Patents by Inventor R. Michael Guidash
R. Michael Guidash has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8158453Abstract: A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.Type: GrantFiled: February 3, 2010Date of Patent: April 17, 2012Assignees: International Business Machines Corporation, Omnivision Technologies, Inc.Inventors: James W. Adkisson, John J. Ellis-Monaghan, R. Michael Guidash, Mark D. Jaffe, Edward T. Nelson, Richard J. Rassel, Charles V. Stancampiano
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Patent number: 7969469Abstract: A primary integrated image sensor is operatively connected to one or more secondary image sensors. The primary integrated image sensor includes a pixel array integrated on a semiconductor substrate along with one or more of an image signal processing circuit, readout circuitry, a digital serial interface, storage, a timing circuit, an analog-to-digital converter, and a bi-directional digital input/output circuit. Each secondary image sensor can be implemented as a Complementary Metal Oxide Semiconductor (CMOS) or a Charge Coupled Device (CCD) image sensor and include a pixel array along with one or more of a readout circuitry, a digital serial interface, a timing circuit, an output circuit, and an optional analog-to-digital converter. Images captured by the primary integrated image sensor and each secondary image sensor are processed by the primary image sensor. Each secondary image sensor can also transmit physical and operational data to the primary integrated image sensor.Type: GrantFiled: November 30, 2007Date of Patent: June 28, 2011Assignee: OmniVision Technologies, Inc.Inventor: R. Michael Guidash
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Publication number: 20100136733Abstract: A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.Type: ApplicationFiled: February 3, 2010Publication date: June 3, 2010Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, EASTMAN KODAK COMPANYInventors: James W. Adkisson, John J. Ellis-Monaghan, R. Michael Guidash, Mark D. Jaffe, Edward T. Nelson, Richard J. Rassel, Charles V. Stancampiano
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Patent number: 7705900Abstract: An image sensor includes a plurality of pixels, at least two pixels each having a photodetector; a charge-to-voltage conversion region; an input to an amplifier; and a switch for selectively connecting the charge-to-voltage conversion regions.Type: GrantFiled: April 21, 2006Date of Patent: April 27, 2010Assignee: Eastman Kodak CompanyInventor: R. Michael Guidash
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Patent number: 7674648Abstract: A method for reading out an image sensor, the method includes the steps of integrating charge in a photodetector with the photodetector at a first capacitance; reading the resulting signal level at a first time with the photodetector at the first capacitance; changing the photodetector capacitance to a second capacitance; and reading the signal level associated with the photodetector at the second capacitance.Type: GrantFiled: March 21, 2007Date of Patent: March 9, 2010Assignee: Eastman Kodak CompanyInventors: John T. Compton, R. Michael Guidash
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Patent number: 7675097Abstract: A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.Type: GrantFiled: December 1, 2006Date of Patent: March 9, 2010Assignees: International Business Machines Corporation, Eastman Kodak CompanyInventors: James W. Adkisson, John J. Ellis-Monaghan, R. Michael Guidash, Mark D. Jaffe, Edward T. Nelson, Richard J. Rassel, Charles V. Stancampiano
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Publication number: 20090141146Abstract: A primary integrated image sensor is operatively connected to one or more secondary image sensors. The primary integrated image sensor includes a pixel array integrated on a semiconductor substrate along with one or more of an image signal processing circuit, readout circuitry, a digital serial interface, storage, a timing circuit, an analog-to-digital converter, and a bi-directional digital input/output circuit. Each secondary image sensor can be implemented as a Complementary Metal Oxide Semiconductor (CMOS) or a Charge Coupled Device (CCD) image sensor and include a pixel array along with one or more of a readout circuitry, a digital serial interface, a timing circuit, an output circuit, and an optional analog-to-digital converter. Images captured by the primary integrated image sensor and each secondary image sensor are processed by the primary image sensor. Each secondary image sensor can also transmit physical and operational data to the primary integrated image sensor.Type: ApplicationFiled: November 30, 2007Publication date: June 4, 2009Inventor: R. Michael Guidash
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Publication number: 20080231727Abstract: A method for reading out an image sensor, the method includes the steps of integrating charge in a photodetector with the photodetector at a first capacitance; reading the resulting signal level at a first time with the photodetector at the first capacitance; changing the photodetector capacitance to a second capacitance; and reading the signal level associated with the photodetector at the second capacitance.Type: ApplicationFiled: March 21, 2007Publication date: September 25, 2008Inventors: John T. Compton, R. Michael Guidash
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Publication number: 20080128767Abstract: A CMOS active pixel sensor (APS) cell structure having dual workfunction transfer gate device and method of fabrication. The transfer gate device comprises a dielectric layer formed on a substrate and a dual workfunction gate conductor layer formed on the dielectric layer comprising a first conductivity type doped region and an abutting second conductivity type doped region. The transfer gate device defines a channel region where charge accumulated by a photosensing device is transferred to a diffusion region. A silicide structure is formed atop the dual workfunction gate conductor layer for electrically coupling the first and second conductivity type doped regions. In one embodiment, the silicide contact is smaller in area dimension than an area dimension of said dual workfunction gate conductor layer. Presence of the silicide strap prevents the diodic behavior from allowing one or the other side of the gate to float to an indeterminate voltage.Type: ApplicationFiled: December 1, 2006Publication date: June 5, 2008Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, EASTMAN KODAK COMPANYInventors: James W. Adkisson, John J. Ellis-Monaghan, R. Michael Guidash, Mark D. Jaffe, Edward T. Nelson, Richard J. Rassel, Charles V. Stancampiano
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Patent number: 7361877Abstract: An image sensor includes a two-dimensional array of pixels having a photodetector for collecting charge in response to incident light; a storage region adjacent the photodetector that receives the charge from the photodetector; a sense node adjacent the storage region that receives the charge from the storage region and converts the charge to a voltage signal; and an input to an amplifier for sensing the voltage signal from the sense node.Type: GrantFiled: March 30, 2006Date of Patent: April 22, 2008Assignee: Eastman Kodak CompanyInventors: R. Daniel McGrath, R. Michael Guidash
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Patent number: 7342213Abstract: An image sensor includes a plurality of photodetectors arranged in an array; and a plurality of transistors that are functionally shared by the photodetectors, wherein a distance of each photodetector to an adjacent transistor is substantially the same.Type: GrantFiled: May 11, 2006Date of Patent: March 11, 2008Assignee: Eastman Kodak CompanyInventors: R. Michael Guidash, Timothy J. Kenney
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Patent number: 7238926Abstract: A method of making an image sensor, the method includes the steps of providing a plurality of pixels each with a photodetector; providing an amplifier that is shared between the plurality of photodetectors; providing a transfer gate associated with each photodetector; providing a charge-to-voltage conversion region that is shared between the plurality of photodetectors; determining a capacitance between each transfer gate and the charge-to-voltage conversion region; and modifying the capacitance to be substantially the same by altering a physical structure within one or more pixels.Type: GrantFiled: April 5, 2006Date of Patent: July 3, 2007Assignee: Eastman Kodak CompanyInventors: R. Michael Guidash, Ravi Mruthyunjaya, Weize Xu