Abstract: Electrochemical devices including solid oxide fuel cells (SOFCs) or thin film solid oxide fuel cells (TFSOFCs) having a porous metallic anode with nanoporous surface structure enabling the deposition of a dense, impermeable thin film electrolyte layer on the porous anode. Fabricating methods include forming a mixture of nanopowder metallic agents and nanopowder proppant that are sintered, smoothed and etched to form the nanoporous surface structure.

Abstract: Electrochemical devices including solid oxide fuel cells (SOFCs) or thin film solid oxide fuel cells (TFSOFCs) having a porous metallic anode with nanoporous surface structure enabling the deposition of a dense, impermeable thin film electrolyte layer on the porous anode. Fabricating methods include forming a mixture of nanopowder metallic agents and nanopowder proppant that are sintered, smoothed and etched to form the nanoporous surface structure.

Abstract: Electrochemical devices including solid oxide fuel cells (SOFCs) or thin film solid oxide fuel cells (TFSOFCs) having a porous metallic anode with nanoporous surface structure enabling the deposition of a dense, impermeable thin film electrolyte layer on the porous anode. Fabricating methods include forming a mixture of nanopowder metallic agents and nanopowder proppant that are sintered, smoothed and etched to form the nanoporous surface structure.

Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.

Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.

Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.

Abstract: An electric-pulse-induced-resistance change device (EPIR device) is provided which is a resistance switching device. It has a buffer layer inserted between a first active resistance switching layer and a second active resistance switching layer, with both active switching layers connected to electrode layers directly or through additional buffer layers between the active resistance switching layers and the electrodes. This device in its simplest form has the structure: electrode-active layer-buffer layer-active layer-electrode. The second active resistance switching layer may, in the alternative, be an ion donating layer, such that the structure becomes: electrode-active layer-buffer layer-ion donating layer-electrode. The EPIR device is constructed to mitigate the retention challenge.