • Patent number: 6676718
    Abstract: According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition further comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silica dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.
    Type: Grant
    Filed: December 4, 2001
    Date of Patent: January 13, 2004
    Assignee: Rodel Holdings, Inc.
    Inventors: Qiuliang Luo, Qianqiu Ye, Kelly H. Block
  • Patent number: 6524168
    Abstract: An aqueous polishing composition for chemical mechanical polishing of semiconductor devices of silica and circuits of aluminum, titanium or titanium nitride; wherein said aqueous composition includes, an oxidizing agent, an inhibitor of a polyalkyleneimine, and a pH buffer, and a method for polishing a semiconductor device by applying the polishing composition at an interface between a polishing pad and the semiconductor device.
    Type: Grant
    Filed: June 15, 2001
    Date of Patent: February 25, 2003
    Assignee: Rodel Holdings, Inc
    Inventors: Qiuliang Luo, James Shen
  • Publication number: 20020173235
    Abstract: The present invention relates to methods for break-in and conditioning polishing pads containing a fixed abrasive matrix. The polishing pads are useful for chemical-mechanical polishing (CMP). The present invention also relates to a method of determining the wear rate of a fixed abrasive polishing pad.
    Type: Application
    Filed: March 29, 2002
    Publication date: November 21, 2002
    Inventors: Vilas N. Koinkar, Reza Golzarian, Matthew VanHanehem, Qiuliang Luo, James Shen, Peter A. Burke
  • Publication number: 20020132563
    Abstract: According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition farther comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silicon dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.
    Type: Application
    Filed: December 4, 2001
    Publication date: September 19, 2002
    Inventors: Qiuliang Luo, Qianqiu Ye, Kelly H. Block
  • Publication number: 20020132560
    Abstract: A chemical mechanical polishing method is provided for polishing substrates with one or more barrier layers on an underlying dielectric layer utilizing a polishing composition with a high selectivity for removal of the barrier layer material (for e.g. tantalum) resulting in a substrate with a planar dielectric layer with minimal scratching and erosion.
    Type: Application
    Filed: January 12, 2001
    Publication date: September 19, 2002
    Inventors: Qiuliang Luo, Qianqiu (Christine) Ye, Kelly H. Block
  • Patent number: 6447373
    Abstract: A slurry for use in chemical-mechanical polishing of a metal layer comprising particles dispersed in an aqueous medium. The slurry particles will tend to agglomerate when the slurry is at rest and will de-agglomerate with simple stirring. Such metastable slurry systems have been found to be particularly advantageous for metal polishing, particularly the polishing of metal layers during the manufacture of semiconductor devices.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: September 10, 2002
    Assignee: Rodel Holdings Inc.
    Inventors: Craig D. Lack, Qiuliang Luo, Qianqiu (Christine) Ye, Vikas Sachan, Terence M. Thomas, Peter A. Burke
  • Patent number: 6419553
    Abstract: The present invention relates to methods for break-in and conditioning polishing pads containing a fixed abrasive matrix. The polishing pads are useful for chemical-mechanical polishing (CMP). The present invention also relates to a method of determining the wear rate of a fixed abrasive polishing pad.
    Type: Grant
    Filed: January 4, 2001
    Date of Patent: July 16, 2002
    Assignee: Rodel Holdings, Inc.
    Inventors: Vilas N. Koinkar, Reza Golzarian, Matthew VanHanehem, Qiuliang Luo, James Shen, Peter A. Burke
  • Publication number: 20020043026
    Abstract: An aqueous polishing composition for chemical mechanical polishing of semiconductor devices of silica and circuits of aluminum, titanium or titanium nitride; wherein said aqueous composition includes, an oxidizing agent, an inhibitor of a polyalkyleneimine, and a pH buffer, and a method for polishing a semiconductor device by applying the polishing composition at an interface between a polishing pad and the semiconductor device.
    Type: Application
    Filed: June 15, 2001
    Publication date: April 18, 2002
    Inventors: Qiuliang Luo, James Shen
  • Publication number: 20020025762
    Abstract: Compounds containing both a sulfur and a nitrogen in a five-membered ring structure are used as biocides in polishing solutions and slurries.
    Type: Application
    Filed: February 2, 2001
    Publication date: February 28, 2002
    Inventors: Qiuliang Luo, Wendy B. Goldberg, Qianqiu (Christine) Ye
  • Publication number: 20010053660
    Abstract: The present invention relates to methods for break-in and conditioning polishing pads containing a fixed abrasive matrix. The polishing pads are useful for chemical-mechanical polishing (CMP).
    Type: Application
    Filed: January 4, 2001
    Publication date: December 20, 2001
    Inventors: Vilas N. Koinkar, Reza Golzarian, Matthew VanHanehem, Qiuliang Luo, James Shen, Peter A. Burke