Patents by Inventor Quang Le
Quang Le has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11783853Abstract: The present disclosure generally relates to a bismuth antimony (BiSb) based STO (spin torque oscillator) sensor. The STO sensor comprises a SOT device and a magnetic tunnel junction (MTJ) structure. By utilizing a BiSb layer within the SOT device, a larger spin Hall angle (SHA) can be achieved, thereby improving the efficiency and reliability of the STO sensor.Type: GrantFiled: May 31, 2022Date of Patent: October 10, 2023Assignee: Western Digital Technologies, Inc.Inventors: Xiaoyong Liu, Zhanjie Li, Quang Le, Brian R. York, Cherngye Hwang, Kuok San Ho, Hisashi Takano
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SYNAPTIC ARRAY FOR FIELD-TRAINING-CAPABLE IN-MEMORY COMPUTING USING NON-VOLATILE MEMORY TECHNOLOGIES
Publication number: 20230317163Abstract: An apparatus and system are described to provide an in-memory computing non-volatile flash memory cell array used in a neural network. Each cell includes a Resistive RAM memory (RRAM) and a physical resistor formed from a high resistive material. The RRAM is programmed to either an on or off state in which the resistance is respectively significantly less or more than the resistor to permit the RRAM to act as a switch and allow for in-situ training. Multi-bit RRAM cells contain multiple RRAMs, each of which is connected to a resistor having a different resistance and read using the same input line. The resistors are formed from the same material as the resistor in the analog-to-digital converter used to read the array.Type: ApplicationFiled: March 23, 2023Publication date: October 5, 2023Inventor: Binh Quang Le -
Patent number: 11776565Abstract: The present disclosure generally relates to a tape head of a tape drive, and methods of forming thereof. In one embodiment, a tape head for magnetic storage devices comprises a trailing shield, a leading shield, a first write pole coupled to the trailing shield, a second write pole coupled to the leading shield, and side shields spaced from the first write pole and the second write pole by a thin insulation layer. The side shields are further disposed between the trailing shield and the leading shield. In another embodiment, a tape head for magnetic storage devices comprises a main pole disposed between a trailing shield and a leading shield and a side shield disposed adjacent to the main pole. The side shield is further disposed between the trailing shield and the leading shield and spaced from the main pole by a thin insulation layer.Type: GrantFiled: January 12, 2022Date of Patent: October 3, 2023Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Hongquan Jiang, Cherngye Hwang, David J. Seagle, Xiaoyong Liu
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Patent number: 11776567Abstract: The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device comprising a first seed layer, a first spin hall effect (SHE) layer, a first interlayer, a first free layer, a gap layer, a second seed layer, a second SHE layer, a second free layer, and a second interlayer. The gap layer is disposed between the first SHE layer and the second SHE layer. The materials and dimensions used for the first and second seed layers, the first and second interlayers, and the first and second SHE layers affect the resulting spin hall voltage converted from spin current injected from the first free layer and the second free layer, as well as the ability to tune the first and second SHE layers. Moreover, the SOT differential reader improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).Type: GrantFiled: August 5, 2021Date of Patent: October 3, 2023Assignee: Western Digital Technologies, Inc.Inventors: Cherngye Hwang, Xiaoyong Liu, Quang Le, Kuok San Ho, Hisashi Takano, Brian R. York
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Publication number: 20230306993Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices. The SOT devices each comprise a non-magnetic layer, a free layer disposed in contact with the non-magnetic layer, and a bismuth antimony (BiSb) layer disposed over the free layer. The non-magnetic layer has a thickness of about 0.5 nm to about 2 nm. The BiSb layer has a thickness of about 5 nm to about 10 nm. The BiSb layer and the free layer have collective thickness between about 5 nm to about 20 nm. By reducing the thickness of the non-magnetic layer and BiSb layer, a read gap of each SOT device is reduced while enabling large inverse spin Hall angles and high signal-to-noise ratios.Type: ApplicationFiled: March 25, 2022Publication date: September 28, 2023Inventors: Quang LE, Brian R. YORK, Xiaoyong LIU, Son T. LE, Cherngye HWANG, Michael A. GRIBELYUK, Xiaoyu XU, Kuok San HO, Hisashi TAKANO, Julian SASAKI, Huy H. HO, Khang H. D. NGUYEN, Nam Hai PHAM
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Patent number: 11763973Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.Type: GrantFiled: August 13, 2021Date of Patent: September 19, 2023Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Brian R. York, Cherngye Hwang, Susumu Okamura, Michael Gribelyuk, Xiaoyong Liu, Kuok San Ho, Hisashi Takano
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Patent number: 11742208Abstract: A microelectronic device with a trench structure is formed by forming a trench in a substrate, forming a seed layer in the trench, the seed layer including an amorphous dielectric material; and forming semi-amorphous polysilicon on the amorphous dielectric material. The semi-amorphous polysilicon has amorphous silicon regions separated by polycrystalline silicon. Subsequent thermal processes used in fabrication of the microelectronic device may convert the semi-amorphous polysilicon in the trench to a polysilicon core. In one aspect, the seed layer may be formed on sidewalls of the trench, contacting the substrate. In another aspect, a polysilicon outer layer may be formed in the trench before forming the seed layer, and the seed layer may be formed on the polysilicon layer.Type: GrantFiled: March 25, 2020Date of Patent: August 29, 2023Assignee: Texas Instruments IncorporatedInventors: Damien Thomas Gilmore, Jonathan P. Davis, Azghar H Khazi-Syed, Shariq Arshad, Khanh Quang Le, Kaneez Eshaher Banu, Jonathan Roy Garrett, Sarah Elizabeth Bradshaw, Eugene Clayton Davis
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Patent number: 11735211Abstract: The present disclosure relates to read head apparatus, and methods of forming read head apparatus, for magnetic storage devices, such as magnetic tape drives (e.g., tape drives). In one implementation, a read head for magnetic storage devices includes a lower shield, one or more upper shields, one or more lower leads, and a plurality of upper leads. The read head includes a plurality of read sensors, each read sensor of the plurality of read sensors including a first antiferromagnetic (AFM) layer. The read head includes a plurality of soft bias side shields disposed between and outwardly of the plurality of read sensors. The read head includes one or more second AFM layers disposed above the first AFM layer and the plurality of soft bias side shields along a downtrack direction.Type: GrantFiled: July 18, 2022Date of Patent: August 22, 2023Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Hongquan Jiang, Cherngye Hwang, Hisashi Takano
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Publication number: 20230223043Abstract: The present disclosure generally relates to a tape head of a tape drive, and methods of forming thereof. In one embodiment, a tape head for magnetic storage devices comprises a trailing shield, a leading shield, a first write pole coupled to the trailing shield, a second write pole coupled to the leading shield, and side shields spaced from the first write pole and the second write pole by a thin insulation layer. The side shields are further disposed between the trailing shield and the leading shield. In another embodiment, a tape head for magnetic storage devices comprises a main pole disposed between a trailing shield and a leading shield and a side shield disposed adjacent to the main pole. The side shield is further disposed between the trailing shield and the leading shield and spaced from the main pole by a thin insulation layer.Type: ApplicationFiled: January 12, 2022Publication date: July 13, 2023Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Hongquan JIANG, Cherngye HWANG, David J. SEAGLE, Xiaoyong LIU
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Patent number: 11694713Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a buffer layer formed over the substrate, and a bismuth antimony (BiSb) layer formed over the buffer layer, the BiSb layer having a (012) orientation. In certain embodiments, the SOT MTJ device is part of a microwave assisted magnetic recording (MAMR) write head. In certain embodiments, the SOT MTJ device is part of a magnetoresistive random access memory (MRAM) device.Type: GrantFiled: November 20, 2020Date of Patent: July 4, 2023Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Cherngye Hwang, Brian R. York, Thao A. Nguyen, Zheng Gao, Kuok San Ho, Pham Nam Hai
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Publication number: 20230197132Abstract: The present disclosure generally relates to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a doped bismuth antimony (BiSbE) layer having a (012) orientation. The devices may include magnetic write heads, read heads, or MRAM devices. The dopant in the BiSbE layer enhances the (012) orientation. The BiSbE layer may be formed on a texturing layer to ensure the (012) orientation, and a migration barrier may be formed over the BiSbE layer to ensure the antimony does not migrate through the structure and contaminate other layers. A buffer layer and interlayer may also be present. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the doped BiSbE layer and enhance uniformity of the doped BiSbE layer while further promoting the (012) orientation of the doped BiSbE layer.Type: ApplicationFiled: June 30, 2022Publication date: June 22, 2023Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Cherngye HWANG, Brian R. YORK, Randy G. SIMMONS, Xiaoyong LIU, Kuok San HO, Hisashi TAKANO, Michael A. GRIBELYUK, Xiaoyu XU
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Patent number: 11682418Abstract: The present disclosure generally relates to data storage devices, and more specifically, to a magnetic media drive employing a magnetic recording head. The head includes a main pole at a media facing surface (MFS), a trailing shield at the MFS, and a heavy metal layer disposed between the main pole and the trailing shield at the MFS. Spin-orbit torque (SOT) is generated from the heavy metal layer and transferred to a surface of the main pole as a current passes through the heavy metal layer in a cross-track direction. The SOT executes a torque on the surface magnetization of the main pole, which reduces the magnetic flux shunting from the main pole to the trailing shield. With the reduced magnetic flux shunting from the main pole to the trailing shield, write-ability is improved.Type: GrantFiled: July 19, 2022Date of Patent: June 20, 2023Assignee: Western Digital Technologies, Inc.Inventors: Suping Song, Zhanjie Li, Michael Kuok San Ho, Quang Le, Alexander M. Zeltser
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Publication number: 20230186946Abstract: The present disclosure is generally related to a tape drive including a tape head configured to read shingled data on a tape. The tape head comprises a first module head assembly aligned with a second module head assembly. Both the first and second module head assemblies comprises a plurality of data heads. Each data head comprises a write head, a first read head aligned with the write head, a second read head offset from the first read head in both a cross-track direction and a down-track direction, and a third read head offset from the first and/or second read heads in the cross-track and down-track directions. By utilizing three read heads within each data head, data can be read from a tape that has experienced tape dimensional stability, as at least one read head will be near a center of each data track of the tape.Type: ApplicationFiled: December 15, 2021Publication date: June 15, 2023Inventors: Quang LE, Xiaoyong LIU, Hongquan JIANG, Cherngye HWANG, Kuok San HO, Hisashi TAKANO
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Patent number: 11670329Abstract: The present disclosure is generally related to a tape drive including a tape head configured to read shingled data on a tape. The tape head comprises a first module head assembly aligned with a second module head assembly. Both the first and second module head assemblies comprises a plurality of data heads. Each data head comprises a write head, a first read head aligned with the write head, a second read head offset from the first read head in both a cross-track direction and a down-track direction, and a third read head offset from the first and/or second read heads in the cross-track and down-track directions. By utilizing three read heads within each data head, data can be read from a tape that has experienced tape dimensional stability, as at least one read head will be near a center of each data track of the tape.Type: GrantFiled: December 15, 2021Date of Patent: June 6, 2023Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Xiaoyong Liu, Hongquan Jiang, Cherngye Hwang, Kuok San Ho, Hisashi Takano
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Patent number: 11646054Abstract: The present disclosure generally relates to a tape drive including a tape head. The tape head comprises at least one same gap verify (SGV) module comprising a plurality of write transducer and read transducer pairs disposed on a substrate. Each pair comprises a null shield disposed between the write transducer and the read transducer. The null shield is used to create a null region, or a region where write flux goes to zero, and comprises laminated antiferromagnetic coupling materials to protect writer flux from going to the read transducer. The read transducer is disposed in the null region. The SGV module is configured to write data to a tape using the write transducer of each pair and read verify the data written on the tape using the read transducer of each pair such that the write transducer and read transducer of each pair are concurrently operable.Type: GrantFiled: August 6, 2021Date of Patent: May 9, 2023Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Xiaoyong Liu, Kuok San Ho, Hisashi Takano
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Patent number: 11641520Abstract: Computing devices, such as mobile computing devices, have access to one or more image sensors that can capture images with multiple subjects. Some of these subjects may be known to the user capturing an image with the image sensor. The user may prefer to have the captured image data be optimized around the known subjects. Low-power, fast-response machine learning logic can be configured to allow for the generation of a plurality of inference data. This inference data can be utilized along with other sensor data, such as a motion sensor, for the generation of one or more image sensor configuration changes that may be implemented to optimize the subsequent capture of image data. This cycle of image data analysis, image sensor optimization, and subsequent capture can continue multiple times until a threshold of optimization or time is met. The captured image data optimized around the known subjects is then stored.Type: GrantFiled: June 24, 2022Date of Patent: May 2, 2023Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Rajeev Nagabhirava, Kuok San Ho, Daniel Bai, Xiaoyong Liu
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Publication number: 20230121375Abstract: The present disclosure generally relate to spin-orbit torque (SOT) devices comprising a topological insulator (TI) modulation layer. The TI modulation layer comprises a plurality of bismuth or bismuth-rich composition modulation layers, a plurality of TI lamellae layers comprising BiSb having a (012) crystal orientation, and a plurality of texturing layers. The TI lamellae layers comprise dopants or clusters of atoms, the clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material. The clusters of atoms are configured to have a grain boundary glass forming temperature of less than about 400° C. Doping the TI lamellae layers comprising BiSb having a (012) crystal orientation with clusters of atoms comprising a carbide, a nitride, an oxide, or a composite ceramic material enable the SOT MTJ device to operate at higher temperatures while inhibiting migration of Sb from the BiSb of the TI lamellae layers.Type: ApplicationFiled: December 16, 2022Publication date: April 20, 2023Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Brian R. YORK, Cherngye HWANG, Susumu OKAMURA, Xiaoyong LIU, Kuok San HO, Hisashi TAKANO
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Patent number: 11615809Abstract: The present disclosure generally relates to spin-orbital torque (SOT) differential reader designs. The SOT differential reader is a multi-terminal device that comprises a first shield, a first spin hall effect layer, a first free layer, a gap layer, a second spin hall effect layer, a second free layer, and a second shield. The gap layer is disposed between the first spin hall effect layer and the second spin hall effect layer. Electrical lead connections are located about the first spin hall effect layer, the second spin hall effect layer, the gap layer, the first shield, and/or the second shield. The electrical lead connections facilitate the flow of current and/or voltage from a negative lead to a positive lead. The positioning of the electrical lead connections and the positioning of the SOT differential layers improves reader resolution without decreasing the shield-to-shield spacing (i.e., read-gap).Type: GrantFiled: August 5, 2021Date of Patent: March 28, 2023Assignee: Western Digital Technologies, Inc.Inventors: Quang Le, Xiaoyong Liu, Zhigang Bai, Zhanjie Li, Kuok San Ho, Hisashi Takano
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Publication number: 20230047223Abstract: The present disclosure generally relate to spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices comprising a buffer layer, a bismuth antimony (BiSb) layer having a (012) orientation disposed on the buffer layer, and an interlayer disposed on the BiSb layer. The buffer layer and the interlayer may each independently be a single layer of material or a multilayer of material. The buffer layer and the interlayer each comprise at least one of a covalently bonded amorphous material, a tetragonal (001) material, a tetragonal (110) material, a body-centered cubic (bcc) (100) material, a face-centered cubic (fcc) (100) material, a textured bcc (100) material, a textured fcc (100) material, a textured (100) material, or an amorphous metallic material. The buffer layer and the interlayer inhibit antimony (Sb) migration within the BiSb layer and enhance uniformity of the BiSb layer while further promoting the (012) orientation of the BiSb layer.Type: ApplicationFiled: August 13, 2021Publication date: February 16, 2023Inventors: Quang LE, Brian R. YORK, Cherngye HWANG, Susumu OKAMURA, Michael GRIBELYUK, Xiaoyong LIU, Kuok San HO, Hisashi TAKANO
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Publication number: 20230040698Abstract: The present disclosure generally relates to a tape drive including a tape head. The tape head comprises at least one same gap verify (SGV) module comprising a plurality of write transducer and read transducer pairs disposed on a substrate. Each pair comprises a null shield disposed between the write transducer and the read transducer. The null shield is used to create a null region, or a region where write flux goes to zero, and comprises laminated antiferromagnetic coupling materials to protect writer flux from going to the read transducer. The read transducer is disposed in the null region. The SGV module is configured to write data to a tape using the write transducer of each pair and read verify the data written on the tape using the read transducer of each pair such that the write transducer and read transducer of each pair are concurrently operable.Type: ApplicationFiled: August 6, 2021Publication date: February 9, 2023Applicant: Western Digital Technologies, Inc.Inventors: Quang LE, Xiaoyong LIU, Kuok San HO, Hisashi TAKANO