Patents by Inventor Qiuyi XU

Qiuyi XU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DEVICE FOR HIGH VOLTAGE APPLICATIONS
    Publication number: 20240072109
    Abstract: A device includes a buried oxide layer disposed on a substrate, a first region disposed on the buried oxide layer and a first ring region disposed in the first region. The first ring region includes a portion of a guardring. The device further includes a first terminal region disposed in the first ring region, a second ring region disposed in the first region and a second terminal region disposed in the second ring region. The first terminal region is connected to an anode and the second terminal region is connected to a cathode. The first region has a graded doping concentration. The first region, the second ring region and the second terminal region have a first conductivity type, and the first ring region and the first terminal region have a second conductivity type. The first conductivity type is different from the second conductivity type.
    Type: Application
    Filed: November 9, 2023
    Publication date: February 29, 2024
    Inventors: Kwangsik KO, Qiuyi XU, Shajan MATHEW
  • Device for high voltage applications
    Patent number: 11862673
    Abstract: A device includes a buried oxide layer disposed on a substrate, a first region disposed on the buried oxide layer and a first ring region disposed in the first region. The first ring region includes a portion of a guardring. The device further includes a first terminal region disposed in the first ring region, a second ring region disposed in the first region and a second terminal region disposed in the second ring region. The first terminal region is connected to an anode and the second terminal region is connected to a cathode. The first region has a graded doping concentration. The first region, the second ring region and the second terminal region have a first conductivity type, and the first ring region and the first terminal region have a second conductivity type. The first conductivity type is different from the second conductivity type.
    Type: Grant
    Filed: December 13, 2021
    Date of Patent: January 2, 2024
    Assignee: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Kwangsik Ko, Qiuyi Xu, Shajan Mathew
  • DEVICE FOR HIGH VOLTAGE APPLICATIONS
    Publication number: 20230187487
    Abstract: A device includes a buried oxide layer disposed on a substrate, a first region disposed on the buried oxide layer and a first ring region disposed in the first region. The first ring region includes a portion of a guardring. The device further includes a first terminal region disposed in the first ring region, a second ring region disposed in the first region and a second terminal region disposed in the second ring region. The first terminal region is connected to an anode and the second terminal region is connected to a cathode. The first region has a graded doping concentration. The first region, the second ring region and the second terminal region have a first conductivity type, and the first ring region and the first terminal region have a second conductivity type. The first conductivity type is different from the second conductivity type.
    Type: Application
    Filed: December 13, 2021
    Publication date: June 15, 2023
    Inventors: Kwangsik KO, Qiuyi XU, Shajan MATHEW