Abstract: The present disclosure provides an example semiconductor devices and fabrication methods thereof, and memory systems. In one example, the semiconductor device includes: a first chip including a first type of transistor that is planar transistor and a second chip bound on the first chip in the first direction. The second chip includes a second type of transistor that is fin transistor. The semiconductor device and the fabrication method thereof, and the memory system provided in the present disclosure can mitigate the bulk effect between transistors in adjacent two chips. Other examples are disclosed.

Abstract: The present disclosure discloses a hundred-kilowatts-level monolithic fiber laser based on auxiliary lasers and hybrid cladding pumping scheme. Multi-wavelength auxiliary lasers and a signal laser are simultaneously coupled into a core of a gain fiber, and the gain fiber provides gains for the auxiliary lasers and the signal laser under multi-wavelength cladding pumping. The multi-wavelength auxiliary lasers and the signal laser are sequentially amplified under the action of gain competition, and the amplification of signal laser is suppressed at a front segment of the gain fiber, while the signal laser is effectively amplified at a rear segment of the gain fiber after the multi-wavelength auxiliary lasers are reabsorbed; quantum defects generated are reduced, and uniformly distributed thermal loads will be achieved, and the bearing capacity of laser power is improved, thereby further achieving inhibition on the transverse mode instability effect.

Abstract: An integrated circuit includes a first device having a first source or drain region, and a second device having a second source or drain region that is laterally adjacent to the first source or drain region. A conductive source or drain contact includes (i) a lower portion in contact with the first source or drain region, and extending above the first source or drain region, and (ii) an upper portion extending laterally from above the lower portion to above the second source or drain region. A dielectric material is between at least a section of the upper portion of the conductive source or drain contact and the second source or drain region. In an example, each of the first and second devices is a gate-all-around (GAA) device having one or more nanoribbons, nanowires, or nanosheets as channel regions, or is a finFet structure having a fin-based channel region.

Abstract: Disclosed are a drug-coated balloon and a method for preparing the same. The drug-coated balloon comprises a surface liquefied drug coating and a balloon, wherein the drug coating comprises a lipophilic excipient and a drug. The balloon can reduce the loss of the drug during delivery and increase efficiency in transferring the drug to a lesion site.

Abstract: The present invention discloses a hydrate energy-storage temperature-control material and a preparation method therefor. The material includes a refrigerant hydrate and a cross-linked polymer. The preparation method comprises the following steps: first, preparing a refrigerant hydrate by using a high-pressure reactor, and conducting grinding, crushing and sieving to obtain hydrate particles; then, uniformly spraying polytetrafluoroethylene suspended ultrafine powder onto the surface of the hydrate particles by using an electrostatic spraying device, and putting the hydrate particles into a plasma instrument to modify polytetrafluoroethylene so as to allow free radicals to be formed on the polytetrafluoroethylene powder surface; finally, subjecting monomers to graft polymerization with the free radicals on the polytetrafluoroethylene surface under the irradiation of a high-pressure mercury lamp of UV lighting system to stabilize the structure of the material, preparing a final product.

Abstract: A TBM adaptive surrounding rock classification method includes following steps: establishing a TBM adaptability surrounding rock classification table; substituting the rock uniaxial compressive strength and a rock mass intactness index into the surrounding rock classification table to obtain basic classification of a surrounding rock; determining whether the grade of the surrounding rock needs to be corrected or not, and when correction is not needed, enabling the basic classification of the surrounding rock to be the final grade of the surrounding rock; when the correction is needed, performing rock burst correction or groundwater correction on the grade of the surrounding rock; determining which corrected classification of a rock burst correction result and a groundwater correction result is poorer in surrounding rock evaluation; and obtaining a conclusion, and taking the corrected classification with poorer surrounding rock evaluation as the final grade of the surrounding rock.

Abstract: A rapid detection device for multi-channel sporadic transient partial discharge, comprising a CPU and several partial discharge detection circuits. The partial discharge detection circuits are connected to a plurality of ports of the CPU one to one, respectively. First, a partial discharge pulse signal is filtered and amplified by means of a partial discharge pulse signal processing module in the partial discharge detection circuits, and is then inputted to a comparator, and a reference voltage passes through the CPU and is sent to a reference voltage processing module for amplification, filtering and other processing, and then is inputted to the comparator, so that the comparator processes same according to the partial discharge pulse signal and the reference voltage and then inputs same to a trigger. Finally, according to a level signal at an output terminal of the trigger, the CPU determines whether partial discharge occurs in a circuit to be detected.

Abstract: An integrated circuit structure includes a device layer including an upper device above a lower device. The upper device includes an upper source or drain region, and an upper source or drain contact coupled to the upper source or drain region. The lower device includes a lower source or drain region. A first conductive feature is below the device layer, where the first conductive feature is coupled to the lower source or drain region. A second conductive feature vertically extends through the device layer. In an example, the second conductive feature is to couple (i) the first conductive feature below the device layer and (ii) an interconnect structure above the device layer. Thus, the first and second conductive features facilitate a connection between the interconnect structure on the frontside of the integrated circuit and the lower source or drain region towards the backside of the integrated circuit.

Abstract: An OLED display panel (100) and a display apparatus having same. The OLED display panel (100) includes a substrate (1), a pixel layer (2) and a separating and supporting layer (3). The pixel layer (2) includes a plurality of pixel-unit groups (21). The separating and supporting layer (3) includes a plurality of supporting-block groups (31). The thickness of the supporting blocks (311) is greater than the thickness of the third sub-pixels (211c). When the third sub-pixels (211c) are formed by evaporation by using a mask (101), the supporting blocks (311) are suitable to support between the substrate (1) and the mask (101), to isolate the substrate (1) and the mask (101). The supporting-block groups (31) are disposed on at least one side of the third sub-pixel (211c) of each of the pixel-unit groups (21) in the first direction.

Abstract: A display substrate includes a plurality of first subpixels, a plurality of second subpixels and a plurality of third subpixels. In a first direction, the first subpixels and the third subpixels are arranged alternately to form a plurality of first subpixel rows, the second subpixels are arranged to form a plurality of second subpixel rows, and the first subpixel rows and the second subpixel rows are arranged alternately in a second direction. Lines connecting centers of two first subpixels and two third subpixels in two adjacent rows and columns form a first virtual quadrilateral, the two first/third subpixels are arranged at two/the other two opposite vertices of the first virtual quadrilateral respectively, and a corresponding second subpixel is located within the first virtual quadrilateral. Lines connecting centers of two second subpixels, one first subpixel and one third subpixel in adjacent three rows and columns form a virtual parallelogram.

Abstract: A flexible display panel has a display area, a bonding area, and a bending area located between the display area and the bonding area. A flexible substrate includes a first surface and a second surface. Signal leads electrically connected to pixel driving circuits pass through the bending area from the display area and extend to the bonding area. In the pixel driving circuits, at least one pattern layer made of an inorganic material and located between the signal leads and the flexible substrate passes through the bending area from the display area and extends to the bonding area. A second organic material layer is disposed on a side of the signal leads away from the first surface and located at the bending area. A groove is disposed in a film layer away from the signal leads, and is located between the display area and the bonding area.

Abstract: The present invention discloses a hydrate energy-storage temperature-control material and a preparation method therefor. The material includes a refrigerant hydrate and a cross-linked polymer. The preparation method comprises the following steps: first, preparing a refrigerant hydrate by using a high-pressure reactor, and conducting grinding, crushing and sieving to obtain hydrate particles; then, uniformly spraying polytetrafluoroethylene suspended ultrafine powder onto the surface of the hydrate particles by using an electrostatic spraying device, and putting the hydrate particles into a plasma instrument to modify polytetrafluoroethylene so as to allow free radicals to be formed on the polytetrafluoroethylene powder surface; finally, subjecting monomers to graft polymerization with the free radicals on the polytetrafluoroethylene surface under the irradiation of a high-pressure mercury lamp of UV lighting system to stabilize the structure of the material, preparing a final product.

Abstract: The present invention discloses a multi-screen supporting device in a high-temperature adiabatic calorimeter, and belongs to a calorimeter device in calorimetry. The multi-screen supporting device comprises a vacuum tank, three layers of protecting screens, two layers of thermal insulation screens, a protecting screen supporter for supporting and fixing the protecting screens, a thermal insulation screen supporter for supporting and fixing the thermal insulation screens, and a connecting piece for connecting and fixing the protecting screen supporter and the thermal insulation screen supporter. The multi-screen supporting mode in the high-temperature calorimeter solves the problems of time consumption for disassembling and assembling, low multi-screen assembling coaxiality and reduced experimental repeatability caused by many parts moved in each disassembling and assembling in the existing high-temperature calorimeter.

Abstract: A method of treating or remediating contaminated material, such as water or soil, comprises contacting such material with asphaltenes. The asphaltenes are preferably produced as a by-product of petroleum refining and, in particular, a by-product of vacuum residua. An adsorbent material comprising such asphaltenes is also provided.

Abstract: The present disclosure provides a pixel array and a display device. The pixel array includes first sub-pixels, second sub-pixels and third sub-pixels; the first sub-pixels and the third sub-pixels are alternately arranged along a first direction to form first pixel groups, and are alternately arranged along a second direction to form third pixel groups; the second sub-pixels are arranged along the first direction to form second pixel groups, and are arranged along the second direction to form fourth pixel groups; wherein the first pixel groups and the second pixel groups are alternately arranged in the second direction; the third pixel groups and the fourth pixel groups are alternately arranged along the first direction; wherein a shape of the second sub-pixel includes a polygon, a plurality of sides of the polygon include straight lines or arcs, and the shape of the second sub-pixel includes at most one symmetry axis.

Abstract: A method of treating or remediating contaminated material, such as water or soil, comprises contacting such material with asphaltenes. The asphaltenes are preferably produced as a by-product of petroleum refining and, in particular, a by-product of vacuum residua. An adsorbent material comprising such asphaltenes is also provided.

Abstract: Integrated circuit structures having front side signal lines and backside power delivery are described. In an example, an integrated circuit structure includes a plurality of gate lines extending over a plurality of semiconductor nanowire stack or fin channel structures within a cell boundary. A plurality of trench contacts is extending over a plurality of source or drain structures within the cell boundary, individual ones of the plurality of trench contacts alternating with individual ones of the plurality of gate lines. A first signal line, a second signal line, a third signal line, and a fourth signal line are over the plurality of gate lines and the plurality of trench contacts within the cell boundary. A backside power delivery line is coupled to one of the plurality of trench contacts within the cell boundary.

Abstract: Multi version library cell handling and integrated circuit structures fabricated therefrom are described. In an example, an integrated circuit structure includes a plurality of gate lines parallel along a first direction of a substrate and having a pitch along a second direction orthogonal to the first direction. A first version of a cell type is over a first portion of the plurality of gate lines, the first version of the cell type including a first plurality of interconnect lines having a second pitch along the second direction, the second pitch less than the first pitch.

Abstract: Multi version library cell handling and integrated circuit structures fabricated therefrom are described. In an example, an integrated circuit structure includes a plurality of gate lines parallel along a first direction of a substrate and having a pitch along a second direction orthogonal to the first direction. A first version of a cell type is over a first portion of the plurality of gate lines, the first version of the cell type including a first plurality of interconnect lines having a second pitch along the second direction, the second pitch less than the first pitch.

Abstract: Systems, methods and computer program products for cannabis analysis, such as a system that has a cannabis analysis data server and a plurality of mobile cannabis analysis devices that are communicatively coupled to a network. The mobile devices perform physical analyses of a physical sample and communicate resulting data to the cannabis analysis data server with a unique identifier. The mobile cannabis analysis devices may also monitor device and external environmental conditions that affect the performance and communicate these to the cannabis analysis data server. The cannabis analysis data server performs analyses on the received data from the mobile devices. Based on the sample analyses, the cannabis analysis data server generates sample analysis reports and communicates them to a user. The cannabis analysis data server may also generate data to control the operation of the mobile cannabis analysis devices based on the operation and environmental data received from the devices.