Abstract: Tubular silicon members advantageously formed by extrusion from a silicon melt or by fixing together silicon staves in a barrel shape. A silicon-based wafer support tower is particularly useful for batch-mode thermal chemical vapor deposition and other high-temperature processes, especially reflow of silicate glass at above 1200° C. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. The tower parts are preferably pre-coated with silicon nitride or polysilicon prior to chemical vapor deposition of these materials, or with silicon nitride prior to reflow of silica.

Abstract: A method of joining two silicon members, the adhesive used for the method, and the joined product, especially a silicon tower for supporting multiple silicon wafers. A flowable adhesive is prepared comprising silicon particles of size less than 100 ?m and preferably less than 100 nm and a silica bridging agent, such as a spin-on glass. Nano-silicon crystallites of about 20 nm size may be formed by CVD. Larger particles may be milled from virgin polysilicon. If necessary, a retardant such as a heavy, preferably water-insoluble alcohol such as terpineol is added to slow setting of the adhesive at room temperature. The mixture is applied to the joining areas. The silicon parts are assembled and annealed at a temperature sufficient to link the silica, preferably at 900° C. to 1100° C. for nano-silicon but higher for milled silicon.

Abstract: A gas injector tube usable in a batch thermal treatment oven including two silicon shells joined together with an adhesive formed of a fine silicon powder and a curable silica-forming agent, such as a spin-on glass, which is ultrasonically homogenized. The tube may have a gas outlet on its distal end or be sealed with a silicon cap and have side outlet holes formed along its side. The silicon injector tube may be used in combination with a silicon tower and a silicon liner so that all bulk parts within the furnace hot zone are formed of silicon.

Abstract: A method of joining two silicon members, the adhesive used for the method, and the joined product, especially a silicon tower for supporting multiple silicon wafers. A flowable adhesive is prepared comprising silicon particles of size less than 100 ?m and preferably less than 100 nm and a silica bridging agent, such as a spin-on glass. Nano-silicon crystallites of about 20 nm size may be formed by CVD. Larger particles may be milled from virgin polysilicon. If necessary, a retardant such as a heavy, preferably water-insoluble alcohol such as terpineol is added to slow setting of the adhesive at room temperature. The mixture is applied to the joining areas. The silicon parts are assembled and annealed at a temperature sufficient to link the silica, preferably at 900° C. to 1100° C. for nano-silicon but higher for milled silicon.

Abstract: A method of joining two silicon members, the adhesive used for the method, and the joined product, especially a silicon tower for supporting multiple silicon wafers. A flowable adhesive is prepared comprising silicon particles of size less than 100 &mgr;m and preferably less than 100 nm and a silica bridging agent, such as a spin-on glass. Nano-silicon crystallites of about 20 nm size may be formed by CVD. Larger particles may be milled from virgin polysilicon. If necessary, a retardant such as a heavy, preferably water-insoluble alcohol such as terpineol is added to slow setting of the adhesive at room temperature. The mixture is applied to the joining areas. The silicon parts are assembled and annealed at a temperature sufficient to link the silica, preferably at 900° C. to 1100° C. for nano-silicon but higher for milled silicon.

Abstract: Tubular silicon members advantageously formed by extrusion from a silicon melt or by fixing together silicon staves in a barrel shape. A silicon-based wafer support tower is particularly useful for batch-mode thermal chemical vapor deposition and other high-temperature processes, especially reflow of silicate glass at above 1200° C. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. The tower parts are preferably pre-coated with silicon nitride or polysilicon prior to chemical vapor deposition of these materials, or with silicon nitride prior to reflow of silica.

Abstract: A silicon wafer process fixture having various silicon members secured together. The fixture may include a plurality of generally elongate silicon support member secured to a generally planar silicon base. The silicon members may be made of monocrystalline silicon, polycrystalline silicon, or virgin polysilicon.

Abstract: A silicon-based wafer support tower particularly useful for batch-mode thermal chemical vapor deposition and other high-temperature processes, especially reflow of silicate glass at above 1200° C. The surfaces of the silicon tower are bead blasted to introduce sub-surface damage, which produces pits and cracks in the surface, which anchor subsequently deposited layer of, for example, silicon nitride, thereby inhibiting peeling of the nitride film. Wafer support portions of the tower are preferably composed of virgin polysilicon. The invention can be applied to other silicon parts in a deposition or other substrate processing reactor, such as tubular sleeves and reactor walls. Tubular silicon members are advantageously formed by extrusion from a silicon melt or by fixing together silicon staves in a barrel shape. The tower parts are preferably pre-coated with silicon nitride or polysilicon prior to chemical vapor deposition of these materials, or with silicon nitride prior to reflow of silica.

Abstract: A method of fabricating support members for wafer processing fixtures and the produce are disclosed. In the first step of the method, an elongate support member basic form is provided. The basic form has a substantially wedge-shaped cross-section and angular comers. A plurality of wafer-retaining slots are cut along one side of the support member basic form. The support member basic form can include a front surface and a rear surface, with at least one angular comer occurring on each of the surfaces. The comers have a larger radius on the rear than in the front. Attachment structures on terminal ends can be fixed to bases. The elongate support member basic form can be fabricated from an inert crystalline material, such as polycrystalline silicon or monocrystalline silicon.

Abstract: A method of fabricating support members for wafer processing fixtures and the produce are disclosed. In the first step of the method, an elongate support member basic form is provided. The basic form has a substantially wedge-shaped cross-section and angular corners. A plurality of wafer-retaining slots are cut along one side of the support member basic form. The support member basic form can include a front surface and a rear surface, with at least one angular corner occurring on each of the surfaces. The corners have a larger radius on the rear than in the front. Attachment structures on terminal ends can be fixed to bases. The elongate support member basic form can be fabricated from an inert crystalline material, such as polycrystalline silicon or monocrystalline silicon.

Abstract: A silicon wafer process fixture having various silicon members secured together. The fixture may include a plurality of generally elongate silicon support member secured to a generally planar silicon base. The silicon members may be composed of monocrystalline silicon, polycrystalline silicon, or virgin polysilicon.

Abstract: A silicon wafer processing fixture is made by providing a first silicon member with an outwardly extending attachment element. A second silicon member is provided with an attachment element receiving portion receives the extending attachment element of the first member which are then fixedly secured. The step of fixedly securing the members together can be accomplished by providing a first transverse bore in the attachment element and a second transverse bore in the attachment element receiving portion. The two bores are aligned, and a locating pin is used to secure the elements together. Alternatively, laser energy can be applied or adhesive to fixedly secure the elements together.

Abstract: A method for fabricating elongate structural members from a unitary blank of crystalline material is provided. The blank has a predetermined length, width, and depth. A first substantially planar cut is made in the blank, the cut extending substantially along the entire length of the blank and substantially less than the entire width of the blank. At east one additional cut is made in the blank, the at least one additional cut extending in the same plane as the first cut, to cut the blank into two pieces. The step of making at least one additional cut can include making a plurality of additional cuts, in one embodiment at least three additional cuts. The cuts can be made using a rotary saw with a blade having diamond-coated cutting surfaces. The saw can be operated with the blade rotating at between 50 rpm and 50,000 rpm, preferably at approximately 4,000 rpm. The blank of crystalline material can be provided as a unitary blank of silicon material.

Abstract: A method of fabricating support members for wafer processing fixtures is disclosed. In the first step of the method, an elongate support member basic form is provided. The basic form has a substantially wedge-shaped cross-section and angular edges. Next, the edges of the support member basic form are machined to replace the angular edges with substantially arcuate edges. A plurality of wafer-retaining slots are cut along one side of the support member basic form. The support member basic form can include a front surface and a rear surface, with at least one angular edge occurring on each of the surfaces. The step of machining the edges of the support member basic form can be performed as machining the edges on the respective surfaces to radii of between 0.25″ and 5.25″. In an embodiment, the at least one angular edge occurring on the rear surface can be machined to a radius of approximately 1.