Abstract: An object of the present invention is to provide a GaN crystal long in light emission lifetime by time-resolved photoluminescence measurement and provide high-quality GaN crystal and GaN substrate that have few specified crystal defects affecting the light emission lifetime. A gallium nitride crystal having a light emission lifetime by time-resolved photoluminescence measurement, of 5 ps or more and 200 ps or less, and satisfying at least one of the following requirement (i) and requirement (ii): (i) an FWHM in a 004 diffraction X-ray rocking curve is 50 arcsec or less at least one position of the crystal; and (ii) a dislocation density is 5×106 cm?2 or less.

Abstract: A pressure container for crystal production having excellent corrosion-resistance is provided. This pressure container produces crystals within the container using a seed crystal, a mineralizer, a raw material, and ammonia in a supercritical state or a subcritical state as a solvent. The pressure container has Ag present over the entire surface of at least the inner surface thereof in contact with the solvent. The Ag can be disposed by one or a combination of two or more among, for instance, Ag lining, Ag welding, and Ag plating. The mineralizer is preferably a fluorine mineralizer containing no halogen atoms other than fluorine.

Abstract: The present invention relates to a pressure container for crystal production having excellent corrosion-resistance. This pressure container produces crystals within the container using a seed crystal, a mineralizer, a raw material, and ammonia in a super critical state and/or a sub-critical state as a solvent. The pressure container has Ag present over the entire surface of at least the exposed inner surface thereof. The Ag can be disposed by one or a combination of two or more among, for instance, Ag lining, Ag welding, and Ag plating. The mineralizer is preferably a fluorine mineralizer containing no halogen atoms other than fluorine.

Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.

Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.