Abstract: A method of increasing a read margin in a memory cell may include sensing an input current created from the application of a read voltage across a memristive device, squaring the input current, and comparing the squared input current to a reference current. A memristive device may include a memristor and a sense amplifier communicatively coupled to the memristor wherein a sensed input current created from the application of a reference voltage across a memristor is squared and wherein the sense amplifier compares the squared input current to a reference current.

Abstract: A memristive routing device (200) includes a memristive matrix (240), mobile dopants (255) moving with the memristive matrix (240) in response to programming electrical fields and remaining stable within the memristive matrix (240) in the absence of the programming electrical fields; and at least three electrodes (210, 220, 230) surrounding the memristive matrix (240). A method for tuning electrical circuits with a memristive device (900) includes measuring a circuit characteristic (805) and applying a programming voltage to the memristive device (900) which causes motion of dopants within the memristive device (900) to alter the circuit characteristic (805).